2SA1806 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SA1806 📄📄
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.15 W
Tensión colector-base (Vcb): 15 V
Tensión colector-emisor (Vce): 12 V
Corriente del colector DC máxima (Ic): 0.05 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 800 MHz
Ganancia de corriente contínua (hFE): 120
Encapsulados: TO236
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2SA1806 datasheet
2sa1806.pdf
Transistor 2SA1806 Silicon PNP epitaxial planer type For high speed switching Unit mm 1.6 0.15 0.4 0.8 0.1 0.4 Features High-speed switching. Low collector to emitter saturation voltage VCE(sat). 1 SS-Mini type package, allowing downsizing of the equipment 3 and automatic insertion through the tape packing and the maga- zine packing. 2 Absolute Maximum Ratings (Ta=25 C) Pa
2sa1806 e.pdf
Transistor 2SA1806 Silicon PNP epitaxial planer type For high speed switching Unit mm 1.6 0.15 0.4 0.8 0.1 0.4 Features High-speed switching. Low collector to emitter saturation voltage VCE(sat). 1 SS-Mini type package, allowing downsizing of the equipment 3 and automatic insertion through the tape packing and the maga- zine packing. 2 Absolute Maximum Ratings (Ta=25 C) Pa
2sa1802.pdf
2SA1802 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA1802 Strobe Flash Applications Unit mm Medium Power Amplifier Applications Excellent hFE linearity h = 200 to 600 (V = -2 V, I = -0.5 A) FE (1) CE C h = 140 (min), 200 (typ.) (V = -2 V, I = -3 A) FE (2) CE C Low collector saturation voltage V = -0.5 V (max) (I = -3 A, I = -60 mA) CE (sat) C B C
Otros transistores... 2SA1803O, 2SA1803R, 2SA1804, 2SA1804O, 2SA1804R, 2SA1805, 2SA1805O, 2SA1805R, 9014, 2SA181, 2SA1810, 2SA1810B, 2SA1810C, 2SA1811, 2SA1815, 2SA1815-3, 2SA1815-4
Parámetros del transistor bipolar y su interrelación.
History: 2SA1013R
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