2SA191 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SA191 📄📄
Material: Ge
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.08 W
Tensión colector-base (Vcb): 20 V
Corriente del colector DC máxima (Ic): 0.015 A
Temperatura operativa máxima (Tj): 80 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 8 MHz
Ganancia de corriente contínua (hFE): 15
Encapsulados: TO44
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2SA191 datasheet
2sa1937.pdf
2SA1937 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1937 High Voltage Switching Applications Unit mm High voltage VCEO = -600 V Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit Collector-base voltage VCBO -600 V Collector-emitter voltage VCEO -600 V Emitter-base voltage VEBO -7 V DC IC -0.5 Collector current A Pulse ICP -1 Base current IB
2sa1955fv.pdf
2SA1955FV TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1955FV General Purpose Amplifier Applications Unit mm Switching and Muting Switch Application 1.2 0.05 0.8 0.05 Low saturation voltage VCE (sat) (1) = -15 mV (typ.) @IC = -10 mA/IB = -0.5 mA Large collector current IC = -400 mA (max) 1 2 3 Absolute Maximum Ratings (Ta = 25 C) Char
2sa1931.pdf
2SA1931 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT PROCESS) 2SA1931 High-Current Switching Applications Unit mm Low saturation voltage VCE (sat) = -0.4 V (max) High-speed switching time tstg = 1.0 s (typ.) Complementary to 2SC4881 Absolute Maximum Ratings (Tc = 25 C) Characteristic Symbol Rating Unit Collector-base voltage VCBO -60 V Collector-emitt
2sa1930.pdf
2SA1930 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA1930 Power Amplifier Applications Unit mm Driver Stage Amplifier Applications High transition frequency fT = 200 MHz (typ.) Complementary to 2SC5171 Absolute Maximum Ratings (Tc = 25 C) Characteristics Symbol Rating Unit Collector-base voltage VCBO -180 V Collector-emitter voltage VCEO -180 V Emitter-base v
2sa1943n.pdf
2SA1943N Bipolar Transistors Silicon PNP Triple-Diffused Type 2SA1943N 2SA1943N 2SA1943N 2SA1943N 1. Applications 1. Applications 1. Applications 1. Applications Power Amplifiers 2. Features 2. Features 2. Features 2. Features (1) High collector voltage VCEO = -230 V (min) (2) Complementary to 2SC5200N (3) Recommended for 100-W high-fidelity audio frequency amplifier outpu
2sa1941r 2sa1941o.pdf
2SA1941 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1941 Power Amplifier Applications Unit mm High breakdown voltage VCEO = -140 V (min) Complementary to 2SC5198 Recommended for 70-W high-fidelity audio frequency amplifier output stage. Absolute Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit Collector-base voltage VCBO -140 V Colle
2sa1943.pdf
2SA1943 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1943 Power Amplifier Applications Unit mm High collector voltage VCEO = -230 V (min) Complementary to 2SC5200 Recommended for 100-W high-fidelity audio frequency amplifier output stage. Absolute Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit Collector-base voltage VCBO -230 V Coll
2sa1953.pdf
2SA1953 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1953 General Purpose Amplifier Applications Unit mm Switching and Muting Switch Application Low saturation voltage VCE (sat) (1) = -15 mV (typ.) @I = -10 mA/I = -0.5 mA C B Large collector current I = -500 mA (max) C Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit C
2sa1955.pdf
2SA1955 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1955 General Purpose Amplifier Applications Unit mm Switching and Muting Switch Application Low saturation voltage VCE (sat) (1) = -15 mV (typ.) @I = -10 mA/I = -0.5 mA C B Large collector current I = -400 mA (max) C Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit C
2sa1962.pdf
2SA1962 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1962 Power Amplifier Applications Unit mm High breakdown voltage VCEO = -230 V (min) Complementary to 2SC5242 Recommended for 80-W high-fidelity audio frequency amplifier output stage. Absolute Maximum Ratings (Tc = 25 C) Characteristics Symbol Rating Unit Collector-base voltage VCBO -230 V Colle
2sa1941.pdf
2SA1941 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1941 Power Amplifier Applications Unit mm High breakdown voltage VCEO = -140 V (min) Complementary to 2SC5198 Recommended for 70-W high-fidelity audio frequency amplifier output stage. Absolute Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit Collector-base voltage VCBO -140 V Colle
2sa1954.pdf
2SA1954 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1954 General Purpose Amplifier Applications Unit mm Switching and Muting Switch Application Low saturation voltage VCE (sat) (1) = -15 mV (typ.) @I = -10 mA/I = -0.5 mA C B Large collector current I = -500 mA (max) C Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit C
2sa1923.pdf
2SA1923 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1923 High Voltage Switching Applications Unit mm High voltage VCEO = -400 V Low saturation voltage V = -1 V (max) CE (sat) (I = -100 mA, I = -10 mA) C B Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit Collector-base voltage VCBO -400 V Collector-emitter voltage VCEO -400 V Emitter-b
2sa1969.pdf
Ordering number 5098 PNP Epitaxial Planar Silicon Transistor 2SA1969 High-Frequency Medium-Output Amplifier,Medium- Current Ultrahigh-Speed Switching Applications Features Package Dimensions High fT (fT=1.7GHz typ). unit mm Large current capacity (IC= 400mA). 2038A [2SA1969] 1 Base 2 Collector 3 Emitter SANYO PCP (Bottom view) Specifications Absolute Maximum R
2sa1967.pdf
Ordering number 5182 NPN Triple Diffused Planar Silicon Transistor 2SA1967 High-Voltage Amplifier, High-Voltage Switching Applications Features Package Dimensions High breakdown voltage (VCEO min= 900V). unit mm Small Cob (Cob typ=2.2pF). 2010C High reliability (Adoption of HVP process). [2SA1967] JEDEC TO-220AB 1 Base EIAJ SC46 2 Collector Specifications 3
2sa1965.pdf
Ordering number 5031 PNP Epitaxial Planar Silicon Transistor 2SA1965 Muting Circuit Applications Features Package Dimensions Very small-sized package permitting 2SA1965- unit mm applied sets to be made small and slim. 2106A Small output capacitance. [2SA1965] Low collectot-to-emitter saturation voltage. Small ON resistance. 1 Base 2 Emitter 3 Collector SANY
2sa1963.pdf
Ordering number 5230 PNP Epitaxial Planar Silicon Transistor 2SA1963 High-Frequecy Low-Noise Amplifier, Ultrahigh-Speed Switching Applications Features Package Dimensions Low noise NF=1.5dB typ (f=1GHz). unit mm High gain S2le 2=9dB typ (f=1GHz). 2018B High cutoff frequency fT=5GHz typ. [2SA1963] 1 Base 2 Emitter 3 Collector Specifications SANYO CP
2sa1968ls.pdf
Ordering number ENN5183B 2SA1968LS PNP Triple Diffused Planar Silicon Transistor 2SA1968LS High-Voltage Amplifier, High-Voltage Switching Applications Features Package Dimensions High breakdown voltage(VCEO min=--900V). unit mm Small Cob(Cob typ=2.2pF). 2079D High reliability(Adoption of HVP process). [2SA1968LS] Package of full isolation type. 10.0 4.5 3.2
2sa1973 2sc5310.pdf
Ordering number ENN5613 PNP/NPN Epitaxial Planar Silicon Transistors 2SA1973/2SC5310 DC/DC Converter Applications Features Package Dimensions Adoption of FBET, MBIT processes. unit mm Large current capacitance. 2018B Low collector-to-emitter saturation voltage. [2SA1973/2SC5310] High-speed switching. 0.4 Ultrasmall package facilitates miniaturization in end 0.16
2sa1968.pdf
Ordering number 5183 NPN Triple Diffused Planar Silicon Transistor 2SA1968 High-Voltage Amplifier, High-Voltage Switching Applications Features Package Dimensions High breakdown voltage (VCEO min= 900V). unit mm Small Cob (Cob typ=2.2pF). 2079B High reliability (Adoption of HVP process). [2SA1968] Package of full isolation type. 1 Base 2 Collector 3 Emitte
2sa1962 fja4213.pdf
January 2009 2SA1962/FJA4213 PNP Epitaxial Silicon Transistor Applications High-Fidelity Audio Output Amplifier General Purpose Power Amplifier Features High Current Capability IC = -17A TO-3P High Power Dissipation 130watts 1 High Frequency 30MHz. 1.Base 2.Collector 3.Emitter High Voltage VCEO= -250V Wide S.O.A for reliable operation. Excel
2sa1943 fjl4215.pdf
January 2009 2SA1943/FJL4215 PNP Epitaxial Silicon Transistor Applications High-Fidelity Audio Output Amplifier General Purpose Power Amplifier Features High Current Capability IC = -17A. High Power Dissipation 150watts. TO-264 1 High Frequency 30MHz. 1.Base 2.Collector 3.Emitter High Voltage VCEO= -250V Wide S.O.A for reliable operation. Ex
2sa1978.pdf
DATA SHEET PRELIMINARY DATA SHEET Silicon Transistor 2SA1978 PNP EPITAXIAL SILICON TRANSISTOR MICROWAVE AMPLIFIER FEATURES PACKAGE DIMENSIONS High f (in milimeters) T _ 2.8+0.2 f = 5.5 GHz TYP. T +0.1 S 2 = 10.0 dB TYP. @f = 1.0 GHz, V = -10 V, I = -15 mA 1.5 0.65 0.15 21e CE C High speed switching characteristics Equivalent NPN transistor is the 2SC2
2sa1977.pdf
DATA SHEET PRELIMINARY DATA SHEET Silicon Transistor 2SA1977 PNP EPITAXIAL SILICON TRANSISTOR MICROWAVE AMPLIFIER FEATURES PACKAGE DIMENSION (in millimeters) _ 2.8+0.2 High f T +0.1 f = 8.5 GHz TYP. T 1.5 0.65 0.15 High gain S 2 = 12.0 dB TYP. @f = 1.0 GHz, V = -8 V, I = -20 mA 21e CE C High-speed switching characterstics 2 Equivalent NPN transistor
2sa1988.pdf
DATA SHEET Silicon Power Transistor 2SA1988 PNP SILICON TRANSISTOR POWER AMPLIFIER INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS The 2SA1988 is PNP Silicon Power Transistor that designed for audio frequency power amplifier. 4.7 MAX. 15.7 MAX. 3.2 0.2 1.5 FEATURES 4 High Voltage VCEO = -200 V DC Current Gain hFE = 70 to 200 TO-3P Package 1 2 3 ORDERING INFORMAT
2sa1964 2sc5248.pdf
2SA1964 Transistors Transistors 2SC5248 (SPEC-A315) (SPEC-C315) 282
2sa1900.pdf
2SA1900 Transistors Medium power transistor (-50V, -1A) 2SA1900 Dimensions (Unit mm) Features 1) Low saturation voltage, typically VCE(sat) = -0.15V at IC / MPT3 IB = -500mA / -50mA 2) PC=2W (on 40 40 0.7mm ceramic board) 3) Complements the 2SC5053 (1)Base (2)Collector (3)Emitter Absolute maximum ratings (Ta=25 C) Parameter Symbol Limits Unit VCBO -60 V Col
2sa1952.pdf
2SA1952 Transistors High-speed Switching Transistor (-60V, -5A) 2SA1952 Features External dimensions (Units mm) 1) High speed switching. (tf Typ. 0.15 s at IC = -3A) 2SA1952 2) Low VCE(sat). (Typ. -0.2V at IC/IB = -3/-0.15A) 5.5 1.5 3) Wide SOA. (safe operating area) 4) Complements the 2SC5103. 0.9 C0.5 Absolute maximum ratings (Ta = 25 C) Parameter Symbol Limit
2sa1900 2sc5053.pdf
2SA1900 Transistors Transistors 2SC5053 (96-115-B352) (96-196-D352) 297 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference onl
2sa1980-o.pdf
2SA1980-O MCC Micro Commercial Components TM 2SA1980-Y 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 2SA1980-G Phone (818) 701-4933 Fax (818) 701-4939 2SA1980-L Features Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) Low Collector Saturation Voltage V =0.3V(Max.) CE(sat) Low Output Capacitance
2sa1980-y.pdf
2SA1980-O MCC Micro Commercial Components TM 2SA1980-Y 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 2SA1980-G Phone (818) 701-4933 Fax (818) 701-4939 2SA1980-L Features Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) Low Collector Saturation Voltage V =0.3V(Max.) CE(sat) Low Output Capacitance
2sa1980-l.pdf
2SA1980-O MCC Micro Commercial Components TM 2SA1980-Y 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 2SA1980-G Phone (818) 701-4933 Fax (818) 701-4939 2SA1980-L Features Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) Low Collector Saturation Voltage V =0.3V(Max.) CE(sat) Low Output Capacitance
2sa1980-g.pdf
2SA1980-O MCC Micro Commercial Components TM 2SA1980-Y 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 2SA1980-G Phone (818) 701-4933 Fax (818) 701-4939 2SA1980-L Features Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) Low Collector Saturation Voltage V =0.3V(Max.) CE(sat) Low Output Capacitance
2sa1962rtu 2sa1962otu fja4213rtu fja4213otu.pdf
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
2sa1943rtu 2sa1943otu fjl4215rtu fjl4215otu.pdf
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
2sa1982 e.pdf
Transistor 2SA1982 Silicon PNP epitaxial planer type For low-frequency high breakdown voltage amplification Unit mm Complementary to 2SC5346 2.5 0.1 1.05 6.9 0.1 0.05 (1.45) 0.7 4.0 0.8 Features Satisfactory foward current transfer ratio hFE collector current IC characteristics. 0.65 max. High collector to emitter voltage VCEO. Small collector output capacitance Cob. Mak
2sa1982.pdf
Transistor 2SA1982 Silicon PNP epitaxial planer type For low-frequency high breakdown voltage amplification Unit mm Complementary to 2SC5346 2.5 0.1 1.05 6.9 0.1 0.05 (1.45) 0.7 4.0 0.8 Features Satisfactory foward current transfer ratio hFE collector current IC characteristics. 0.65 max. High collector to emitter voltage VCEO. Small collector output capacitance Cob. Mak
2sa1961.pdf
Transistor 2SA1961 Silicon PNP epitaxial planer type For general amplification Unit mm Complementary to 2SC5419 2.5 0.1 1.05 6.9 0.1 0.05 (1.45) 0.7 4.0 0.8 Features High collector to emitter voltage VCEO. 0.65 max. Absolute Maximum Ratings (Ta=25 C) +0.1 0.45 0.05 Parameter Symbol Ratings Unit 2.5 0.5 2.5 0.5 Collector to base voltage VCBO 200 V 1 2 3 Col
2sa1961 e.pdf
Transistor 2SA1961 Silicon PNP epitaxial planer type For general amplification Unit mm Complementary to 2SC5419 2.5 0.1 1.05 6.9 0.1 0.05 (1.45) 0.7 4.0 0.8 Features High collector to emitter voltage VCEO. 0.65 max. Absolute Maximum Ratings (Ta=25 C) +0.1 0.45 0.05 Parameter Symbol Ratings Unit 2.5 0.5 2.5 0.5 Collector to base voltage VCBO 200 V 1 2 3 Col
2sa1943.pdf
UNISONIC TECHNOLOGIES CO., LTD 2SA1943 PNP SILICON TRANSISTOR POWER AMPLIFIER APPLICATIONS FEATURES * Complementary to UTC 2SC5200 * Recommended for 100W High Fidelity Audio Frequency Amplifier Output Stage 1 TO-3PL ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 2SA1943L-x-T3L-T 2SA1943G-x-T3L-T TO-3PL B C E Tube 2SA
2sa1980sf.pdf
2SA1980SF PNP Silicon Transistor PIN Connection Description General small signal amplifier 3 Features Low collector saturation voltage 1 VCE(sat)=-0.3V(Max.) 2 Low output capacitance Cob=4pF(Typ.) SOT-23F Complementary pair with 2SC5343SF Ordering Information Type NO. Marking Package Code CA 2SA1980SF SOT-23F
2sa1979uf.pdf
2SA1979UF PNP Silicon Transistor Description PIN Connection Medium power amplifier 3 Features Large collector current IC=-500mA 1 Suitable for low-Voltage operation 2 because of its low saturation voltage Complementary pair with 2SC5342UF SOT-323F Ordering Information Type NO. Marking Package Code A 2SA1979UF SOT-323F Dev
2sa1980uf.pdf
2SA1980UF PNP Silicon Transistor PIN Connection Description General small signal amplifier 3 Features 1 Low collector saturation voltage 2 VCE(sat)=-0.3V(Max.) Low output capacitance Cob=4pF(Typ.) SOT-323F Complementary pair with 2SC5343UF Ordering Information Type NO. Marking Package Code C 2SA1980UF SOT-323F Device Cod
2sa1980n.pdf
2SA1980N Semiconductor Semiconductor PNP Silicon Transistor Description General small signal amplifier Features Low collector saturation voltage VCE(sat)=-0.3V(Max.) Low output capacitance Cob=4pF(Typ.) Complementary pair with 2SC5343N Ordering Information Type NO. Marking Package Code 2SA1980N A1980 TO-92N Outline Dimensions unit mm 4.20 4
2sa1979u.pdf
2SA1979U PNP Silicon Transistor Description PIN Connection Medium power amplifier Features 3 Large collector current ICMax=-500mA Suitable for low-Voltage operation 1 2 because of its low saturation voltage Complementary pair with 2SC5342U SOT-323 Ordering Information Type NO. Marking Package Code A 2SA1979U SOT-323
2sa1980u.pdf
2SA1980U PNP Silicon Transistor Description PIN Connection General small signal amplifier Features Low collector saturation voltage 3 VCE(sat)=-0.3V(Max.) 2 1 Low output capacitance Cob=4pF(Typ.) Complementary pair with 2SC5343U SOT-323 Ordering Information Type NO. Marking Package Code C 2SA1980U SOT-323 Dev
2sa1981s.pdf
2SA1981S PNP Silicon Transistor Description C Audio power amplifier application Features B C High h h =100 320 FE FE B Complementary pair with 2SC5344S E E Ordering Information Part Number Marking Package SOT-23 EA 2SA1981S SOT-23 * Device Code hFE Rank Year & Week Code Factory Management Code Ab
2sa1979n.pdf
2SA1979N Semiconductor Semiconductor PNP Silicon Transistor Description Medium power amplifier Features Large collector current IC = -500mA Low collector saturation voltage enabling low-voltage operation VCE(sat) = -0.25 Max. Complementary pair with 2SC5342N Ordering Information Type NO. Marking Package Code 2SA1979N A1979 TO-92N Outline Dimensio
2sa1980.pdf
2SA1980 PNP Silicon Transistor PIN Connection Description General small signal amplifier E Features B Low collector saturation voltage VCE(sat)=-0.3V(Max.) Low output capacitance Cob=4pF(Typ.) C Complementary pair with 2SC5343 TO-92 Ordering Information Type NO. Marking Package Code 2SA1980 A1980 TO-92 Absolute Maximum Ratings (Ta=25 C) C
2sa1980ef.pdf
2SA1980EF PNP Silicon Transistor Description PIN Connection General small signal amplifier Features 3 Low collector saturation voltage VCE(sat)=-0.3V(Max.) Low output capacitance Cob=4pF(Typ.) 1 Complementary pair with 2SC5343EF 2 SOT-523F Ordering Information Type NO. Marking Package Code A 2SA1980EF SOT-523F Device C
2sa1980s.pdf
2SA1980S PNP Silicon Transistor Description C General small signal amplifier Features B C Low collector saturation voltage V = 0.3V(Max.) CE(sat) B Low output capacitance C = 4pF(Typ.) ob E Complementary pair with 2SC5343S E Ordering Information SOT-23 Part Number Marking Package CA 2SA1980S SOT-23 *
2sa1979m.pdf
2SA1979M Semiconductor Semiconductor PNP Silicon Transistor Description Medium power amplifier Features Large collector current ICMax=-500mA Suitable for low-Voltage operation because of its low saturation voltage Complementary pair with 2SC5342M Ordering Information Type NO. Marking Package Code 2SA1979M 1979 TO-92M Outline Dimensions unit mm
2sa1979.pdf
2SA1979 Semiconductor Semiconductor PNP Silicon Transistor Description PIN Connection Medium power amplifier E Features B Large collector current ICMax=-500mA Suitable for low-Voltage operation because of its low saturation voltage C Complementary pair with 2SC5342 TO-92 Ordering Information Type NO. Marking Package Code 2SA1979 A1979 TO-92
2sa1981n.pdf
2SA1981N Semiconductor Semiconductor PNP Silicon Transistor Description Audio power amplifier application Features High hFE hFE=100 320 Complementary pair with 2SC5344N Ordering Information Type NO. Marking Package Code 2SA1981N A1981 TO-92N Outline Dimensions unit mm 4.20 4.40 2.25 Max. 0.52 Max. 0.90 Max. 1.27 Typ. 0.40 Max. 1 2 3 3.55 Typ
2sa1980e.pdf
2SA1980E PNP Silicon Transistor PIN Connection Description General small signal amplifier Features 3 Low collector saturation voltage VCE(sat)=-0.3V(Max.) 1 Low output capacitance Cob=4pF(Typ.) 2 Complementary pair with 2SC5343E SOT-523 Ordering Information Type NO. Marking Package Code A 2SA1980E SOT-523 Device Code
2sa1981sf.pdf
2SA1981SF PNP Silicon Transistor Description PIN Connection Audio power amplifier application 3 Features High hFE hFE=100 320 1 Complementary pair with 2SC5344SF 2 SOT-23F Ordering Information Type NO. Marking Package Code EA 2SA1981SF SOT-23F Device Code hFE Rank Year&Week Code Absolute maximum ratings (Ta=25 C
2sa1981.pdf
2SA1981 PNP Silicon Transistor Description PIN Connection Audio power amplifier application E B Features C High hFE hFE=100 320 TO-92 Complementary pair with 2SC5344 Ordering Information Type NO. Marking Package Code 2SA1981 A1981 TO-92 Absolute maximum ratings (Ta=25 C) Characteristic Symbol Ratings Unit Collector-Base voltage VCBO -35 V Collec
2sa1980m.pdf
2SA1980M PNP Silicon Transistor Description PIN Connection General small signal amplifier Features Low collector saturation voltage VCE(sat)=-0.3V(Max.) Low output capacitance Cob=4pF(Typ.) Complementary pair with 2SC5343M TO-92M Ordering Information Type NO. Marking Package Code 2SA1980M 1980 TO-92M Absolute maximum ratings Ta=25 C Characte
2sa1960.pdf
2SA1960 Silicon NPN Epitaxial ADE-208-392 1st. Edition Application Wide band video output amplifier for color CRT monitor. High frequency high voltage amplifier. High speed power switching. Complementary pair with 2SC5225. Features High voltage large current operation. VCEO = 80 V, IC = 300 mA High fT. fT = 1.3 GHz Small output capacitance. Cob =
2sa1988.pdf
SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SA1988 DESCRIPTION With TO-3PN package High collector-emitter voltage APPLICATIONS For audio frequency power amplifier and industrial use PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol 3 Emitter Absolute maximum rati
2sa1980.pdf
2SA1980 -150 mA, -50 V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free TO-92 FEATURES Low collector saturation voltage VCE(sat) =-0.3V(Max.) Low output capacitance Cob=4pF (Typ.) G H Complements of the 2SC5343 1 Emitter 1 1 1 2 Collector 2 2 2 J 3 Base 3 3 3 CLASSIF
2sa1981.pdf
2SA1981 -0.8 A, -35 V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free TO-92 FEATURES High DC Current Gain Complementary Pair with 2SC5344 G H Emitter Collector CLASSIFICATION OF hFE Base J Product-Rank 2SA1981-O 2SA1981-Y A D Millimeter Range 100 200 160 320
2sa1939.pdf
2SA1939 PNP PLANAR SILICON TRANSISTOR AUDIO POWER AMPLIFIER DC TO DC CONVERTER SC-65 High Current Capability High Power Dissipation Complementary to 2SC5196 ABSOLUTE MAXIMUM RATING (Ta=25 c c) c c Characteristic Symbol Rating Unit Collector-Base Voltage VCBO -120 V Collector-Emitter Voltage VCEO -80 V Emitter-Base voltage VEBO -6 V Collector Current (DC) IC -6 A Collec
2sa1946.pdf
ISAHAYA ELECTRONICS CORPORATION ISAHAYA ELECTRONICS CORPORATION http //www.idc-com.co.jp 6-41, TSUKUBA, ISAHAYA, NAGASAKI, 854-0065, JAPAN Keep safety in your circuit designs ! Isahaya Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with
2sa1947.pdf
ISAHAYA ELECTRONICS CORPORATION ISAHAYA ELECTRONICS CORPORATION http //www.idc-com.co.jp 6-41, TSUKUBA, ISAHAYA, NAGASAKI, 854-0065, JAPAN Keep safety in your circuit designs ! Isahaya Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with
2sa1945.pdf
ISAHAYA ELECTRONICS CORPORATION ISAHAYA ELECTRONICS CORPORATION http //www.idc-com.co.jp 6-41, TSUKUBA, ISAHAYA, NAGASAKI, 854-0065, JAPAN Keep safety in your circuit designs ! Isahaya Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with
2sa1995.pdf
Marketing division, Marketing planning department 6-41 Tsukuba, Isahaya, Nagasaki, 854-0065 Japan Keep safety first in your circuit designs! ISAHAYA Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injur
2sa1998.pdf
ISAHAYA ELECTRONICS CORPORATION ISAHAYA ELECTRONICS CORPORATION ISAHAYA ELECTRONICS CORPORATION http //www.idc-com.co.jp 6-41, TSUKUBA, ISAHAYA, NAGASAKI, 854-0065, JAPAN Keep safety in your circuit designs ! Isahaya Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble
2sa1993.pdf
ISAHAYA ELECTRONICS CORPORATION ISAHAYA ELECTRONICS CORPORATION ISAHAYA ELECTRONICS CORPORATION http //www.idc-com.co.jp 6-41, TSUKUBA, ISAHAYA, NAGASAKI, 854-0065, JAPAN Keep safety in your circuit designs ! Isahaya Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble
2sa1948.pdf
ISAHAYA ELECTRONICS CORPORATION ISAHAYA ELECTRONICS CORPORATION ISAHAYA ELECTRONICS CORPORATION http //www.idc-com.co.jp 6-41, TSUKUBA, ISAHAYA, NAGASAKI, 854-0065, JAPAN Keep safety in your circuit designs ! Isahaya Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble
2sa1989.pdf
ISAHAYA ELECTRONICS CORPORATION ISAHAYA ELECTRONICS CORPORATION http //www.idc-com.co.jp 6-41, TSUKUBA, ISAHAYA, NAGASAKI, 854-0065, JAPAN Keep safety in your circuit designs ! Isahaya Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with
2sa1944.pdf
ISAHAYA ELECTRONICS CORPORATION ISAHAYA ELECTRONICS CORPORATION ISAHAYA ELECTRONICS CORPORATION http //www.idc-com.co.jp 6-41, TSUKUBA, ISAHAYA, NAGASAKI, 854-0065, JAPAN Keep safety in your circuit designs ! Isahaya Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble
2sa1952.pdf
JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-252-2L Plastic-Encapsulate Transistors 2SA1952 TRANSISTOR (PNP) FEATURES TO-252-2L -5A,-60V Middle Power Transistor Suitable for Middle Power Driver Complementary NPN Types 2SC5103 Low Collector-emitter saturation voltage 2 1. BASE 1 3 APPLICATIONS 2. COLLECTOR Middle Power Driver LED Driver 3. EMITTER Power Suppl
2sa1987.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SA1987 DESCRIPTION With TO-3PL package Complement to type 2SC5359 High collector voltage APPLICATIONS Power amplifier applications Recommended for 100W high fidelity audio frequency amplifier output stage PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base Fig.1 simplified ou
2sa1908.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SA1908 DESCRIPTION With TO-3PML package Complement to type 2SC5100 APPLICATIONS Audio and general purpose PINNING PIN DESCRIPTION 1 Emitter 2 Collector Fig.1 simplified outline (TO-3PML) and symbol 3 Base Absolute maximum ratings(Tc=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base volta
2sa1942.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SA1942 DESCRIPTION With TO-3PL package Complement to type 2SC5199 APPLICATIONS Power amplifier applications Recommended for 80W high fidelity audio frequency amplifier output stage PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PL) and symbol
2sa1988.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SA1988 DESCRIPTION With TO-3PN package High collector-emitter voltage APPLICATIONS For audio frequency power amplifier and industrial use PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol 3 Emitter Absolute maximum ratings(Ta= ) SYM
2sa1943.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SA1943 DESCRIPTION With TO-3PL package Complement to type 2SC5200 APPLICATIONS Power amplifier applications Recommended for 100W high fidelity audio frequency amplifier output stage PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PL) and symbol
2sa1986.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SA1986 DESCRIPTION With TO-3P(I) package Complement to type 2SC5358 APPLICATIONS Power amplifier applications Recommend for 80W high fidelity audio frequency amplifier output stage PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3P(I)) and symbol
2sa1909.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SA1909 DESCRIPTION With TO-3PML package Complement to type 2SC5101 APPLICATIONS Audio and general purpose PINNING PIN DESCRIPTION 1 Emitter 2 Collector Fig.1 simplified outline (TO-3PML) and symbol 3 Base Absolute maximum ratings(Tc=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base volta
2sa1962.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SA1962 DESCRIPTION With TO-3P(I) package Complement to type 2SC5242 High collector voltage VCEO=-230V(Min) APPLICATIONS Power amplifier applications Recommend for 80W high fidelity audio frequency amplifier output stage PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.
2sa1941.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SA1941 DESCRIPTION With TO-3P(I) package Complement to type 2SC5198 APPLICATIONS Power amplifier applications Recommend for 70W high fidelity audio frequency amplifier output stage PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3P(I)) and symbol
2sa1907.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SA1907 DESCRIPTION With TO-3PML package Complement to type 2SC5099 APPLICATIONS Audio and general purpose PINNING PIN DESCRIPTION 1 Emitter 2 Collector Fig.1 simplified outline (TO-3PML) and symbol 3 Base Absolute maximum ratings(Tc=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base volta
2sa1940.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SA1940 DESCRIPTION With TO-3P(I) package Complement to type 2SC5197 APPLICATIONS Power amplifier applications Recommend for 55W high fidelity audio frequency amplifier output stage PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3P(I)) and symbol
2sa1939.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SA1939 DESCRIPTION With TO-3P(I) package Complement to type 2SC5196 APPLICATIONS Power amplifier applications Recommend for 40W high fidelity audio frequency amplifier output stage PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3P(I)) and symbo
2sa1909.pdf
2SA1909 Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC5101) Application Audio and General Purpose External Dimensions FM100(TO3PF) Absolute maximum ratings (Ta=25 C) Electrical Characteristics (Ta=25 C) Symbol Ratings Unit Symbol Conditions Ratings Unit 0.2 0.2 5.5 15.6 0.2 3.45 VCBO 140 V ICBO VCB= 140V 10max A VCEO 140 V IEBO VEB= 6V
2sa1907.pdf
2SA1907 Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC5099) Application Audio and General Purpose External Dimensions FM100(TO3PF) Absolute maximum ratings (Ta=25 C) Electrical Characteristics (Ta=25 C) Symbol Ratings Unit Symbol Conditions Ratings Unit 0.2 0.2 5.5 15.6 0.2 3.45 VCBO 80 V ICBO VCB= 80V 10max A VCEO 80 V IEBO VEB= 6V 10m
2sa1980.pdf
2SA1980(PNP) TO-92 Bipolar Transistors TO-92 1. EMITTER 2. COLLECTOR 3. BASE Features Low collector saturation voltage VCE(sat) =-0.3V(Max.) Low output capacitance Cob =4pF (Typ.) Complementary pair with 2SC5343 Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -50 V
2sc5198 2sa1941.pdf
Complementary NPN-PNP Power Bipolar Transistor R 2SC5198 2SA1941 APPLICATIONS Audio Products Home Amplifiers Home Receivers Auto Audio Amplifiers FEATURES VCEO=140V (min) High collector voltage VCEO
2sa1930i.pdf
2SA1930I(BR3CA1930I) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-251 PNP Silicon PNP transistor in a TO-251 Plastic Package. / Features 2SC5171I(BR3DA5171I) High fT, complementary pair with 2SC5171I(BR3DA5171I). / Applications General power and d
st2sa1900u.pdf
ST 2SA1900U PNP Silicon Epitaxial Planar Transistor Medium power transistor Absolute Maximum Ratings (Ta = 25 ) Parameter Symbol Value Unit Collector Base Voltage -VCBO 60 V Collector Emitter Voltage -VCEO 50 V Emitter Base Voltage -VEBO 5 V Collector Current -IC 1 A Collector Current (Pw = 20 ms) -ICP 2 A 0.5 PC W Collector Power Dissipation 2 1) Junction Temperature Tj
2sa1943bl.pdf
RoHS 2SA1943BL Series RoHS SEMICONDUCTOR Nell High Power Products Silicon PNP triple diffusion planar transistor -15A/-230V/150W 5.00 20.00 0.20 18.00 3.30 0.20 TO-3PL FEATURES High breakdown voltage, VCEO = -230V (min) Complementary to 2SC5200BL 0.60 3.20 TO-3PL package which can be installed to the 5.45 0.05 5.45 0.05 heat sink with one screw 1 2 3 APPLICATIONS S
2sa1941b.pdf
RoHS 2SA1941B Series RoHS SEMICONDUCTOR Nell High Power Products Silicon PNP triple diffusion planar transistor -10A/-140V/100W 15.6 0.4 4.8 0.2 9.6 2.0 0.1 3.2 0,1 2 TO-3P(B) 3 +0.2 +0.2 0.65 1.05 -0.1 -0.1 FEATURES High breakdown voltage, VCEO = -140V (min) 5.45 0.1 5.45 0.1 1.4 Complementary to 2SC5198B B C E TO-3P package which can be installed to the
2sa1946.pdf
SMD Type Transistors PNP Transistors 2SA1946 1.70 0.1 Features Low collector saturation voltage High fT,fT=180MHz(typ) High collector current ICM=-1A 0.42 0.1 0.46 0.1 Small package for mounting Complements to 2SC5212 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -25
2sa1979uf.pdf
SMD Type Transistors PNP Transistors 2SA1979UF Features Large collector current ICMax=-500mA Complements to 2SC5342UF 1 Base 2 Emitter 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -40 Collector - Emitter Voltage VCEO -32 V Emitter - Base Voltage VEBO -5 Collector Current - Continuous IC -500 mA
2sa1980uf.pdf
SMD Type Transistors PNP Transistors 2SA1980UF Features Low collector saturation voltage Low output capacitance Cob=4pF(Typ.) Complements to 2SC5343UF 1 Base 2 Emitter 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -50 Collector - Emitter Voltage VCEO -50 V Emitter - Base Voltage VEBO -5 Coll
2sa1947.pdf
SMD Type Transistors PNP Transistors 2SA1947 1.70 0.1 Features High fT,fT=100MHz(typ) High collector current ICM=-1.5A Small package for mounting 0.42 0.1 0.46 0.1 Complements to 2SC5214 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -30 Collector - Emitter Voltage VCEO -2
2sa1945.pdf
SMD Type Transistors PNP Transistors 2SA1945 1.70 0.1 Features High voltage High fT,fT=150MHz(typ) High collector current ICM=-600mA 0.42 0.1 0.46 0.1 Small package for mounting Complements to 2SC5211 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -55 Collector - Emi
2sa1953.pdf
SMD Type Transistors PNP Transistors 2SA1953 SOT-23 Unit mm 2.9+0.1 -0.1 +0.1 0.4 -0.1 3 Features Collector Current Capability IC=-500mA 1 2 Collector Emitter Voltage VCEO=-12V +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -15 C
2sa1971.pdf
SMD Type Transistors PNP Transistors 2SA1971 SOT-89 Unit mm 1.70 0.1 Features Collector Current Capability IC=-0.5A Collector Emitter Voltage VCEO=-400V 0.42 0.1 0.46 0.1 Marking A*L 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -400 Collector - Emitter Voltage VCEO -400 V
2sa1900.pdf
SMD Type Transistors PNP Transistors 2SA1900 SOT-89 Unit mm 1.70 0.1 Features Collector Current Capability IC=-1A Collector Emitter Voltage VCEO=-50V Complements the 2SC5053 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -60 Collector - Emitter Voltage VCEO -
2sa1948.pdf
SMD Type Transistors PNP Transistors 2SA1948 SOT-89 Unit mm 1.70 0.1 Features Collector Current Capability IC=-0.1A Collector Emitter Voltage VCEO=-120V Complementary to 2SC5213 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -120 Collector - Emitter Voltage V
2sa1954.pdf
SMD Type Transistors PNP Transistors 2SA1954 Features Low saturation voltage VCE (sat) (1) = -15 mV (typ.) @IC = -10 mA/IB = -0.5 mA Large collector current IC = -500 mA (max) 1 Base 2 Emitter 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -15 Collector - Emitter Voltage VCEO -12 V Emitter - Base V
2sa1981sf.pdf
SMD Type or SMD Type TransistICs PNP Transistors 2SA1981SF SOT-23 Unit mm +0.1 2.9 -0.1 0.4+0.1 -0.1 3 Features High hFE hFE=100 to 320 Complementary pair with 2SC5344SF 1 2 +0.1 +0.05 0.95 -0.1 0.1-0.01 +0.1 1.9 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO -35 V Collector-emitter vo
2sa1944.pdf
SMD Type Transistors PNP Transistors 2SA1944 1.70 0.1 Features High voltage Low collector-to-emitter saturation voltage. High hFE hFE=400 to 800 0.42 0.1 0.46 0.1 Small package for mounting Complements to 2SC5209 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -50 Col
2sa1930s.pdf
2SA1930S(3CA1930S) PNP /SILICON PNP TRANSISTOR Purpose General power and driver stage amplifier applications. 2SC5171S(3DA5171S) Features High f , complementary pair with 2SC5171S(3DA5171S). T /Absolute maximum ratings(Ta=25 )
2sa1930 3ca1930.pdf
2SA1930(3CA1930) PNP /SILICON PNP TRANSISTOR Purpose General power and driver stage amplifier applications. 2SC5171(3DA5171) Features High f , complementary pair with 2SC5171(3DA5171). T /Absolute maximum ratings(Ta=25 ) Sym
2sa1930s 3ca1930s.pdf
2SA1930S(3CA1930S) PNP /SILICON PNP TRANSISTOR Purpose General power and driver stage amplifier applications. 2SC5171S(3DA5171S) Features High f , complementary pair with 2SC5171S(3DA5171S). T /Absolute maximum ratings(Ta=25 )
2sa1930i 3ca1930i.pdf
2SA1930I(3CA1930I) PNP /SILICON PNP TRANSISTOR Purpose General power and driver stage amplifier applications. 2SC5171I(3DA5171I) Features High f , complementary pair with 2SC5171I(3DA5171I). T /Absolute maximum ratings(Ta=25 )
2sa1964 3ca1964.pdf
2SA1964(3CA1964) PNP /SILICON PNP TRANSISTOR ( ) Purpose High-voltage switching(audio output amplifier transistor, stabilized power supply transistor). h f 2SC5248(3DA5248) T FE Features Flat DC curren
2sa1941 3ca1941.pdf
2SA1941(3CA1941) PNP /SILICON PNP TRANSISTOR Purpose Power amplifier applications. 70W 2SC5198 3DA5198 Features Recommend for 70W high fidelity audio frequency amplifier output stage, Complementary to 2SC5198(3DA5198). /Absolute maximum ratings(Ta=25 )
2sa1943.pdf
Silicon NPN transistor Features Power Amplifier Applications Complementary to 2SC5200 High collector voltage VCEO=230V (min) Recommended for 100-W high-fidelity audio frequency amplifier Output stage Note Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this produc
2sa1941.pdf
2SA1941 Silicon PNP transistor Power Amplifier Applications Complementary to 2SC5198 High collector voltage VCEO=-140V (min) Recommended for 100-W high-fidelity audio frequency amplifier Output stage Note Using continuously under heavy loads (e.g. the applicatio of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to d
2sa1941t6tl.pdf
2SA1941T6TL Silicon PNP Power Transistor DESCRIPTION Low Collector Saturation Voltage- V =- 2.0V(Min) @I =- 7A CE(sat) C Good Linearity of h FE Complement to Type 2SC5198 APPLICATIONS Power amplifier applications Recommend for 70W high fidelity audio frequency amplifier output stage applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Colle
2sa1943t7tl.pdf
2SA1943T7TL Silicon PNP Power Transistor DESCRIPTION High Collector-Emitter Breakdown Voltage- V = -230V(Min) (BR)CEO Complement to Type 2SC5200 APPLICATIONS Power amplifier applications Recommended for 100W high fidelity audio frequency amplifier output stage ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage -230 V CBO V Collector-
2sa1943.pdf
2SA1943 Minos High Power Products PNP TRANSISTORS Features Power Amplifier Applications Complementaryto2SC5200 Highcollector voltage VCEO=-230V (min) Recommendedfor 100-Whigh-fidelity audiofrequency amplifier Output stage Note Using continuously under heavy loads (e.g. theapplication of hightemperature/current/voltageandthe significant change in temperature, etc.) may causethis pro
2sa1940r 2sa1940o.pdf
SPTECH Product Specification SPTECH Silicon PNP Power Transistor 2SA1940 DESCRIPTION Low Collector Saturation Voltage- V = -2.0V(Min) @I = -6A CE(sat) C Good Linearity of h FE Complement to Type 2SC5197 APPLICATIONS Power amplifier applications Recommend for 55W high fidelity audio frequency amplifier output stage applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMB
2sa1941r 2sa1941o.pdf
SPTECH Product Specification SPTECH Silicon PNP Power Transistor 2SA1941 DESCRIPTION Low Collector Saturation Voltage- V =- 2.0V(Min) @I =- 7A CE(sat) C Good Linearity of h FE Complement to Type 2SC5198 APPLICATIONS Power amplifier applications Recommend for 70W high fidelity audio frequency amplifier output stage applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMB
2sa1943r 2sa1943o.pdf
SPTECH Product Specification SPTECH Silicon PNP Power Transistor 2SA1943 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = -230V(Min) (BR)CEO Complement to Type 2SC5200 APPLICATIONS Power amplifier applications Recommended for 100W high fidelity audio frequency amplifier output stage ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER VALUE UNIT V Collector-Base V
2sa1941.pdf
2SA1941 Transistor Silicon PNP Epitaxial Type Power Amplifier Applications FEATURES * High collector voltage Vceo=-140V(min) * Recommended for 70W high-fidelity audio Frequency amplifier output * Complementary to 2SC5198 MAXIMUM RATINGS (Ta=25 ) Parameter Symbol Rating Unit Collector-Base Voltage VCBO -140 V Collector-Emitter Voltage VCEO -140 V Emitter-Base Volta
2sa1987.pdf
isc Silicon PNP Power Transistor 2SA1987 DESCRIPTION High Current Capability High Power Dissipation High Collector-Emitter Breakdown Voltage- V = -230V(Min) (BR)CEO Complement to Type 2SC5359 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications Recommend for 100W high fidelity audio frequency amp
2sa1931.pdf
isc Silicon PNP Power Transistor 2SA1931 DESCRIPTION Low Collector Saturation Voltage- V = -0.4V(Max.)@I = -3A CE(sat) C High Switching Speed Complement to Type 2SC3299 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high current switching applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VAL
2sa1943n.pdf
isc Silicon PNP Power Transistor 2SA1943N DESCRIPTION High Current Capability High Power Dissipation High Collector-Emitter Breakdown Voltage- V = -230V(Min) (BR)CEO Complement to Type 2SC5200N Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications Recommend for 100W high fidelity audio frequency a
2sa1908.pdf
isc Silicon PNP Power Transistor 2SA1908 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -120V(Min) (BR)CEO Good Linearity of h FE Complement to Type 2SC5100 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio and general purpose applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UN
2sa1942.pdf
isc Silicon PNP Power Transistor 2SA1942 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = -160V(Min) (BR)CEO Complement to Type 2SC5199 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications Recommend for 80W high fidelity audio frequency amplifier output stage applications ABSOLUTE MAXIMUM RA
2sa1988.pdf
INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1988 DESCRIPTION High Voltage TO-3P package 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS The 2SA1988 is PNP silicon power transistor that designed for audio frequency power amplifier ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE
2sa1964.pdf
isc Silicon PNP Power Transistor 2SA1964 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -160V(Min) (BR)CEO Good Linearity of h FE Wide Area of Safe Operation Complement to Type 2SC5248 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications. Driver stage amplifier applications. ABSOLUTE MAXI
2sa1943.pdf
isc Silicon PNP Power Transistor 2SA1943 DESCRIPTION High Current Capability High Power Dissipation High Collector-Emitter Breakdown Voltage- V =- 230V(Min) (BR)CEO Complement to Type 2SC5200 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications Recommend for 100W high fidelity audio frequency amp
2sa1986.pdf
isc Silicon PNP Power Transistor 2SA1986 DESCRIPTION High Current Capability High Power Dissipation High Collector-Emitter Breakdown Voltage- V = -230V(Min) (BR)CEO Complement to Type 2SC5358 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications Recommend for 80W high fidelity audio frequency amp
2sa1909.pdf
isc Silicon PNP Power Transistor 2SA1909 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -140V(Min) (BR)CEO Good Linearity of h FE Complement to Type 2SC5101 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio and general purpose applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UN
2sa1962.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor 2SA1962 DESCRIPTION Collector-Emitter Breakdown Voltage- V(BR)CEO= -230V(Min) Good Linearity of hFE Complement to Type 2SC5242 APPLICATIONS Power amplifier applications Recommend for 80W high fidelity audio frequency amplifier output stage applications ABSOLUTE MAXIMUM RATINGS(
2sa1941.pdf
isc Silicon PNP Power Transistor 2SA1941 DESCRIPTION Low Collector Saturation Voltage- V =- 2.0V(Min) @I =- 7A CE(sat) C Good Linearity of h FE Complement to Type 2SC5198 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications Recommend for 70W high fidelity audio frequency amplifier output stage app
2sa1952.pdf
INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1952 DESCRIPTION Low Collector Saturation Voltage V = -0.3(V)(Max)@I = -3A CE(sat) C High Switching Speed Complement to Type 2SC5103 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high current switching applications. ABSOLUTE MA
2sa1907.pdf
isc Silicon PNP Power Transistor 2SA1907 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -80V(Min) (BR)CEO Good Linearity of h FE Complement to Type 2SC5099 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio and general purpose applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNI
2sa1940.pdf
isc Silicon PNP Power Transistor 2SA1940 DESCRIPTION Low Collector Saturation Voltage- V = -2.0V(Min) @I = -6A CE(sat) C Good Linearity of h FE Complement to Type 2SC5197 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications Recommend for 55W high fidelity audio frequency amplifier output stage app
2sa1932.pdf
INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1932 DESCRIPTION High collector breakdown voltage Complementary to 2SC5174 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications. Driver stage amplifier ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V
2sa1939.pdf
isc Silicon PNP Power Transistor 2SA1939 DESCRIPTION Low Collector Saturation Voltage- V = -2.0V(Min) @I = -5A CE(sat) C Good Linearity of h FE Complement to Type 2SC5196 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications Recommend for 40W high fidelity audio frequency amplifier output stage app
Otros transistores... 2SA1889C, 2SA189, 2SA18H, 2SA19, 2SA190, 2SA1907, 2SA1908, 2SA1909, 2SD669, 2SA192, 2SA193, 2SA194, 2SA195, 2SA1958, 2SA196, 2SA1967, 2SA1968
Parámetros del transistor bipolar y su interrelación.
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