2SA178 Specs and Replacements, Transistor Equivalent Finder, Cross Reference. AllTransistors.com

2SA178 Specs and Replacement

   Type Designator: 2SA178
   Material of Transistor: Ge
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 0.055 W
   Maximum Collector-Base Voltage |Vcb|: 18 V
   Maximum Collector-Emitter Voltage |Vce|: 12 V
   Maximum Collector Current |Ic max|: 0.005 A
   Max. Operating Junction Temperature (Tj): 75 °C
   Transition Frequency (ft): 35 MHz
   Forward Current Transfer Ratio (hFE), MIN: 30
   Noise Figure, dB: -
   Package: TO44

2SA178 Substitution

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2SA178 detailed specifications

0.1. Size:186K sanyo
2sa1783.pdf pdf_icon

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0.2. Size:121K sanyo
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0.3. Size:121K sanyo
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0.4. Size:121K sanyo
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0.5. Size:102K sanyo
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0.6. Size:161K jmnic
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JMnic Product Specification Silicon PNP Power Transistors 2SA1788 DESCRIPTION With TO-247 package Complement to type 2SC4652 APPLICATIONS For audio output applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Absolute maximum ratings(Tc=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitt... See More ⇒

0.7. Size:161K jmnic
2sa1789.pdf pdf_icon

JMnic Product Specification Silicon PNP Power Transistors 2SA1789 DESCRIPTION With TO-247 package Complement to type 2SC4653 Low collector saturation voltage APPLICATIONS For audio output applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Absolute maximum ratings(Tc=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT V... See More ⇒

0.8. Size:198K inchange semiconductor
2sa1788.pdf pdf_icon

isc Silicon PNP Power Transistor 2SA1788 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = -120V(Min) (BR)CEO Good Linearity of h FE Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio and general purpose applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Volt... See More ⇒

0.9. Size:198K inchange semiconductor
2sa1789.pdf pdf_icon

isc Silicon PNP Power Transistor 2SA1789 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = -60V(Min) (BR)CEO Good Linearity of h FE Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio and general purpose applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Volta... See More ⇒

Detailed specifications: 2SA175 , 2SA176 , 2SA1760 , 2SA1761 , 2SA1763 , 2SA1764 , 2SA1767 , 2SA1771 , TIP122 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2SA1796 , 2SA1799 .

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