2SA175 Datasheet. Specs and Replacement
Type Designator: 2SA175 📄📄
Material of Transistor: Ge
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.055 W
Maximum Collector-Base Voltage |Vcb|: 18 V
Maximum Collector-Emitter Voltage |Vce|: 12 V
Maximum Collector Current |Ic max|: 0.005 A
Max. Operating Junction Temperature (Tj): 75 °C
Electrical Characteristics
Transition Frequency (ft): 40 MHz
Collector Capacitance (Cc): 3 pF
Forward Current Transfer Ratio (hFE), MIN: 80
Noise Figure, dB: -
Package: TO44
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2SA175 datasheet
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2sa1759.pdf 
2SA1759 Transistors High-voltage Switching Transistor (Camera strobes and Telephone, Power supply) (-400V, -0.1A) 2SA1759 Dimensions (Unit mm) Features 1) High breakdown voltage. (BVCEO = -400V) MPT3 2) Low saturation voltage, 4.5 1.5 typically VCE (sat)= -0.2V at IC / IB = -20mA / -2mA. 1.6 3) High switching speed, typically tf = 1 s at Ic =100mA. 4) Wide SOA... See More ⇒
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2sa1758.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SA1758 DESCRIPTION With TO-220Fa package Low collector saturation voltage Wide area of safe operation APPLICATIONS For power switching applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector 3 Base Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage... See More ⇒
0.6. Size:155K jmnic
2sa1757.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SA1757 DESCRIPTION With TO-220Fa package Low saturation voltage Wide area of safe operation APPLICATIONS For switching applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector 3 Base Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -1... See More ⇒
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2sa1759.pdf
SMD Type Transistors PNP Transistors 2SA1759 SOT-89 Unit mm 1.70 0.1 Features Collector Current Capability IC=-0.1A Collector Emitter Voltage VCEO=-400V High switching speed Complements to 2SC4505 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -400 Coll... See More ⇒
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2sa1758d 2sa1758e 2sa1758f.pdf
SPTECH Product Specification SPTECH Silicon PNP Power Transistor 2SA1758 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -60V(Min) (BR)CEO DC Current Gain- h = 60(Min)@ (V = -2V, I = -2A) FE CE C Low Saturation Voltage- V = -0.3V(Max)@ (I = -6A, I = -0.3A) CE(sat) C B APPLICATIONS Designed for power switching applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a ... See More ⇒
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2sa1758.pdf
isc Silicon PNP Power Transistor 2SA1758 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -60V(Min) (BR)CEO DC Current Gain- h = 60(Min)@ (V = -2V, I = -2A) FE CE C Low Saturation Voltage- V = -0.3V(Max)@ (I = -6A, I = -0.3A) CE(sat) C B Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power switching ... See More ⇒
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2sa1757.pdf
isc Silicon PNP Power Transistor 2SA1757 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -60V(Min) (BR)CEO High Switching Speed Low Saturation Voltage- V = -0.3V(Max)@ (I = -3A, I = -0.15A) CE(sat) C B Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power switching applicat... See More ⇒
Detailed specifications: 2SA1741, 2SA1742, 2SA1743, 2SA1744, 2SA1745, 2SA1746, 2SA1747, 2SA1748, 2N5401, 2SA176, 2SA1760, 2SA1761, 2SA1763, 2SA1764, 2SA1767, 2SA1771, 2SA178
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