2SA1810B . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

2SA1810Silicon PNP EpitaxialApplicationHigh frequency amplifierFeatures Excellent high frequency characteristicsfT = 300 MHz typ High voltage and low output capacitanceVCEO = 200 V, Cob = 5.0 pF typ Suitable for wide band video amplifierOutlineTO-126 MOD1. Emitter2. Collector3. Base1232SA1810Absolute Maximum Ratings (Ta = 25C)Item Symbol Ra

Ordering number:EN3973PNP Epitaxial Planar Silicon Transistor2SA1814Low-Frequency General-Purpose AmplifierDriver, Muting Circuit ApplicationsFeatures Package Dimensions Very small-sized package permitting 2SA1814-unit:mmapplied sets to be made smaller and slimmer.2018B Adoption of FBET process.[2SA1814] High DC current gain (hFE=500 to 1200). Low collector

Ordering number:EN4625PNP Epitaxial Planar Silicon Transistor2SA1815FM, RF, MIX, IF Amplifier, High-FrequencyGeneral-Purpose Amplifier ApplicationsFeatures Package Dimensions High power gain : PG=25dB (f=100MHz).unit:mm High cutoff frequency ; fT=750MHz typ.2018A Low collector-to-emitter saturation voltage.[2SA1815] Complementary pair with the 2SC4432.C : C

Ordering number:EN3972PNP Epitaxial Planar Silicon Transistor2SA1813Low-Frequency General-Purpose AmplifierDriver, Muting Circuit ApplicationsFeatures Package Dimensions Very small-sized package permitting 2SA1813-unit:mmapplied sets to be made smaller and slimmer.2059A Adoption of FBET process.[2SA1813] High DC current gain (hFE=500 to 1200). Low collector

2SA1812 / 2SA1727 / 2SA1776TransistorsHigh-voltage Switching Transistor( 400V, 0.5A)2SA1812 / 2SA1727 / 2SA1776 Features1) High breakdown voltage, BVCEO= 400V.2) Low saturation voltage, typically VCE (sat) = 0.3V at IC / IB = 100mA / 10mA.3) High switching speed, typically tf : 1 s at IC = 100mA.4) Wide SOA (safe operating area). Absolute maximum ratings (Ta=25C)Paramete

Transistors 2SA1812 / 2SA1727 / 2SA1776(96-609-A313)320

Transistor2SA1816(Tentative)Silicon PNP epitaxial planer typeFor low-frequency high breakdown voltage amplificationUnit: mm4.0 0.2FeaturesHigh collector to emitter voltage VCEO.Absolute Maximum Ratings (Ta=25C)markingParameter Symbol Ratings Unit1 2 3Collector to base voltage VCBO 150 VCollector to emitter voltage VCEO 150 VEmitter to base voltage VEBO 5

Transistor2SA1816(Tentative)Silicon PNP epitaxial planer typeFor low-frequency high breakdown voltage amplificationUnit: mm4.0 0.2FeaturesHigh collector to emitter voltage VCEO.Absolute Maximum Ratings (Ta=25C)markingParameter Symbol Ratings Unit1 2 3Collector to base voltage VCBO 150 VCollector to emitter voltage VCEO 150 VEmitter to base voltage VEBO 5

SMD Type TransistorsPNP Transistors2SA18121.70 0.1 Features High breakdown voltage, BVCEO=-400V. High switching speed, typically tf :1us at IC =-100mA.0.42 0.10.46 0.1 High-voltage Switching Transistor1.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -400 Collector - Emitter V

SMD Type TransistorsPNP Transistors2SA1815SOT-23Unit: mm2.9+0.1-0.1+0.10.4 -0.1 Features 3 High power gain : PG=25dB (f=100MHz). High cutoff frequency ; fT=750MHz typ. Low collector-to-emitter saturation voltage. 1 2+0.1+0.050.95 -0.1 0.1 -0.01 Complementary pair with the 2SC4432.1.9+0.1-0.11.Base2.Emitter3.collector Absolute Max

SMD Type TransistorsPNP Transistors2SA1813 Features High DC current gain (hFE=500 to 1200). Low collector-to-emitter saturation voltage High VEBO1 Base2 Emitter3 Colletor Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -30 Collector - Emitter Voltage VCEO -25 V Emitter - Base Voltage VEBO -15 Collector