2SA1790 Todos los transistores

Transistor 2SA1790 Silicon PNP epitaxial planer type For high-frequency amplification Unit mm Complementary to 2SC4626 1.6 0.15 0.4 0.8 0.1 0.4 Features High transition frequency fT. SS-Mini type package, allowing downsizing of the equipment 1 and automatic insertion through the tape packing and the maga- 3 zine packing. 2 Absolute Maximum Ratings (Ta=25 C) Parameter Symbo

Transistor 2SA1790 Silicon PNP epitaxial planer type For high-frequency amplification Unit mm Complementary to 2SC4626 1.6 0.15 0.4 0.8 0.1 0.4 Features High transition frequency fT. SS-Mini type package, allowing downsizing of the equipment 1 and automatic insertion through the tape packing and the maga- 3 zine packing. 2 Absolute Maximum Ratings (Ta=25 C) Parameter Symbo

Ordering number EN3709 PNP Epitaxial Planar Silicon Transistors 2SA1798 20V/8A Switching Applications Features Package Dimensions Adoption of MBIT processes. unit mm Low saturation voltage. 2042A Fast switching speed. [2SA1798] Large current capacity. B Base C Collector E Emitter SANYO TO-126ML Specifications Absolute Maximum Ratings at Ta = 25 C Param

2SA1797 / 2SB1443 Transistors Power Transistor (-50V, -2A) 2SA1797 / 2SB1443 Features 1) Low saturation voltage. VCE (sat) = -0.35V (Max.) at IC / IB = -1A / -50mA. 2) Excellent DC current gain characteristics. 4) Complements the 2SA1797 and 2SC4672. Absolute maximum ratings (Ta=25 C) Parameter Symbol Limits Unit Collector-base voltage VCBO -50 V Collector-emitter voltage

2SA1797 / 2SB1443 Transistors Transistors 2SC4672 (96-100-B208) (96-181-D208) 291

Power Transistor (-50V, -3A) 2SA1797 Features Dimensions (Unit mm) 1) Low saturation voltage. MPT3 VCE (sat) = -0.35V (Max.) at IC / IB = -1A / 50mA. 2) Excellent DC current gain characteristics. 4.5 1.5 1.6 3) Complements the 2SC4672. (1) (2) (3) Packaging specifications 0.4 0.5 0.4 0.4 Type 2SA1797 1.5 1.5 3.0 (1)Base Package MPT3 (2)Collector hFE PQ (3)Emi

Transistor 2SA1791 Silicon PNP epitaxial planer type For high-frequency amplification Unit mm Complementary to 2SC4656 1.6 0.15 0.4 0.8 0.1 0.4 Features High transition frequency fT. Small collector output capacitance Cob. 1 SS-Mini type package, allowing downsizing of the equipment 3 and automatic insertion through the tape packing and the maga- zine packing. 2 Absolute Ma

Transistor 2SA1791 Silicon PNP epitaxial planer type For high-frequency amplification Unit mm Complementary to 2SC4656 1.6 0.15 0.4 0.8 0.1 0.4 Features High transition frequency fT. Small collector output capacitance Cob. 1 SS-Mini type package, allowing downsizing of the equipment 3 and automatic insertion through the tape packing and the maga- zine packing. 2 Absolute Ma

UNISONIC TECHNOLOGIES CO., LTD 2SA1797 PNP SILICON TRANSISTOR POWER TRANSISTOR FEATURES * Low Saturation Voltage. VCE(SAT)=-0.35V(MAX) at IC / IB=-1A / -50mA * Excellent DC Current Gain Characteristics ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 - 2SA1797G-x-AA3-R SOT-223 B C E Tape Reel - 2SA1797G-x-AB3-R SOT-8

2SA1797 PNP General Purpose Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-89 FEATURES 4 High transition frequency High power dissipation 1 2 3 A PACKAGE DIMENSIONS E C B D 1 F G 2 H K 3 J L 1. Base 2. Collector Millimeter Millimeter REF. REF. 3. Emitter Min. Max. Min. Max. A 4.40

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors SOT-89-3L 2SA1797 TRANSISTOR (PNP) 1. BASE FEATURES Low saturation voltage 2. COLLECTOR 1 Excellent DC current gain characteristics 2 Complements to 2SC4672 3. EMITTER 3 MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base

SHINDENGEN Switching Power Transistor LSV Series OUTLINE DIMENSIONS 2SA1795 Case E-pack (TE5T4) Unit mm -5A PNP RATINGS

SHINDENGEN Switching Power Transistor LSV Series OUTLINE DIMENSIONS 2SA1796 Case E-pack (TE7T4) Unit mm -7A PNP RATINGS

2SA1797 SOT-89 Transistor(PNP) 1. BASE SOT-89 2. COLLECTOR 4.6 B 1 4.4 1.6 1.8 1.4 1.4 2 3. EMITTER 3 2.6 4.25 2.4 3.75 Features 0.8 MIN 0.53 Low saturation voltage 0.40 0.48 0.44 2x) 0.13 B 0.35 0.37 Excellent DC current gain characteristics 1.5 3.0 Complements to 2SC4672 Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25 unless other

WILLAS 2SA1797 SOT-89 Plastic-Encapsulate Transistors TRANSISTOR (PNP) FEATURES SOT-89 Low saturation voltage Excellent DC current gain characteristics 1. BASE Pb-Free package is available RoHS product for packing code suffix "G" 2. COLLECTOR 1 Halogen free product for packing code suffix "H" 2 3. EMITTER 3 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parame

SMD Type Transistors Power Transistor 2SA1797 SOT-89 Unit mm +0.1 4.50-0.1 1.50+0.1 -0.1 1.80+0.1 -0.1 Features Low saturation voltage. VCE(sat)=-0.35V(Max.) at IC / IB=-1A/-50mA. 0.48+0.1 0.53+0.1 0.44+0.1 -0.1 -0.1 -0.1 Excellent DC current gain characteristics. Complements the 2SA1797 and 2SC4672. 1. Base 3.00+0.1 -0.1 2. Collector 3. Emiitter Absolute Maximum Ratings Ta

SMD Type Transistors PNP Transistors 2SA1797 Features 1.70 0.1 Low saturation voltage Excellent DC current gain characteristics Complements to 2SC4672 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -50 Collector - Emitter Voltage VCEO -50 V Emitter - Base Vol

SMD Type Transistors Power Transistor 2SA1797 SOT-89 Unit mm +0.1 4.50-0.1 1.50+0.1 -0.1 1.80+0.1 -0.1 Features Low saturation voltage. VCE(sat)=-0.35V(Max.) at IC / IB=-1A/-50mA. 0.48+0.1 0.53+0.1 0.44+0.1 -0.1 -0.1 -0.1 Excellent DC current gain characteristics. Complements the 2SA1797 and 2SC4672. 1. Base 3.00+0.1 -0.1 2. Collector 3. Emiitter Absolute Maximum Ratings Ta

2SA1797 PNP Transistors Features 3 Low saturation voltage Excellent DC current gain characteristics 2 Complements to 2SC4672 1.Base 1 2.Collector 3.Emitter Simplified outline(SOT-89) Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -50 Collector - Emitter Voltage VCEO -50 V Emitter - Base Voltage VEBO -6

DATA SHEET 2SA1797 PNP GENERAL PURPOSE TRANSISTORS VOLTAGE -50 V CURRENT -3 A FEATURES LOW SATURATION VOLTAGE VCE(SAT)= -0.35V@IC/IB= -1A/-50mA EXCELLENT DC CURRENT GAIN PNP SILICON EPITAXIAL PLANAR TRANSISTOR FOR SWITCHING AND AMPLIFIER APPLICATIONS LEAD FREE AND HALOGEN-FREE E MECHANICAL DATA C B CASE SOT-89 PACKAGE TERMINALS SOLDERABLE PER MIL-ST

Plastic-Encapsulate Transistors FEATURES 2SA1797 (PNP) Low saturation voltage Excellent DC current gain characteristics Complements to 2SC4672 Maximum Ratings (Ta=25 unless otherwise noted) Parameter Symbol Value Unit Collector-Base Voltage VCBO -50 V Collector-Emitter Voltage VCEO -50 V 1. BASE Emitter-Base Voltage VEBO -6 V 2. COLLECTO SOT-89 Collector Current -Contin