Биполярный транзистор 2SA1810B - описание производителя. Основные параметры. Даташиты.
Наименование производителя: 2SA1810B
Тип материала: Si
Полярность: PNP
Максимальная рассеиваемая мощность (Pc): 10 W
Макcимально допустимое напряжение коллектор-база (Ucb): 200 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 200 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
Макcимальный постоянный ток коллектора (Ic): 0.2 A
Предельная температура PN-перехода (Tj): 150 °C
Граничная частота коэффициента передачи тока (ft): 300 MHz
Ёмкость коллекторного перехода (Cc): 5 pf
Статический коэффициент передачи тока (hfe): 60
Корпус транзистора: TO126
2SA1810B Datasheet (PDF)
3.1. 2sa1810.pdf 
Size:32K _hitachi
2SA1810 Silicon PNP Epitaxial Application High frequency amplifier Features • Excellent high frequency characteristics fT = 300 MHz typ • High voltage and low output capacitance VCEO = –200 V, Cob = 5.0 pF typ • Suitable for wide band video amplifier Outline TO-126 MOD 1. Emitter 2. Collector 3. Base 1 2 3 2SA1810 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ra
4.1. 2sa1811.pdf Size:173K _toshiba
4.2. 2sa1814.pdf Size:84K _sanyo
Ordering number:EN3973 PNP Epitaxial Planar Silicon Transistor 2SA1814 Low-Frequency General-Purpose Amplifier Driver, Muting Circuit Applications Features Package Dimensions · Very small-sized package permitting 2SA1814- unit:mm applied sets to be made smaller and slimmer. 2018B · Adoption of FBET process. [2SA1814] · High DC current gain (hFE=500 to 1200). · Low collector
4.3. 2sa1815.pdf Size:70K _sanyo
Ordering number:EN4625 PNP Epitaxial Planar Silicon Transistor 2SA1815 FM, RF, MIX, IF Amplifier, High-Frequency General-Purpose Amplifier Applications Features Package Dimensions · High power gain : PG=25dB (f=100MHz). unit:mm · High cutoff frequency ; fT=750MHz typ. 2018A · Low collector-to-emitter saturation voltage. [2SA1815] · Complementary pair with the 2SC4432. C : C
4.4. 2sa1813.pdf Size:83K _sanyo
Ordering number:EN3972 PNP Epitaxial Planar Silicon Transistor 2SA1813 Low-Frequency General-Purpose Amplifier Driver, Muting Circuit Applications Features Package Dimensions · Very small-sized package permitting 2SA1813- unit:mm applied sets to be made smaller and slimmer. 2059A · Adoption of FBET process. [2SA1813] · High DC current gain (hFE=500 to 1200). · Low collector
4.5. 2sa1812 2sa1727 2sa1776.pdf Size:250K _rohm
2SA1812 / 2SA1727 / 2SA1776 Transistors High-voltage Switching Transistor ( 400V, 0.5A) 2SA1812 / 2SA1727 / 2SA1776 Features 1) High breakdown voltage, BVCEO= 400V. 2) Low saturation voltage, typically VCE (sat) = 0.3V at IC / IB = 100mA / 10mA. 3) High switching speed, typically tf : 1 s at IC = 100mA. 4) Wide SOA (safe operating area). Absolute maximum ratings (Ta=25°C) Paramete
4.6. 2sa1812.pdf Size:27K _rohm
Transistors 2SA1812 / 2SA1727 / 2SA1776 (96-609-A313) 320
4.7. 2sa1816 e.pdf Size:25K _panasonic
Transistor 2SA1816(Tentative) Silicon PNP epitaxial planer type For low-frequency high breakdown voltage amplification Unit: mm 4.0± 0.2 Features High collector to emitter voltage VCEO. Absolute Maximum Ratings (Ta=25˚C) marking Parameter Symbol Ratings Unit 1 2 3 Collector to base voltage VCBO –150 V Collector to emitter voltage VCEO –150 V Emitter to base voltage VEBO –5
4.8. 2sa1816.pdf Size:21K _panasonic
Transistor 2SA1816(Tentative) Silicon PNP epitaxial planer type For low-frequency high breakdown voltage amplification Unit: mm 4.0± 0.2 Features High collector to emitter voltage VCEO. Absolute Maximum Ratings (Ta=25˚C) marking Parameter Symbol Ratings Unit 1 2 3 Collector to base voltage VCBO –150 V Collector to emitter voltage VCEO –150 V Emitter to base voltage VEBO –5
4.9. 2sa1812.pdf Size:1133K _kexin
SMD Type Transistors PNP Transistors 2SA1812 1.70 0.1 ■ Features ● High breakdown voltage, BVCEO=-400V. ● High switching speed, typically tf :1us at IC =-100mA. 0.42 0.1 0.46 0.1 ●High-voltage Switching Transistor 1.Base 2.Collector 3.Emitter ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO -400 Collector - Emitter V
4.10. 2sa1815.pdf Size:903K _kexin
SMD Type Transistors PNP Transistors 2SA1815 SOT-23 Unit: mm 2.9+0.1 -0.1 +0.1 0.4 -0.1 ■ Features 3 ● High power gain : PG=25dB (f=100MHz). ● High cutoff frequency ; fT=750MHz typ. ● Low collector-to-emitter saturation voltage. 1 2 +0.1 +0.05 0.95 -0.1 0.1 -0.01 ● Complementary pair with the 2SC4432. 1.9+0.1 -0.1 1.Base 2.Emitter 3.collector ■ Absolute Max
4.11. 2sa1813.pdf Size:1036K _kexin
SMD Type Transistors PNP Transistors 2SA1813 ■ Features ● High DC current gain (hFE=500 to 1200). ● Low collector-to-emitter saturation voltage ● High VEBO 1 Base 2 Emitter 3 Colletor ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO -30 Collector - Emitter Voltage VCEO -25 V Emitter - Base Voltage VEBO -15 Collector
Другие транзисторы... 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , 2SA1806 , 2SA181 , 2SA1810 , 2N3053 , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 , 2SA1815-5 , 2SA182 , 2SA1822 .
