2SA1800O Todos los transistores

 

2SA1800O . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SA1800O

Material: Si

Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 10 W

Tensión colector-base (Vcb): 250 V

Tensión colector-emisor (Vce): 250 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 0.15 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Producto de corriente -- ganancia — ancho de banda (ft): 240 MHz

Capacitancia de salida (Cc): 5.5 pF

Ganancia de corriente contínua (hfe): 60

Empaquetado / Estuche: TO220

Búsqueda de reemplazo de transistor bipolar 2SA1800O

 

2SA1800O Datasheet (PDF)

8.1. 2sa1802.pdf Size:89K _toshiba

2SA1800O
2SA1800O

2SA1802 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA1802 Strobe Flash Applications Unit: mm Medium Power Amplifier Applications Excellent hFE linearity : h = 200 to 600 (V = -2 V, I = -0.5 A) FE (1) CE C: h = 140 (min), 200 (typ.) (V = -2 V, I = -3 A) FE (2) CE C Low collector saturation voltage : V = -0.5 V (max) (I = -3 A, I = -60 mA) CE (sat) C B C

8.2. 2sa1803.pdf Size:178K _toshiba

2SA1800O
2SA1800O

 8.3. 2sa1805.pdf Size:176K _toshiba

2SA1800O
2SA1800O

8.4. 2sa1804.pdf Size:177K _toshiba

2SA1800O
2SA1800O

 8.5. 2sa1801.pdf Size:122K _toshiba

2SA1800O
2SA1800O

8.6. 2sa1807 2sa1862.pdf Size:56K _rohm

2SA1800O
2SA1800O

2SA1807TransistorsTransistors2SA1862(96-102-A331)(96-109-A343)307Appendix NotesNo technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD.The contents described herein are subject to change without notice. The specifications for theproduct described in this document are for reference onl

8.7. 2sa1807.pdf Size:43K _rohm

2SA1800O

2SA1807TransistorsTransistors2SA1862(96-102-A331)(96-109-A343)307

8.8. 2sa1806.pdf Size:40K _panasonic

2SA1800O
2SA1800O

Transistor2SA1806Silicon PNP epitaxial planer typeFor high speed switchingUnit: mm1.6 0.150.4 0.8 0.1 0.4FeaturesHigh-speed switching.Low collector to emitter saturation voltage VCE(sat). 1SS-Mini type package, allowing downsizing of the equipment3and automatic insertion through the tape packing and the maga-zine packing.2Absolute Maximum Ratings (Ta=25C)Pa

8.9. 2sa1806 e.pdf Size:44K _panasonic

2SA1800O
2SA1800O

Transistor2SA1806Silicon PNP epitaxial planer typeFor high speed switchingUnit: mm1.6 0.150.4 0.8 0.1 0.4FeaturesHigh-speed switching.Low collector to emitter saturation voltage VCE(sat). 1SS-Mini type package, allowing downsizing of the equipment3and automatic insertion through the tape packing and the maga-zine packing.2Absolute Maximum Ratings (Ta=25C)Pa

8.10. 2sa1803.pdf Size:263K _jmnic

2SA1800O
2SA1800O

JMnic Product Specification Silicon PNP Power Transistors 2SA1803 DESCRIPTION With TO-3PFM package Complement to type 2SC4688 APPLICATIONS Power amplifier applications Recommend for 40W high fidelity audio frequency amplifier output stage PINNING (see Fig.2 ) PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-3PFM) and symbol 3 EmitterAbsolute

8.11. 2sa1805.pdf Size:211K _jmnic

2SA1800O
2SA1800O

JMnic Product Specification Silicon PNP Power Transistors 2SA1805 DESCRIPTION With TO-3PFM package Complement to type 2SC4690 APPLICATIONS Power amplifier applications Recommend for 70W high fidelity audio frequency amplifier output stage PINNING (see Fig.2 ) PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-3PFM) and symbol 3 EmitterAbsolute

8.12. 2sa1804.pdf Size:243K _jmnic

2SA1800O
2SA1800O

JMnic Product Specification Silicon PNP Power Transistors 2SA1804 DESCRIPTION With TO-3PFM package Complement to type 2SC4689 APPLICATIONS Power amplifier applications Recommend for 55W high fidelity audio frequency amplifier output stage PINNING(See Fig.2) PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-3PFM) and symbol 3 EmitterAbsolute ma

8.13. 2sa1803.pdf Size:163K _inchange_semiconductor

2SA1800O
2SA1800O

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA1803 DESCRIPTION With TO-3PML package Complement to type 2SC4688 APPLICATIONS Power amplifier applications Recommend for 40W high fidelity audio frequency amplifier output stage PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-3PML) and symbol 3 EmitterAbsol

8.14. 2sa1805.pdf Size:203K _inchange_semiconductor

2SA1800O
2SA1800O

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA1805 DESCRIPTION With TO-3PML package Complement to type 2SC4690 APPLICATIONS Power amplifier applications Recommend for 70W high fidelity audio frequency amplifier output stage PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-3PML) and symbol 3 EmitterAbsol

8.15. 2sa1804.pdf Size:216K _inchange_semiconductor

2SA1800O
2SA1800O

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA1804 DESCRIPTION With TO-3PML package Complement to type 2SC4689 APPLICATIONS Power amplifier applications Recommend for 55W high fidelity audio frequency amplifier output stage PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-3PML) and symbol 3 EmitterAbsol

Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , 9012 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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