2SA1857-3 Datasheet. Equivalente

 7.1. Size:31K  sanyo
 2sa1857.pdf

Ordering number EN4644 PNP Epitaxial Planar Silicon Transistor 2SA1857 FM, RF, MIX, IF Amplifier High-Frequency General-Purpose Amplifier Applications Features Package Dimensions High power gain PG=25dB typ (f=100MHz). unit mm High cutoff frequency fT=750MHz typ. 2059A Low collector-to-emitter saturation voltage. [2SA1857] Complementary pair with the 2SC4400. 1

 8.1. Size:26K  sanyo
 2sa1852 2sc4826.pdf

Ordering number ENN5495A 2SA1852 / 2SC4826 PNP / NPN Epitaxial Planar Silicon Transistors 2SA1852 / 2SC4826 High Definition CRT Display Video Output Applications Applications Package Dimensions High definition CRT display video output, unit mm wide-band amplifer. 2084B [2SA1852 / 2SC4826] Features 4.5 1.9 2.6 10.5 1.2 1.4 Adoption of FBET process. High fT fT=

 8.2. Size:127K  sanyo
 2sa1855.pdf

 8.3. Size:41K  sanyo
 2sa1854.pdf

Ordering number EN4133 PNP Epitaxial Planar Silicon Transistor 2SA1854 20V/5A Switching Applications Applications Package Dimensions Strobes, power supplies, relay drivers, lamp drivers. unit mm 2084B Features [2SA1854] Adoption of FBET and MBIT processes. Large allowable collector dissipation. Low saturation voltage. Large current capacity. Fast switching sp

 8.4. Size:118K  sanyo
 2sa1850.pdf

 8.5. Size:101K  sanyo
 2sa1853.pdf

 8.6. Size:36K  panasonic
 2sa1858.pdf

Transistor 2SA1858 Silicon PNP epitaxial planer type For general amplification Unit mm 5.0 0.2 4.0 0.2 Features High collector to emitter voltage VCEO. 0.7 0.1 Absolute Maximum Ratings (Ta=25 C) Parameter Symbol Ratings Unit Collector to base voltage VCBO 300 V +0.15 +0.15 0.45 0.1 0.45 0.1 Collector to emitter voltage VCEO 300 V 1.27 1.27 Emitter to base vol

 8.7. Size:40K  panasonic
 2sa1858 e.pdf

Transistor 2SA1858 Silicon PNP epitaxial planer type For general amplification Unit mm 5.0 0.2 4.0 0.2 Features High collector to emitter voltage VCEO. 0.7 0.1 Absolute Maximum Ratings (Ta=25 C) Parameter Symbol Ratings Unit Collector to base voltage VCBO 300 V +0.15 +0.15 0.45 0.1 0.45 0.1 Collector to emitter voltage VCEO 300 V 1.27 1.27 Emitter to base vol

 8.8. Size:184K  jmnic
 2sa1859 2sa1859a.pdf

JMnic Product Specification Silicon PNP Power Transistors 2SA1859 2SA1859A DESCRIPTION With TO-220F package Complement to type 2SC4883/4883A APPLICATIONS For audio output driver and TV velocity-modulation applications PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-220F) and symbol 3 Emitter Absolute maximum ratings (Ta=25 ) SYMBOL PARA

 8.9. Size:27K  sanken-ele
 2sa1859.pdf

2SA1859/1859A Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC4883/A) Application Audio Output Driver and TV Velocity-modulation (Ta=25 C) Absolute maximum ratings (Ta=25 C) Electrical Characteristics External Dimensions FM20(TO220F) Ratings Ratings Symbol Unit Symbol Conditions Unit 2SA1859 2SA1859A 2SA1859 2SA1859A 0.2 4.2 0.2 10.1 c0.5 2.8 VCBO 15

 8.10. Size:142K  inchange semiconductor
 2sa1859 2sa1859a.pdf

 8.11. Size:210K  inchange semiconductor
 2sa1859.pdf

isc Silicon PNP Power Transistor 2SA1859 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -150V(Min) (BR)CEO Complement to Type 2SC4883 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio output driver and TV velocity-modulation applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT

 8.12. Size:210K  inchange semiconductor
 2sa1859a.pdf

isc Silicon PNP Power Transistor 2SA1859A DESCRIPTION Collector-Emitter Breakdown Voltage- V = -180V(Min) (BR)CEO Complement to Type 2SC4883A Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio output driver and TV velocity-modulation applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UN