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2SA178 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 2SA178
   Material: Ge
   Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.055 W
   Tensión colector-base (Vcb): 18 V
   Tensión colector-emisor (Vce): 12 V
   Corriente del colector DC máxima (Ic): 0.005 A
   Temperatura operativa máxima (Tj): 75 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 35 MHz
   Ganancia de corriente contínua (hfe): 30
   Paquete / Cubierta: TO44

 Búsqueda de reemplazo de transistor bipolar 2SA178

 

2SA178 Datasheet (PDF)

 0.1. Size:186K  sanyo
2sa1783.pdf

2SA178
2SA178

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2sa1785.pdf

2SA178
2SA178

 0.3. Size:121K  sanyo
2sa1786.pdf

2SA178
2SA178

 0.4. Size:121K  sanyo
2sa1787.pdf

2SA178
2SA178

 0.5. Size:102K  sanyo
2sa1784.pdf

2SA178
2SA178

 0.6. Size:161K  jmnic
2sa1788.pdf

2SA178
2SA178

JMnic Product Specification Silicon PNP Power Transistors 2SA1788 DESCRIPTION With TO-247 package Complement to type 2SC4652 APPLICATIONS For audio output applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base 3 EmitterAbsolute maximum ratings(Tc=25) SYMBOL PARAMETER CONDITIONS VALUE UNITVCBO Collector-base voltage Open emitt

 0.7. Size:161K  jmnic
2sa1789.pdf

2SA178
2SA178

JMnic Product Specification Silicon PNP Power Transistors 2SA1789 DESCRIPTION With TO-247 package Complement to type 2SC4653 Low collector saturation voltage APPLICATIONS For audio output applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base 3 EmitterAbsolute maximum ratings(Tc=25) SYMBOL PARAMETER CONDITIONS VALUE UNITV

 0.8. Size:198K  inchange semiconductor
2sa1788.pdf

2SA178
2SA178

isc Silicon PNP Power Transistor 2SA1788DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-V = -120V(Min)(BR)CEOGood Linearity of hFEMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio and general purpose applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Volt

 0.9. Size:198K  inchange semiconductor
2sa1789.pdf

2SA178
2SA178

isc Silicon PNP Power Transistor 2SA1789DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-V = -60V(Min)(BR)CEOGood Linearity of hFEMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio and general purpose applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Volta

Otros transistores... 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SA1837 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .

History: BUY46-4

 

 
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History: BUY46-4

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Recientemente añadidas las descripciónes de los transistores:

BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050

 

 

 
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