2SA1761 Datasheet. Equivalente

 ..1. Size:189K  toshiba
 2sa1761.pdf

 8.1. Size:87K  sanyo
 2sa1766.pdf

Ordering number EN3182B PNP Epitaxial Planar Silicon Transistor 2SA1766 High hFE, Low-Frequency General-Purpose Amplifier Applications Features Package Dimensions Adoption of FBET, MBIT processes. unit mm High DC current gain (hFE=500 to 1200). 2038 Large current capacity. [2SA1766] Low collector-to-emitter saturation voltage. High VEBO. E Emitter C Collec

 8.2. Size:106K  sanyo
 2sa1768.pdf

Ordering number ENN3582 PNP/NPN Epitaxial Planar Silicon Transistors 2SA1768/2SC4612 High-Voltage Switching Applications Applicaitons Package Dimensions Color TV sound output, converter, inverter. unit mm 2064A Features [2SA1768/2SC4612] 2.5 Adoption of MBIT process. 1.45 High breakdown voltage, large current capacity. 6.9 1.0 Fast switching speed. 0.6 0.9 0.5 1

 8.3. Size:131K  sanyo
 2sa1769 2sc4613.pdf

 8.4. Size:102K  sanyo
 2sa1764.pdf

Ordering number EN3180B PNP Epitaxial Planar Silicon Transistor 2SA1764 High-Speed Switching Applications Features Package Dimensions Fast switching speed. unit mm Low collector saturation voltage. 2018A High gain-bandwidth product. [2SA1764] Small collector capacitacne. Small-sized package permitting the 2SA1764-applied sets to be made small and slim. Comp

 8.5. Size:99K  sanyo
 2sa1765.pdf

Ordering number EN3181A PNP Epitaxial Planar Silicon Transistor 2SA1765 High-Speed Switching Applications Features Package Dimensions Fast switching speed. unit mm Low collector saturation voltage. 2033 High gain-bandwidth product. [2SA1765] Small collector capacitance. Complementary pair with the 2SC4454. B Base C Collector E Emitter SANYO SPA Speci

 8.6. Size:110K  sanyo
 2sa1763.pdf

Ordering number EN3179A PNP Epitaxial Planar Silicon Transistor 2SA1763 High-Speed Switching Applications Features Package Dimensions Fast switching speed. unit mm Low collector saturation voltage. 2059 High gain-bandwidth product. [2SA1763] Small collector capacitance. Very small-sized package permitting the 2SA1763- applied sets to be made small and slim.

 8.7. Size:520K  onsemi
 2sa1768s-an 2sa1768t-an.pdf

Ordering number EN3582A 2SA1768 Bipolar Transistor http //onsemi.com ( ) 180V, 160A, Low VCE sat PNP Single NMP Applicaitons Color TV sound output, converter, inverter Features Adoption of MBIT process High breakdown voltage, large current capacity Fast switching speed Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings

 8.8. Size:39K  panasonic
 2sa1767 e.pdf

Transistor 2SA1767 Silicon PNP epitaxial planer type For general amplification Unit mm Complementary to 2SC1473A 5.0 0.2 4.0 0.2 Features High collector to emitter voltage VCEO. Absolute Maximum Ratings (Ta=25 C) Parameter Symbol Ratings Unit Collector to base voltage VCBO 300 V +0.2 +0.2 0.45 0.1 0.45 0.1 Collector to emitter voltage VCEO 300 V 1.27 1.27 Emitt

 8.9. Size:48K  panasonic
 2sa1762.pdf

Transistor 2SA1762 Silicon PNP epitaxial planer type For low-frequency driver amplification Unit mm Complementary to 2SC4606 6.9 0.1 2.5 0.1 1.5 1.5 R0.9 1.0 Features R0.9 High collector to emitter voltage VCEO. Optimum for the driver stage of a low-frequency and 25 to 30W output amplifier. 0.85 Absolute Maximum Ratings (Ta=25 C) 0.55 0.1 0.45 0.05 Parameter Symbol

 8.10. Size:52K  panasonic
 2sa1762 e.pdf

Transistor 2SA1762 Silicon PNP epitaxial planer type For low-frequency driver amplification Unit mm Complementary to 2SC4606 6.9 0.1 2.5 0.1 1.5 1.5 R0.9 1.0 Features R0.9 High collector to emitter voltage VCEO. Optimum for the driver stage of a low-frequency and 25 to 30W output amplifier. 0.85 Absolute Maximum Ratings (Ta=25 C) 0.55 0.1 0.45 0.05 Parameter Symbol

 8.11. Size:36K  panasonic
 2sa1767.pdf

Transistor 2SA1767 Silicon PNP epitaxial planer type For general amplification Unit mm Complementary to 2SC1473A 5.0 0.2 4.0 0.2 Features High collector to emitter voltage VCEO. Absolute Maximum Ratings (Ta=25 C) Parameter Symbol Ratings Unit Collector to base voltage VCBO 300 V +0.2 +0.2 0.45 0.1 0.45 0.1 Collector to emitter voltage VCEO 300 V 1.27 1.27 Emitt

 8.12. Size:1034K  kexin
 2sa1766.pdf

SMD Type Transistors PNP Transistors 2SA1766 1.70 0.1 Features Adoption of FBET, MBIT processes. High DC current gain (hFE=500 to 1200). Large current capacity. 0.42 0.1 0.46 0.1 Low collector-to-emitter saturation voltage. High VEBO. 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base

 8.13. Size:1309K  kexin
 2sa1764.pdf

SMD Type Transistors PNP Transistors 2SA1764 SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4-0.1 3 Features Collector Current Capability IC=-200mA 1 2 Collector Emitter Voltage VCEO=-15V +0.1 +0.05 0.95 -0.1 0.1 -0.01 Complementary to 2SC4453 +0.1 1.9 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collect