2SA198 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: 2SA198
   Material: Ge
   Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

   Disipación total del dispositivo (Pc): 0.03 W
   Tensión colector-base (Vcb): 15 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 0.01 A
   Temperatura operativa máxima (Tj): 75 °C

CARACTERÍSTICAS ELÉCTRICAS

   Transición de frecuencia (ft): 2 MHz
   Ganancia de corriente contínua (hfe): 30
   Paquete / Cubierta: TO1

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2SA198 Datasheet (PDF)

0.1. Size:173K toshiba
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2sa1988.pdf pdf_icon

DATA SHEETSilicon Power Transistor2SA1988PNP SILICON TRANSISTORPOWER AMPLIFIERINDUSTRIAL USEDESCRIPTIONPACKAGE DIMENSIONSThe 2SA1988 is PNP Silicon Power Transistor thatdesigned for audio frequency power amplifier.4.7 MAX.15.7 MAX. 3.20.21.5FEATURES4 High Voltage VCEO = -200 V DC Current Gain hFE = 70 to 200 TO-3P Package1 2 3ORDERING INFORMAT

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2SA1980-OMCCMicro Commercial ComponentsTM2SA1980-Y20736 Marilla Street ChatsworthMicro Commercial ComponentsCA 913112SA1980-GPhone: (818) 701-4933Fax: (818) 701-4939 2SA1980-LFeatures Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) Low Collector Saturation Voltage: V =0.3V(Max.)CE(sat) Low Output Capacitance

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Transistor2SA1982Silicon PNP epitaxial planer typeFor low-frequency high breakdown voltage amplificationUnit: mmComplementary to 2SC53462.5 0.11.056.9 0.1 0.05 (1.45)0.7 4.0 0.8FeaturesSatisfactory foward current transfer ratio hFE collector current ICcharacteristics.0.65 max.High collector to emitter voltage VCEO.Small collector output capacitance Cob.Mak

0.9. Size:37K panasonic
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2SA1980SFPNP Silicon TransistorPIN Connection Description General small signal amplifier 3 Features Low collector saturation voltage : 1 VCE(sat)=-0.3V(Max.) 2 Low output capacitance : Cob=4pF(Typ.) SOT-23F Complementary pair with 2SC5343SF Ordering Information Type NO. Marking Package Code CA 2SA1980SF SOT-23F

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2SA1980UFPNP Silicon TransistorPIN Connection Description General small signal amplifier 3 Features 1 Low collector saturation voltage : 2VCE(sat)=-0.3V(Max.) Low output capacitance : Cob=4pF(Typ.) SOT-323F Complementary pair with 2SC5343UF Ordering Information Type NO. Marking Package Code C 2SA1980UF SOT-323F Device Cod

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2SA1980NSemiconductor Semiconductor PNP Silicon TransistorDescription General small signal amplifier Features Low collector saturation voltage : VCE(sat)=-0.3V(Max.) Low output capacitance : Cob=4pF(Typ.) Complementary pair with 2SC5343N Ordering Information Type NO. Marking Package Code 2SA1980N A1980 TO-92N Outline Dimensions unit : mm 4.20~4

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2SA1980UPNP Silicon TransistorDescription PIN Connection General small signal amplifier Features Low collector saturation voltage : 3 VCE(sat)=-0.3V(Max.) 21 Low output capacitance : Cob=4pF(Typ.) Complementary pair with 2SC5343U SOT-323 Ordering Information Type NO. Marking Package Code C 2SA1980U SOT-323 Dev

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2SA1981S PNP Silicon Transistor Description C Audio power amplifier application Features BC High h : h =100~320 FE FEB Complementary pair with 2SC5344S E EOrdering Information Part Number Marking Package SOT-23 EA 2SA1981S SOT-23 * Device Code hFE Rank Year & Week Code Factory Management Code Ab

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2SA1980PNP Silicon TransistorPIN Connection Description General small signal amplifier EFeatures B Low collector saturation voltage : VCE(sat)=-0.3V(Max.) Low output capacitance : Cob=4pF(Typ.) C Complementary pair with 2SC5343 TO-92 Ordering Information Type NO. Marking Package Code 2SA1980 A1980 TO-92Absolute Maximum Ratings (Ta=25C) C

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2SA1980EFPNP Silicon TransistorDescription PIN Connection General small signal amplifier Features 3 Low collector saturation voltage : VCE(sat)=-0.3V(Max.) Low output capacitance : Cob=4pF(Typ.) 1 Complementary pair with 2SC5343EF 2 SOT-523F Ordering Information Type NO. Marking Package Code A 2SA1980EF SOT-523F Device C

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2SA1980S PNP Silicon Transistor Description C General small signal amplifier Features BC Low collector saturation voltage : V = 0.3V(Max.) CE(sat)B Low output capacitance : C = 4pF(Typ.) obE Complementary pair with 2SC5343S EOrdering Information SOT-23 Part Number Marking Package CA 2SA1980S SOT-23 *

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2SA1981NSemiconductor Semiconductor PNP Silicon TransistorDescription Audio power amplifier application Features High hFE : hFE=100~320 Complementary pair with 2SC5344N Ordering Information Type NO. Marking Package Code 2SA1981N A1981 TO-92N Outline Dimensions unit : mm 4.20~4.402.25 Max.0.52 Max.0.90 Max.1.27 Typ.0.40 Max.1 2 33.55 Typ

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2SA1980EPNP Silicon TransistorPIN Connection Description General small signal amplifier Features 3 Low collector saturation voltage : VCE(sat)=-0.3V(Max.) 1 Low output capacitance : Cob=4pF(Typ.) 2 Complementary pair with 2SC5343E SOT-523 Ordering Information Type NO. Marking Package Code A 2SA1980E SOT-523 Device Code

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2SA1981SFPNP Silicon TransistorDescription PIN Connection Audio power amplifier application 3 Features High hFE : hFE=100~320 1 Complementary pair with 2SC5344SF 2 SOT-23F Ordering Information Type NO. Marking Package Code EA 2SA1981SF SOT-23F Device Code hFE Rank Year&Week Code Absolute maximum ratings (Ta=25C

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2SA1981PNP Silicon TransistorDescription PIN Connection Audio power amplifier application EBFeatures C High hFE : hFE=100~320 TO-92 Complementary pair with 2SC5344 Ordering Information Type NO. Marking Package Code 2SA1981 A1981 TO-92 Absolute maximum ratings (Ta=25C) Characteristic Symbol Ratings UnitCollector-Base voltage VCBO -35 VCollec

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2SA1980MPNP Silicon TransistorDescription PIN Connection General small signal amplifier Features Low collector saturation voltage : VCE(sat)=-0.3V(Max.) Low output capacitance : Cob=4pF(Typ.) Complementary pair with 2SC5343M TO-92M Ordering Information Type NO. Marking Package Code 2SA1980M 1980 TO-92M Absolute maximum ratings Ta=25C Characte

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SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SA1988 DESCRIPTION With TO-3PN package High collector-emitter voltage APPLICATIONS For audio frequency power amplifier and industrial use PINNING PIN DESCRIPTION1 Base Collector;connected to 2mounting base Fig.1 simplified outline (TO-3PN) and symbol 3 Emitter Absolute maximum rati

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2SA1980 -150 mA, -50 V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free TO-92 FEATURES Low collector saturation voltage: VCE(sat) =-0.3V(Max.) Low output capacitance : Cob=4pF (Typ.) G H Complements of the 2SC5343 1 Emitter 1112 Collector 222J3 Base 333CLASSIF

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2SA1981 -0.8 A, -35 V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free TO-92 FEATURES High DC Current Gain Complementary Pair with 2SC5344 G HEmitterCollector CLASSIFICATION OF hFE Base JProduct-Rank 2SA1981-O 2SA1981-Y A DMillimeterRange 100~200 160~320

0.26. Size:136K isahaya
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ISAHAYA ELECTRONICS CORPORATIONISAHAYA ELECTRONICS CORPORATIONhttp://www.idc-com.co.jp6-41, TSUKUBA, ISAHAYA, NAGASAKI, 854-0065, JAPANKeep safety in your circuit designs !Isahaya Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with

0.27. Size:152K jmnic
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JMnic Product Specification Silicon PNP Power Transistors 2SA1987 DESCRIPTION With TO-3PL package Complement to type 2SC5359 High collector voltage APPLICATIONS Power amplifier applications Recommended for 100W high fidelity audio frequency amplifier output stage PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base Fig.1 simplified ou

0.28. Size:177K jmnic
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JMnic Product Specification Silicon PNP Power Transistors 2SA1988 DESCRIPTION With TO-3PN package High collector-emitter voltage APPLICATIONS For audio frequency power amplifier and industrial use PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol 3 EmitterAbsolute maximum ratings(Ta=) SYM

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JMnic Product Specification Silicon PNP Power Transistors 2SA1986 DESCRIPTION With TO-3P(I) package Complement to type 2SC5358 APPLICATIONS Power amplifier applications Recommend for 80W high fidelity audio frequency amplifier output stage PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3P(I)) and symbol

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2SA1980(PNP)TO-92 Bipolar TransistorsTO-92 1. EMITTER 2. COLLECTOR 3. BASE FeaturesLow collector saturation voltage: VCE(sat) =-0.3V(Max.) Low output capacitance : Cob =4pF (Typ.) Complementary pair with 2SC5343 Dimensions in inches and (millimeters)MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage -50 V

0.31. Size:1003K kexin
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SMD Type TransistorsPNP Transistors2SA1980UF Features Low collector saturation voltage Low output capacitance : Cob=4pF(Typ.) Complements to 2SC5343UF1 Base2 Emitter3 Collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -50 Collector - Emitter Voltage VCEO -50 V Emitter - Base Voltage VEBO -5 Coll

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SMD Type orSMD Type TransistICsPNP Transistors 2SA1981SFSOT-23Unit: mm+0.12.9 -0.10.4+0.1-0.13FeaturesHigh hFE: hFE=100 to 320 Complementary pair with 2SC5344SF1 2+0.1+0.050.95 -0.1 0.1-0.01+0.11.9 -0.11.Base2.Emitter3.collectorAbsolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector-base voltage VCBO -35 VCollector-emitter vo

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isc Silicon PNP Power Transistor 2SA1987DESCRIPTIONHigh Current CapabilityHigh Power DissipationHigh Collector-Emitter Breakdown Voltage-: V = -230V(Min)(BR)CEOComplement to Type 2SC5359Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applicationsRecommend for 100W high fidelity audio frequency amp

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INCHANGE Semiconductorisc Silicon PNP Power Transistor 2SA1988DESCRIPTIONHigh VoltageTO-3P package100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSThe 2SA1988 is PNP silicon power transistor thatdesigned for audio frequency power amplifierABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE

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isc Silicon PNP Power Transistor 2SA1986DESCRIPTIONHigh Current CapabilityHigh Power DissipationHigh Collector-Emitter Breakdown Voltage-: V = -230V(Min)(BR)CEOComplement to Type 2SC5358Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applicationsRecommend for 80W high fidelity audio frequencyamp

Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , BC546 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .