2SA1748 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Transistor2SA1748Silicon PNP epitaxial planer typeFor high-frequency amplificationUnit: mmComplementary to 2SC45622.1 0.10.425 1.25 0.1 0.425FeaturesHigh transition frequency fT. 1Small collector output capacitance Cob.S-Mini type package, allowing downsizing of the equipment and3automatic insertion through the tape packing and the magazine2packing.Absolute

Transistor2SA1748Silicon PNP epitaxial planer typeFor high-frequency amplificationUnit: mmComplementary to 2SC45622.1 0.10.425 1.25 0.1 0.425FeaturesHigh transition frequency fT. 1Small collector output capacitance Cob.S-Mini type package, allowing downsizing of the equipment and3automatic insertion through the tape packing and the magazine2packing.Absolute

SMD Type TransistorsPNP Transistors2SA1748 Features High transition frequency fT. Small collector output capacitance Cob. Complementary to 2SC4562.1.Base2.Emitter3.Collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -50 Collector - Emitter Voltage VCEO -50 V Emitter - Base Voltage VEBO -5 Collect

Ordering number:EN3643PNP/NPN Epitaxial Planar Silicon Transistors2SA1749/2SC4564High-Definition CRT DisplayVideo Output ApplicationsFeatures Package Dimensions High fT : fT=400MHz (typ).unit:mm High breakdown voltage : VCEO 200V min.2042A High current.[2SA1749/2SC4564] Small reverse transfer capacitance and excellent highfrequnecy chacateristics :Cre=

DATA SHEETSILICON POWER TRANSISTOR2SA1742PNP SILICON EPITAXIAL TRANSISTORFOR HIGH-SPEED SWITCHINGThe 2SA1742 is a power transistor developed for high-speed ORDERING INFORMATIONswitching and features a high hFE at low VCE(sat). This transistor is idealPart No. Packagefor use as a driver in DC/DC converters and actuators.2SA1742 Isolated TO-220In addition, a small resin-molded

DATA SHEETSILICON POWER TRANSISTOR2SA1744PNP SILICON EPITAXIAL TRANSISTORFOR HIGH-SPEED SWITCHINGThe 2SA1744 is a power transistor developed for high-speed PACKAGE DRAWING (UNIT: mm)switching and features a high hFE at Low VCE(sat). This transistor isideal for use as a driver in DC/DC converters and actuators.In addition, a small resin-molded insulation type packagecontributes

DATA SHEETSILICON POWER TRANSISTOR2SA1741PNP SILICON EPITAXIAL TRANSISTORFOR HIGH-SPEED SWITCHINGThe 2SA1741 is a power transistor developed for high-speed PACKAGE DRAWING (UNIT: mm)switching and features a high hFE at low VCE(sat). This transistor isideal for use as a driver in DC/DC converters and actuators.In addition, a small resin-molded insulation type packagecontributes

DATA SHEETSILICON POWER TRANSISTOR2SA1743PNP SILICON EPITAXIAL TRANSISTORFOR HIGH-SPEED SWITCHINGThe 2SA1743 is a power transistor developed for high-speed PACKAGE DRAWING (UNIT: mm)switching and features a high hFE at low VCE(sat). This transistor isideal for use as a driver in DC/DC converters and actuators.In addition, a small resin-molded insulation type packagecontributes

UNISONIC TECHNOLOGIES CO., LTD 2SA1740 PNP SILICON TRANSISTOR HIGH VOLTAGE DRIVER APPLICATION FEATURES *High breakdown voltage. *Excellent hFE linearity. ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 2SA1740L-x-AB3-R 2SA1740G-x-AB3-R SOT-89 B C E Tape Reelwww.unisonic.com.tw 1 of 5 Copyright 2013 Unisonic Techno

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors SOT-89-3L 2SA1740 TRANSISTOR (PNP) 1. BASE FEATURES High breadown voltage 2. COLLECTOR Excellent hFE linearlity 3. EMITTER Marking: AK MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage -400 V VCEO Collector-Emitter

JMnic Product Specification Silicon PNP Power Transistors 2SA1741 DESCRIPTION With TO-220F package Low collector saturation voltage APPLICATIONS For use as a driver in DC/DC converters and actuators PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-220F) and symbol3 EmitterAbsolute maximum ratings (Ta=25) SYMBOL PARAMETER CONDITIONS VAL

JMnic Product Specification Silicon PNP Power Transistors 2SA1746 DESCRIPTION With TO-3PML package Low collector saturation voltage APPLICATIONS For chopper regulator,switch and general purpose applications PINNING PIN DESCRIPTION1 Emitter 2 CollectorFig.1 simplified outline (TO-3PML) and symbol 3 BaseAbsolute maximum ratings(Tc=25) SYMBOL PARAMETER COND

LOW VCE (sat) 2SA1746Silicon PNP Epitaxial Planar TransistorApplication : Chopper Regulator, Switch and General PurposeExternal Dimensions FM100(TO3PF) Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C)Symbol Ratings Unit Symbol Conditions Ratings Unit0.20.2 5.515.60.23.45VCBO 70 V ICBO VCB=70V 10max AVCEO 50 V IEBO VEB=6V

2SA1740SOT-89 Transistor(PNP)1. BASE SOT-892. COLLECTOR 4.6B4.41.61 1.81.41.43. EMITTER 2 2.64.253 2.43.75Features 0.8MIN0.530.40 0.48High breadown voltage 0.442x)0.13 B0.35 0.371.5 Excellent hFE linearlity 3.0Dimensions in inches and (millimeters)Marking: AK MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Param

SMD Type TransistorsPNP Transistors2SA1745 Features Low collector-to-emitter saturation voltage. Complementary to 2SC45551.Base2.Emitter3.Collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -20 Collector - Emitter Voltage VCEO -15 V Emitter - Base Voltage VEBO -5 Collector Current - Continuous IC -0.5

SMD Type TransistorsPNP Transistors2SA1740SOT-89Unit:mm1.70 0.1 Features Collector Current Capability IC=-0.2A Collector Emitter Voltage VCEO=-400V Complementary to 2SC45480.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -400 Collector - Emitter Voltage V

2SA1746T5TLSilicon PNP Power TransistorDESCRIPTIONLow Collector Saturation Voltage:V = -0.5(V)(Max)@I = -5ACE(sat) CGood Linearity of hFEAPPLICATIONSDesigned for chopper regulator, switch and generalpurpose applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage -70 VCBOV Collector-Emitter Voltage -50 VCEOV Emi

2SA1744T2TLSilicon PNP Power TransistorDESCRIPTIONCollector-Emitter Sustaining Voltage-: V = -60V(Min)CEO(SUS)High DC Current Gain-: h = 100(Min)@ (V = -2V , I = -3A)FE CE CLow Saturation Voltage-: V = -0.3V(Max)@ (I = -8A, I = -0.4A)CE(sat) C BAPPLICATIONSThis type of power transistor is developed for high-speedswitching and features a high h at low V ,which

SPTECH Product SpecificationSPTECH Silicon PNP Power Transistor2SA1742DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = -60V(Min)CEOHigh DC Current Gain-: h = 100(Min)@ (V = -2V , I = -1A)FE CE CLow Saturation Voltage-: V = -0.3V(Max)@ (I = -3A, I = -0.15A)CE(sat) C BAPPLICATIONSThis type of power transistor is developed for high-speedswitching and feat

SPTECH Product SpecificationSPTECH Silicon PNP Power Transistor 2SA1746DESCRIPTIONLow Collector Saturation Voltage:V = -0.5(V)(Max)@I = -5ACE(sat) CGood Linearity of hFEAPPLICATIONSDesigned for chopper regulator, switch and generalpurpose applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage -70 VCBOV Collector-E

SPTECH Product SpecificationSPTECH Silicon PNP Power Transistor 2SA1744DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = -60V(Min)CEO(SUS)High DC Current Gain-: h = 100(Min)@ (V = -2V , I = -3A)FE CE CLow Saturation Voltage-: V = -0.3V(Max)@ (I = -8A, I = -0.4A)CE(sat) C BAPPLICATIONSThis type of power transistor is developed for high-speedswitching and f

isc Silicon PNP Power Transistor 2SA1742DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = -60V(Min)CEOHigh DC Current Gain-: h = 100(Min)@ (V = -2V , I = -1A)FE CE CLow Saturation Voltage-: V = -0.3V(Max)@ (I = -3A, I = -0.15A)CE(sat) C BMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSThis type of power trans

isc Silicon PNP Power Transistor 2SA1744DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = -60V(Min)CEO(SUS)High DC Current Gain-: h = 100(Min)@ (V = -2V , I = -3A)FE CE CLow Saturation Voltage-: V = -0.3V(Max)@ (I = -8A, I = -0.4A)CE(sat) C BMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSThis type of power t

isc Silicon PNP Power Transistor 2SA1741DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = -60V(Min)CEO(SUS)High DC Current Gain-: h = 100(Min)@ (V = -2V , I = -1A)FE CE CLow Saturation Voltage-: V = -0.3V(Max)@ (I = -3A, I = -0.15A)CE(sat) C BMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSThis type of power

isc Silicon PNP Power Transistor 2SA1746DESCRIPTIONLow Collector Saturation Voltage:V = -0.5(V)(Max)@I = -5ACE(sat) CGood Linearity of hFEMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for chopper regulator, switch and generalpurpose applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UN