2SA1832 Todos los transistores

2SA1832 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1832 Audio Frequency General Purpose Amplifier Applications Unit mm High voltage and high current VCEO = -50 V, IC = -150 mA (max) Excellent hFE linearity hFE (IC = -0.1 mA)/ hFE (IC = -2 mA) = 0.95 (typ.) High hFE hFE = 70 400 Complementary to 2SC4738 Small package Absolute Maximum

2SA1832 -0.15A , -50V PNP Silicon Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-523 FEATURES High Voltage and High Current A Excellent hFE Linearity M Complementary to 2SC4738 3 3 Top View C B CLASSIFICATION OF hFE 1 1 2 L 2 Product-Rank 2SA1832-Y 2SA1832-GR K E

2SA1832 PNP TRANSISTOR 3 P b Lead(Pb)-Free 1 2 FEATURES * High voltage and high current * Excellent hFE linearity SOT-523(SC-75) * Complementary to 2SC4738 MAXIMUM RATINGS (TA=25 unless otherwise noted) Parameter Symbol Value Units VCBO Collector-Base Voltage -50 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -5 V IC Collector Current Continuous

SMD Type Transistors PNP Transistors 2SA1832 SOT-523 U nit m m +0. 1 1.6 -0. 1 +0.1 1.0 -0.1 +0.05 0.2 -0.05 0.15 0.05 2 1 Features High voltage and high current Excellent hFE linearity 3 Complementary to 2SC4738 0.3 0.05 +0.1 0.5-0.1 1. Base 2. Emitter 3. Collecter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector -

2SA1832FT TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1832FT Audio frequency General Purpose Amplifier Applications Unit mm High voltage VCEO = -50 V High current I = -150 mA (max) C High h h = 120 to 400 FE FE Excellent h linearity FE h (I = -0.1 mA)/h (I = -2 mA) = 0.95 (typ.) FE C FE C Complementary to 2SC4738F Maximum

2SA1832F TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1832F Audio Frequency General Purpose Amplifier Applications Unit mm High voltage and high current VCEO = -50 V, IC = -150 mA (max) Excellent h linearity h (I = -0.1 mA)/h (I = -2 mA) FE FE C FE C = 0.95 (typ.) High hFE hFE = 120 400 Complementary to 2SC4738F Small package Ma

2SA1832 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1832 Audio Frequency General Purpose Amplifier Applications Unit mm High voltage and high current VCEO = -50 V, IC = -150 mA (max) Excellent hFE linearity hFE (IC = -0.1 mA)/ hFE (IC = -2 mA) = 0.95 (typ.) High hFE hFE = 70 400 Complementary to 2SC4738 Small package Absolute Maximum

MCC 2SA1832-Y Micro Commercial Components TM 20736 Marilla Street Chatsworth Micro Commercial Components 2SA1832-GR CA 91311 Phone (818) 701-4933 Fax (818) 701-4939 Features Lead Free Finish/RoHS Compliant ("P" Suffix designates PNP Silicon RoHS Compliant. See ordering information) Small Package Epitaxial Transistor Mounting any position Epoxy meets UL 94 V-

MCC 2SA1832-Y Micro Commercial Components TM 20736 Marilla Street Chatsworth Micro Commercial Components 2SA1832-GR CA 91311 Phone (818) 701-4933 Fax (818) 701-4939 Features Lead Free Finish/RoHS Compliant ("P" Suffix designates PNP Silicon RoHS Compliant. See ordering information) Small Package Epitaxial Transistor Mounting any position Epoxy meets UL 94 V-