Биполярный транзистор 2SA1810B - описание производителя. Основные параметры. Даташиты.
Наименование производителя: 2SA1810B
Тип материала: Si
Полярность: PNP
Максимальная рассеиваемая мощность (Pc): 10 W
Макcимально допустимое напряжение коллектор-база (Ucb): 200 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 200 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
Макcимальный постоянный ток коллектора (Ic): 0.2 A
Предельная температура PN-перехода (Tj): 150 °C
Граничная частота коэффициента передачи тока (ft): 300 MHz
Ёмкость коллекторного перехода (Cc): 5 pf
Статический коэффициент передачи тока (hfe): 60
Корпус транзистора: TO126
2SA1810B Datasheet (PDF)
7.1. 2sa1810.pdf 
Size:32K _hitachi
2SA1810Silicon PNP EpitaxialApplicationHigh frequency amplifierFeatures Excellent high frequency characteristicsfT = 300 MHz typ High voltage and low output capacitanceVCEO = 200 V, Cob = 5.0 pF typ Suitable for wide band video amplifierOutlineTO-126 MOD1. Emitter2. Collector3. Base1232SA1810Absolute Maximum Ratings (Ta = 25C)Item Symbol Ra
8.1. 2sa1811.pdf Size:173K _toshiba
8.2. 2sa1814.pdf Size:84K _sanyo
Ordering number:EN3973PNP Epitaxial Planar Silicon Transistor2SA1814Low-Frequency General-Purpose AmplifierDriver, Muting Circuit ApplicationsFeatures Package Dimensions Very small-sized package permitting 2SA1814-unit:mmapplied sets to be made smaller and slimmer.2018B Adoption of FBET process.[2SA1814] High DC current gain (hFE=500 to 1200). Low collector
8.3. 2sa1815.pdf Size:70K _sanyo
Ordering number:EN4625PNP Epitaxial Planar Silicon Transistor2SA1815FM, RF, MIX, IF Amplifier, High-FrequencyGeneral-Purpose Amplifier ApplicationsFeatures Package Dimensions High power gain : PG=25dB (f=100MHz).unit:mm High cutoff frequency ; fT=750MHz typ.2018A Low collector-to-emitter saturation voltage.[2SA1815] Complementary pair with the 2SC4432.C : C
8.4. 2sa1813.pdf Size:83K _sanyo
Ordering number:EN3972PNP Epitaxial Planar Silicon Transistor2SA1813Low-Frequency General-Purpose AmplifierDriver, Muting Circuit ApplicationsFeatures Package Dimensions Very small-sized package permitting 2SA1813-unit:mmapplied sets to be made smaller and slimmer.2059A Adoption of FBET process.[2SA1813] High DC current gain (hFE=500 to 1200). Low collector
8.5. 2sa1812 2sa1727 2sa1776.pdf Size:250K _rohm
2SA1812 / 2SA1727 / 2SA1776TransistorsHigh-voltage Switching Transistor( 400V, 0.5A)2SA1812 / 2SA1727 / 2SA1776 Features1) High breakdown voltage, BVCEO= 400V.2) Low saturation voltage, typically VCE (sat) = 0.3V at IC / IB = 100mA / 10mA.3) High switching speed, typically tf : 1 s at IC = 100mA.4) Wide SOA (safe operating area). Absolute maximum ratings (Ta=25C)Paramete
8.6. 2sa1812.pdf Size:27K _rohm
Transistors 2SA1812 / 2SA1727 / 2SA1776(96-609-A313)320
8.7. 2sa1816 e.pdf Size:25K _panasonic
Transistor2SA1816(Tentative)Silicon PNP epitaxial planer typeFor low-frequency high breakdown voltage amplificationUnit: mm4.0 0.2FeaturesHigh collector to emitter voltage VCEO.Absolute Maximum Ratings (Ta=25C)markingParameter Symbol Ratings Unit1 2 3Collector to base voltage VCBO 150 VCollector to emitter voltage VCEO 150 VEmitter to base voltage VEBO 5
8.8. 2sa1816.pdf Size:21K _panasonic
Transistor2SA1816(Tentative)Silicon PNP epitaxial planer typeFor low-frequency high breakdown voltage amplificationUnit: mm4.0 0.2FeaturesHigh collector to emitter voltage VCEO.Absolute Maximum Ratings (Ta=25C)markingParameter Symbol Ratings Unit1 2 3Collector to base voltage VCBO 150 VCollector to emitter voltage VCEO 150 VEmitter to base voltage VEBO 5
8.9. 2sa1812.pdf Size:1133K _kexin
SMD Type TransistorsPNP Transistors2SA18121.70 0.1 Features High breakdown voltage, BVCEO=-400V. High switching speed, typically tf :1us at IC =-100mA.0.42 0.10.46 0.1 High-voltage Switching Transistor1.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -400 Collector - Emitter V
8.10. 2sa1815.pdf Size:903K _kexin
SMD Type TransistorsPNP Transistors2SA1815SOT-23Unit: mm2.9+0.1-0.1+0.10.4 -0.1 Features 3 High power gain : PG=25dB (f=100MHz). High cutoff frequency ; fT=750MHz typ. Low collector-to-emitter saturation voltage. 1 2+0.1+0.050.95 -0.1 0.1 -0.01 Complementary pair with the 2SC4432.1.9+0.1-0.11.Base2.Emitter3.collector Absolute Max
8.11. 2sa1813.pdf Size:1036K _kexin
SMD Type TransistorsPNP Transistors2SA1813 Features High DC current gain (hFE=500 to 1200). Low collector-to-emitter saturation voltage High VEBO1 Base2 Emitter3 Colletor Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -30 Collector - Emitter Voltage VCEO -25 V Emitter - Base Voltage VEBO -15 Collector
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