2SA174 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Ordering number:EN3643PNP/NPN Epitaxial Planar Silicon Transistors2SA1749/2SC4564High-Definition CRT DisplayVideo Output ApplicationsFeatures Package Dimensions High fT : fT=400MHz (typ).unit:mm High breakdown voltage : VCEO 200V min.2042A High current.[2SA1749/2SC4564] Small reverse transfer capacitance and excellent highfrequnecy chacateristics :Cre=

DATA SHEETSILICON POWER TRANSISTOR2SA1742PNP SILICON EPITAXIAL TRANSISTORFOR HIGH-SPEED SWITCHINGThe 2SA1742 is a power transistor developed for high-speed ORDERING INFORMATIONswitching and features a high hFE at low VCE(sat). This transistor is idealPart No. Packagefor use as a driver in DC/DC converters and actuators.2SA1742 Isolated TO-220In addition, a small resin-molded

DATA SHEETSILICON POWER TRANSISTOR2SA1744PNP SILICON EPITAXIAL TRANSISTORFOR HIGH-SPEED SWITCHINGThe 2SA1744 is a power transistor developed for high-speed PACKAGE DRAWING (UNIT: mm)switching and features a high hFE at Low VCE(sat). This transistor isideal for use as a driver in DC/DC converters and actuators.In addition, a small resin-molded insulation type packagecontributes

DATA SHEETSILICON POWER TRANSISTOR2SA1741PNP SILICON EPITAXIAL TRANSISTORFOR HIGH-SPEED SWITCHINGThe 2SA1741 is a power transistor developed for high-speed PACKAGE DRAWING (UNIT: mm)switching and features a high hFE at low VCE(sat). This transistor isideal for use as a driver in DC/DC converters and actuators.In addition, a small resin-molded insulation type packagecontributes

DATA SHEETSILICON POWER TRANSISTOR2SA1743PNP SILICON EPITAXIAL TRANSISTORFOR HIGH-SPEED SWITCHINGThe 2SA1743 is a power transistor developed for high-speed PACKAGE DRAWING (UNIT: mm)switching and features a high hFE at low VCE(sat). This transistor isideal for use as a driver in DC/DC converters and actuators.In addition, a small resin-molded insulation type packagecontributes

Transistor2SA1748Silicon PNP epitaxial planer typeFor high-frequency amplificationUnit: mmComplementary to 2SC45622.1 0.10.425 1.25 0.1 0.425FeaturesHigh transition frequency fT. 1Small collector output capacitance Cob.S-Mini type package, allowing downsizing of the equipment and3automatic insertion through the tape packing and the magazine2packing.Absolute

Transistor2SA1748Silicon PNP epitaxial planer typeFor high-frequency amplificationUnit: mmComplementary to 2SC45622.1 0.10.425 1.25 0.1 0.425FeaturesHigh transition frequency fT. 1Small collector output capacitance Cob.S-Mini type package, allowing downsizing of the equipment and3automatic insertion through the tape packing and the magazine2packing.Absolute

UNISONIC TECHNOLOGIES CO., LTD 2SA1740 PNP SILICON TRANSISTOR HIGH VOLTAGE DRIVER APPLICATION FEATURES *High breakdown voltage. *Excellent hFE linearity. ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 2SA1740L-x-AB3-R 2SA1740G-x-AB3-R SOT-89 B C E Tape Reelwww.unisonic.com.tw 1 of 5 Copyright 2013 Unisonic Techno

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors SOT-89-3L 2SA1740 TRANSISTOR (PNP) 1. BASE FEATURES High breadown voltage 2. COLLECTOR Excellent hFE linearlity 3. EMITTER Marking: AK MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage -400 V VCEO Collector-Emitter

JMnic Product Specification Silicon PNP Power Transistors 2SA1741 DESCRIPTION With TO-220F package Low collector saturation voltage APPLICATIONS For use as a driver in DC/DC converters and actuators PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-220F) and symbol3 EmitterAbsolute maximum ratings (Ta=25) SYMBOL PARAMETER CONDITIONS VAL

JMnic Product Specification Silicon PNP Power Transistors 2SA1746 DESCRIPTION With TO-3PML package Low collector saturation voltage APPLICATIONS For chopper regulator,switch and general purpose applications PINNING PIN DESCRIPTION1 Emitter 2 CollectorFig.1 simplified outline (TO-3PML) and symbol 3 BaseAbsolute maximum ratings(Tc=25) SYMBOL PARAMETER COND

LOW VCE (sat) 2SA1746Silicon PNP Epitaxial Planar TransistorApplication : Chopper Regulator, Switch and General PurposeExternal Dimensions FM100(TO3PF) Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C)Symbol Ratings Unit Symbol Conditions Ratings Unit0.20.2 5.515.60.23.45VCBO 70 V ICBO VCB=70V 10max AVCEO 50 V IEBO VEB=6V

2SA1740SOT-89 Transistor(PNP)1. BASE SOT-892. COLLECTOR 4.6B4.41.61 1.81.41.43. EMITTER 2 2.64.253 2.43.75Features 0.8MIN0.530.40 0.48High breadown voltage 0.442x)0.13 B0.35 0.371.5 Excellent hFE linearlity 3.0Dimensions in inches and (millimeters)Marking: AK MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Param

SMD Type TransistorsPNP Transistors2SA1745 Features Low collector-to-emitter saturation voltage. Complementary to 2SC45551.Base2.Emitter3.Collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -20 Collector - Emitter Voltage VCEO -15 V Emitter - Base Voltage VEBO -5 Collector Current - Continuous IC -0.5

SMD Type TransistorsPNP Transistors2SA1748 Features High transition frequency fT. Small collector output capacitance Cob. Complementary to 2SC4562.1.Base2.Emitter3.Collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -50 Collector - Emitter Voltage VCEO -50 V Emitter - Base Voltage VEBO -5 Collect

SMD Type TransistorsPNP Transistors2SA1740SOT-89Unit:mm1.70 0.1 Features Collector Current Capability IC=-0.2A Collector Emitter Voltage VCEO=-400V Complementary to 2SC45480.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -400 Collector - Emitter Voltage V

2SA1746T5TLSilicon PNP Power TransistorDESCRIPTIONLow Collector Saturation Voltage:V = -0.5(V)(Max)@I = -5ACE(sat) CGood Linearity of hFEAPPLICATIONSDesigned for chopper regulator, switch and generalpurpose applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage -70 VCBOV Collector-Emitter Voltage -50 VCEOV Emi

2SA1744T2TLSilicon PNP Power TransistorDESCRIPTIONCollector-Emitter Sustaining Voltage-: V = -60V(Min)CEO(SUS)High DC Current Gain-: h = 100(Min)@ (V = -2V , I = -3A)FE CE CLow Saturation Voltage-: V = -0.3V(Max)@ (I = -8A, I = -0.4A)CE(sat) C BAPPLICATIONSThis type of power transistor is developed for high-speedswitching and features a high h at low V ,which

SPTECH Product SpecificationSPTECH Silicon PNP Power Transistor2SA1742DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = -60V(Min)CEOHigh DC Current Gain-: h = 100(Min)@ (V = -2V , I = -1A)FE CE CLow Saturation Voltage-: V = -0.3V(Max)@ (I = -3A, I = -0.15A)CE(sat) C BAPPLICATIONSThis type of power transistor is developed for high-speedswitching and feat

SPTECH Product SpecificationSPTECH Silicon PNP Power Transistor 2SA1746DESCRIPTIONLow Collector Saturation Voltage:V = -0.5(V)(Max)@I = -5ACE(sat) CGood Linearity of hFEAPPLICATIONSDesigned for chopper regulator, switch and generalpurpose applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage -70 VCBOV Collector-E

SPTECH Product SpecificationSPTECH Silicon PNP Power Transistor 2SA1744DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = -60V(Min)CEO(SUS)High DC Current Gain-: h = 100(Min)@ (V = -2V , I = -3A)FE CE CLow Saturation Voltage-: V = -0.3V(Max)@ (I = -8A, I = -0.4A)CE(sat) C BAPPLICATIONSThis type of power transistor is developed for high-speedswitching and f

isc Silicon PNP Power Transistor 2SA1742DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = -60V(Min)CEOHigh DC Current Gain-: h = 100(Min)@ (V = -2V , I = -1A)FE CE CLow Saturation Voltage-: V = -0.3V(Max)@ (I = -3A, I = -0.15A)CE(sat) C BMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSThis type of power trans

isc Silicon PNP Power Transistor 2SA1744DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = -60V(Min)CEO(SUS)High DC Current Gain-: h = 100(Min)@ (V = -2V , I = -3A)FE CE CLow Saturation Voltage-: V = -0.3V(Max)@ (I = -8A, I = -0.4A)CE(sat) C BMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSThis type of power t

isc Silicon PNP Power Transistor 2SA1741DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = -60V(Min)CEO(SUS)High DC Current Gain-: h = 100(Min)@ (V = -2V , I = -1A)FE CE CLow Saturation Voltage-: V = -0.3V(Max)@ (I = -3A, I = -0.15A)CE(sat) C BMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSThis type of power

isc Silicon PNP Power Transistor 2SA1746DESCRIPTIONLow Collector Saturation Voltage:V = -0.5(V)(Max)@I = -5ACE(sat) CGood Linearity of hFEMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for chopper regulator, switch and generalpurpose applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UN