2SA175 Datasheet. Equivalente

 0.1. Size:105K  sanyo
 2sa1753 2sc4577.pdf

 0.2. Size:45K  rohm
 2sa1759 2sc4505 2sc4620.pdf

2SA1759 Transistors Transistors 2SC4505 / 2SC4620 (96-97-A324) (96-178-C300) 305

 0.3. Size:64K  rohm
 2sa1757 1-2 2sa1906 1-2.pdf

 0.4. Size:67K  rohm
 2sa1759.pdf

2SA1759 Transistors High-voltage Switching Transistor (Camera strobes and Telephone, Power supply) (-400V, -0.1A) 2SA1759 Dimensions (Unit mm) Features 1) High breakdown voltage. (BVCEO = -400V) MPT3 2) Low saturation voltage, 4.5 1.5 typically VCE (sat)= -0.2V at IC / IB = -20mA / -2mA. 1.6 3) High switching speed, typically tf = 1 s at Ic =100mA. 4) Wide SOA

 0.5. Size:160K  jmnic
 2sa1758.pdf

JMnic Product Specification Silicon PNP Power Transistors 2SA1758 DESCRIPTION With TO-220Fa package Low collector saturation voltage Wide area of safe operation APPLICATIONS For power switching applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector 3 Base Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage

 0.6. Size:155K  jmnic
 2sa1757.pdf

JMnic Product Specification Silicon PNP Power Transistors 2SA1757 DESCRIPTION With TO-220Fa package Low saturation voltage Wide area of safe operation APPLICATIONS For switching applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector 3 Base Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -1

 0.7. Size:984K  kexin
 2sa1759.pdf

SMD Type Transistors PNP Transistors 2SA1759 SOT-89 Unit mm 1.70 0.1 Features Collector Current Capability IC=-0.1A Collector Emitter Voltage VCEO=-400V High switching speed Complements to 2SC4505 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -400 Coll

 0.8. Size:175K  cn sptech
 2sa1758d 2sa1758e 2sa1758f.pdf

SPTECH Product Specification SPTECH Silicon PNP Power Transistor 2SA1758 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -60V(Min) (BR)CEO DC Current Gain- h = 60(Min)@ (V = -2V, I = -2A) FE CE C Low Saturation Voltage- V = -0.3V(Max)@ (I = -6A, I = -0.3A) CE(sat) C B APPLICATIONS Designed for power switching applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a

 0.9. Size:217K  inchange semiconductor
 2sa1758.pdf

isc Silicon PNP Power Transistor 2SA1758 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -60V(Min) (BR)CEO DC Current Gain- h = 60(Min)@ (V = -2V, I = -2A) FE CE C Low Saturation Voltage- V = -0.3V(Max)@ (I = -6A, I = -0.3A) CE(sat) C B Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power switching

 0.10. Size:215K  inchange semiconductor
 2sa1757.pdf

isc Silicon PNP Power Transistor 2SA1757 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -60V(Min) (BR)CEO High Switching Speed Low Saturation Voltage- V = -0.3V(Max)@ (I = -3A, I = -0.15A) CE(sat) C B Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power switching applicat