2SA1832 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SA1832
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.15 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Collector Current |Ic max|: 0.15 A
Max. Operating Junction Temperature (Tj): 135 °C
Transition Frequency (ft): 80 MHz
Forward Current Transfer Ratio (hFE), MIN: 240
Noise Figure, dB: -
Package: TO236
2SA1832 Transistor Equivalent Substitute - Cross-Reference Search
2SA1832 Datasheet (PDF)
2sa1832.pdf
2SA1832 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1832 Audio Frequency General Purpose Amplifier Applications Unit: mmHigh voltage and high current: VCEO = -50 V, IC = -150 mA (max) Excellent hFE linearity: hFE (IC = -0.1 mA)/ hFE (IC = -2 mA) = 0.95 (typ.) High hFE: hFE = 70~400 Complementary to 2SC4738 Small package Absolute Maximum
2sa1832.pdf
2SA1832 -0.15A , -50V PNP Silicon Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-523FEATURES High Voltage and High Current A Excellent hFE Linearity M Complementary to 2SC4738 33Top View C BCLASSIFICATION OF hFE 11 2L 2Product-Rank 2SA1832-Y 2SA1832-GR KE
2sa1832.pdf
2SA1832PNP TRANSISTOR3P b Lead(Pb)-Free12FEATURES:* High voltage and high current* Excellent hFE linearitySOT-523(SC-75)* Complementary to 2SC4738 MAXIMUM RATINGS (TA=25 unless otherwise noted) Parameter Symbol Value Units VCBOCollector-Base Voltage -50 V VCEOCollector-Emitter Voltage -50 V VEBOEmitter-Base Voltage -5 V ICCollector Current Continuous
2sa1832.pdf
SMD Type TransistorsPNP Transistors2SA1832SOT-523 U nit: m m+0.11.6 -0.1+0.11.0 -0.1+0.050.2 -0.05 0.150.052 1 Features High voltage and high current Excellent hFE linearity3 Complementary to 2SC47380.30.05+0.10.5-0.11. Base2. Emitter3. Collecter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector -
2sa1832ft.pdf
2SA1832FT TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1832FT Audio frequency General Purpose Amplifier Applications Unit: mm High voltage: VCEO = -50 V High current: I = -150 mA (max) C High h : h = 120 to 400 FE FE Excellent h linearity FE: h (I = -0.1 mA)/h (I = -2 mA) = 0.95 (typ.) FE C FE C Complementary to 2SC4738F Maximum
2sa1832f.pdf
2SA1832F TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1832F Audio Frequency General Purpose Amplifier Applications Unit: mm High voltage and high current: VCEO = -50 V, IC = -150 mA (max) Excellent h linearity: h (I = -0.1 mA)/h (I = -2 mA) FE FE C FE C = 0.95 (typ.) High hFE: hFE = 120~400 Complementary to 2SC4738F Small package Ma
2sa1832o 2sa1832y 2sa1832gr.pdf
2SA1832 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1832 Audio Frequency General Purpose Amplifier Applications Unit: mmHigh voltage and high current: VCEO = -50 V, IC = -150 mA (max) Excellent hFE linearity: hFE (IC = -0.1 mA)/ hFE (IC = -2 mA) = 0.95 (typ.) High hFE: hFE = 70~400 Complementary to 2SC4738 Small package Absolute Maximum
2sa1832-gr.pdf
MCC2SA1832-YMicro Commercial ComponentsTM20736 Marilla Street ChatsworthMicro Commercial Components2SA1832-GRCA 91311Phone: (818) 701-4933Fax: (818) 701-4939Features Lead Free Finish/RoHS Compliant ("P" Suffix designates PNP SiliconRoHS Compliant. See ordering information) Small Package Epitaxial Transistor Mounting:any position Epoxy meets UL 94 V-
2sa1832-y.pdf
MCC2SA1832-YMicro Commercial ComponentsTM20736 Marilla Street ChatsworthMicro Commercial Components2SA1832-GRCA 91311Phone: (818) 701-4933Fax: (818) 701-4939Features Lead Free Finish/RoHS Compliant ("P" Suffix designates PNP SiliconRoHS Compliant. See ordering information) Small Package Epitaxial Transistor Mounting:any position Epoxy meets UL 94 V-
Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D209L , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
