2SA200 Todos los transistores

 

2SA200 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 2SA200
   Material: Ge
   Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.05 W
   Tensión colector-base (Vcb): 15 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 0.01 A
   Temperatura operativa máxima (Tj): 75 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 2 MHz
   Ganancia de corriente contínua (hfe): 40
   Paquete / Cubierta: TO1
 

 Búsqueda de reemplazo de 2SA200

   - Selección ⓘ de transistores por parámetros

 

2SA200 Datasheet (PDF)

 0.1. Size:52K  rohm
2sa2007.pdf pdf_icon

2SA200

2SA2007TransistorsHigh-speed Switching Transistor (-60V,-12A)2SA2007 External dimensions (Units : mm) Features1) High switching speed.10.0 4.5(Typ. tf = 0.15s at Ic = -6A)3.2 2.8 2) Low saturation voltage.(Typ. VCE(sat) = -0.2V at IC / IB = -6A / -0.3A)3) Wide SOA. (safe operating area)1.21.34) Complements the 2SC5526.0.8( )(1) Base Gate0.752.54 2.5

 0.2. Size:51K  rohm
2sa2005.pdf pdf_icon

2SA200

2SA2005TransistorsHigh-voltage Switching(Audio output amplifier transistor,TV velocity modulation transistor)(-160V, -1.5A)2SA2005 Features External dimensions (Units : mm)1) Flat DC current gain characteristics.2) High breakdown voltage. (BVCEO = -160V)10.0 4.53) High fT. (Typ. 150MHz)3.2 2.8 4) Wide SOA (safe operating area).5) Complements the 2SC5511.1.21.

 0.3. Size:62K  panasonic
2sa2004.pdf pdf_icon

2SA200

Power Transistors2SA2004Silicon PNP epitaxial planar typeUnit: mm4.60.2For power amplification 9.90.32.90.2 3.20.1 Features High forward current transfer ratio hFE Satisfactory linearity of forward current transfer ratio hFE Dielectric breakdown voltage of the package: > 5 kV High-speed switching1.40.22.60.11.60.20.80.1 0.550.15

 0.4. Size:50K  panasonic
2sa2009.pdf pdf_icon

2SA200

Transistors2SA2009Silicon PNP epitaxial planar typeFor low-frequency high breakdown voltage amplificationUnit: mm0.15+0.100.3+0.10.050.0 Features3 High collector-emitter voltage (Base open) VCEO Low noise voltage NV S-Mini type package, allowing downsizing and thinning of theequipment and automatic insertion through the tape packing. 1 2(0.65) (0.

Otros transistores... 2SA1958 , 2SA196 , 2SA1967 , 2SA1968 , 2SA197 , 2SA198 , 2SA199 , 2SA20 , MPSA42 , 2SA201 , 2SA202 , 2SA203 , 2SA204 , 2SA205 , 2SA206 , 2SA207 , 2SA208 .

History: JE9012H | 2N3743S

 

 
Back to Top

 


 
.