2SA1745 Todos los transistores

SMD Type Transistors PNP Transistors 2SA1745 Features Low collector-to-emitter saturation voltage. Complementary to 2SC4555 1.Base 2.Emitter 3.Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -20 Collector - Emitter Voltage VCEO -15 V Emitter - Base Voltage VEBO -5 Collector Current - Continuous IC -0.5

Ordering number EN3643 PNP/NPN Epitaxial Planar Silicon Transistors 2SA1749/2SC4564 High-Definition CRT Display Video Output Applications Features Package Dimensions High fT fT=400MHz (typ). unit mm High breakdown voltage VCEO 200V min. 2042A High current. [2SA1749/2SC4564] Small reverse transfer capacitance and excellent high frequnecy chacateristics Cre=

DATA SHEET SILICON POWER TRANSISTOR 2SA1742 PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SA1742 is a power transistor developed for high-speed ORDERING INFORMATION switching and features a high hFE at low VCE(sat). This transistor is ideal Part No. Package for use as a driver in DC/DC converters and actuators. 2SA1742 Isolated TO-220 In addition, a small resin-molded

DATA SHEET SILICON POWER TRANSISTOR 2SA1744 PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SA1744 is a power transistor developed for high-speed PACKAGE DRAWING (UNIT mm) switching and features a high hFE at Low VCE(sat). This transistor is ideal for use as a driver in DC/DC converters and actuators. In addition, a small resin-molded insulation type package contributes

DATA SHEET SILICON POWER TRANSISTOR 2SA1741 PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SA1741 is a power transistor developed for high-speed PACKAGE DRAWING (UNIT mm) switching and features a high hFE at low VCE(sat). This transistor is ideal for use as a driver in DC/DC converters and actuators. In addition, a small resin-molded insulation type package contributes

DATA SHEET SILICON POWER TRANSISTOR 2SA1743 PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SA1743 is a power transistor developed for high-speed PACKAGE DRAWING (UNIT mm) switching and features a high hFE at low VCE(sat). This transistor is ideal for use as a driver in DC/DC converters and actuators. In addition, a small resin-molded insulation type package contributes

Transistor 2SA1748 Silicon PNP epitaxial planer type For high-frequency amplification Unit mm Complementary to 2SC4562 2.1 0.1 0.425 1.25 0.1 0.425 Features High transition frequency fT. 1 Small collector output capacitance Cob. S-Mini type package, allowing downsizing of the equipment and 3 automatic insertion through the tape packing and the magazine 2 packing. Absolute

Transistor 2SA1748 Silicon PNP epitaxial planer type For high-frequency amplification Unit mm Complementary to 2SC4562 2.1 0.1 0.425 1.25 0.1 0.425 Features High transition frequency fT. 1 Small collector output capacitance Cob. S-Mini type package, allowing downsizing of the equipment and 3 automatic insertion through the tape packing and the magazine 2 packing. Absolute

UNISONIC TECHNOLOGIES CO., LTD 2SA1740 PNP SILICON TRANSISTOR HIGH VOLTAGE DRIVER APPLICATION FEATURES *High breakdown voltage. *Excellent hFE linearity. ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 2SA1740L-x-AB3-R 2SA1740G-x-AB3-R SOT-89 B C E Tape Reel www.unisonic.com.tw 1 of 5 Copyright 2013 Unisonic Techno

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors SOT-89-3L 2SA1740 TRANSISTOR (PNP) 1. BASE FEATURES High breadown voltage 2. COLLECTOR Excellent hFE linearlity 3. EMITTER Marking AK MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -400 V VCEO Collector-Emitter

JMnic Product Specification Silicon PNP Power Transistors 2SA1741 DESCRIPTION With TO-220F package Low collector saturation voltage APPLICATIONS For use as a driver in DC/DC converters and actuators PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-220F) and symbol 3 Emitter Absolute maximum ratings (Ta=25 ) SYMBOL PARAMETER CONDITIONS VAL

JMnic Product Specification Silicon PNP Power Transistors 2SA1746 DESCRIPTION With TO-3PML package Low collector saturation voltage APPLICATIONS For chopper regulator,switch and general purpose applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector Fig.1 simplified outline (TO-3PML) and symbol 3 Base Absolute maximum ratings(Tc=25 ) SYMBOL PARAMETER COND

2SA1740 SOT-89 Transistor(PNP) 1. BASE SOT-89 2. COLLECTOR 4.6 B 4.4 1.6 1 1.8 1.4 1.4 3. EMITTER 2 2.6 4.25 3 2.4 3.75 Features 0.8 MIN 0.53 0.40 0.48 High breadown voltage 0.44 2x) 0.13 B 0.35 0.37 1.5 Excellent hFE linearlity 3.0 Dimensions in inches and (millimeters) Marking AK MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Param

SMD Type Transistors PNP Transistors 2SA1748 Features High transition frequency fT. Small collector output capacitance Cob. Complementary to 2SC4562. 1.Base 2.Emitter 3.Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -50 Collector - Emitter Voltage VCEO -50 V Emitter - Base Voltage VEBO -5 Collect

SMD Type Transistors PNP Transistors 2SA1740 SOT-89 Unit mm 1.70 0.1 Features Collector Current Capability IC=-0.2A Collector Emitter Voltage VCEO=-400V Complementary to 2SC4548 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -400 Collector - Emitter Voltage V

2SA1746T5TL Silicon PNP Power Transistor DESCRIPTION Low Collector Saturation Voltage V = -0.5(V)(Max)@I = -5A CE(sat) C Good Linearity of h FE APPLICATIONS Designed for chopper regulator, switch and general purpose applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage -70 V CBO V Collector-Emitter Voltage -50 V CEO V Emi

2SA1744T2TL Silicon PNP Power Transistor DESCRIPTION Collector-Emitter Sustaining Voltage- V = -60V(Min) CEO(SUS) High DC Current Gain- h = 100(Min)@ (V = -2V , I = -3A) FE CE C Low Saturation Voltage- V = -0.3V(Max)@ (I = -8A, I = -0.4A) CE(sat) C B APPLICATIONS This type of power transistor is developed for high-speed switching and features a high h at low V ,which

SPTECH Product Specification SPTECH Silicon PNP Power Transistor 2SA1742 DESCRIPTION Collector-Emitter Sustaining Voltage- V = -60V(Min) CEO High DC Current Gain- h = 100(Min)@ (V = -2V , I = -1A) FE CE C Low Saturation Voltage- V = -0.3V(Max)@ (I = -3A, I = -0.15A) CE(sat) C B APPLICATIONS This type of power transistor is developed for high-speed switching and feat

SPTECH Product Specification SPTECH Silicon PNP Power Transistor 2SA1746 DESCRIPTION Low Collector Saturation Voltage V = -0.5(V)(Max)@I = -5A CE(sat) C Good Linearity of h FE APPLICATIONS Designed for chopper regulator, switch and general purpose applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage -70 V CBO V Collector-E

SPTECH Product Specification SPTECH Silicon PNP Power Transistor 2SA1744 DESCRIPTION Collector-Emitter Sustaining Voltage- V = -60V(Min) CEO(SUS) High DC Current Gain- h = 100(Min)@ (V = -2V , I = -3A) FE CE C Low Saturation Voltage- V = -0.3V(Max)@ (I = -8A, I = -0.4A) CE(sat) C B APPLICATIONS This type of power transistor is developed for high-speed switching and f

isc Silicon PNP Power Transistor 2SA1742 DESCRIPTION Collector-Emitter Sustaining Voltage- V = -60V(Min) CEO High DC Current Gain- h = 100(Min)@ (V = -2V , I = -1A) FE CE C Low Saturation Voltage- V = -0.3V(Max)@ (I = -3A, I = -0.15A) CE(sat) C B Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS This type of power trans

isc Silicon PNP Power Transistor 2SA1744 DESCRIPTION Collector-Emitter Sustaining Voltage- V = -60V(Min) CEO(SUS) High DC Current Gain- h = 100(Min)@ (V = -2V , I = -3A) FE CE C Low Saturation Voltage- V = -0.3V(Max)@ (I = -8A, I = -0.4A) CE(sat) C B Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS This type of power t

isc Silicon PNP Power Transistor 2SA1741 DESCRIPTION Collector-Emitter Sustaining Voltage- V = -60V(Min) CEO(SUS) High DC Current Gain- h = 100(Min)@ (V = -2V , I = -1A) FE CE C Low Saturation Voltage- V = -0.3V(Max)@ (I = -3A, I = -0.15A) CE(sat) C B Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS This type of power

isc Silicon PNP Power Transistor 2SA1746 DESCRIPTION Low Collector Saturation Voltage V = -0.5(V)(Max)@I = -5A CE(sat) C Good Linearity of h FE Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for chopper regulator, switch and general purpose applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UN