2SA210 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Power Transistors2SA2101Silicon PNP epitaxial planar typeUnit: mm4.60.2Power supply for Audio & Visual equipments9.90.32.90.2such as TVs and VCRsIndustrial equipments such as DC-DC converters 3.20.1 Features High-speed switching (tstg: storage time/tf: fall time is short)1.40.2 Low collector-emitter saturation voltage VCE(sat)2.60.11.60.2

Power Transistors2SA2102Silicon PNP epitaxial planar typeUnit: mm4.60.2Power supply for Audio & Visual equipments9.90.32.90.2such as TVs and VCRsIndustrial equipments such as DC-DC converters 3.20.1 Features High-speed switching (tstg: storage time/tf: fall time is short)1.40.2 Low collector-emitter saturation voltage VCE(sat)2.60.11.60.2

2SA2184 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA2184 High Voltage Switching Applications Unit: mm High voltage: VCEO = -550 V High speed: tf = 40 ns (typ.) (IC = -0.5A) Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitCollector-base voltage VCBO -550 VCollector-emitter voltage VCEO -550 VEmitter-base voltage VEBO -7 VDC IC -1

2SA2183 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA2183 High Current Switching Applications Unit: mm Low collector-emitter saturation : VCE(sat) = -1.0 Vmax Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitCollector-base voltage VCBO -60 VCollector-emitter voltage VCEO -60 VEmitter-base voltage VEBO -7 VDC IC -5.0 ACollector current

2SA2154CT TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA2154CT General Purpose Amplifier Applications High voltage and high current : VCEO = -50V, IC = -100mA (max) Unit: mm0.60.05 Excellent hFE linearity 0.50.03 : hFE (IC = -0.1 mA) / hFE (IC = -2 mA)= 0.95 (typ.) High hFE : hFE = 120 to 400 Complementary to 2SC6026CT Absolute M

2SA2182 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA2182 Unit: mmPower Amplifier Applications Driver Stage Amplifier Applications High transition frequency: fT = 80 MHz (typ.) Absolute Maximum Ratings (Tc = 25C) Characteristic Symbol Rating UnitCollector-base voltage VCBO - 230 VCollector-emitter voltage VCEO - 230 VEmitter-base voltage VEBO - 5 VDC IC - 1.0 A

2SA2154MFV TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA2154MFV General-Purpose Amplifier Applications Unit: mm1.2 0.05 High voltage and high current 0.80 0.05: VCEO = -50 V, IC = -150 mA (max) Excellent hFE linearity 1 : hFE (IC = -0.1 mA)/hFE (IC = -2 mA) = 0.95 (typ.) 1 High hFE : hFE = 120~400 Complementary to 2SC6026MFV 3

2SA2190 TOSHIBA Multi-chip Device Silicon PNP Epitaxial Transistor Type 2SA2190 Unit: mmPower Amplifier Applications Driver Stage Amplifier Applications High transition frequency: fT = 200 MHz (typ.) Absolute Maximum Ratings (Tc = 25C) Characteristic Symbol Rating UnitCollector-base voltage VCBO - 180 VCollector-emitter voltage VCEO - 180 VEmitter-base voltage VEBO -

2SA2120 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA2120 Power Amplifier Applications Unit: mm Complementary to 2SC5948 Recommended for audio frequency amplifier output stage. Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating UnitVCBOCollector-base voltage -200 V VCEOCollector-emitter voltage -200 V VEBOEmitter-base voltage -5 V

2SA2195 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA2195 High-Speed Switching Applications Unit: mmDC-DC Converter Applications 2.10.1Strobe Applications 1.70.1 High DC current gain: hFE = 200 to 500 (IC = -0.5 A) Low collector-emitter saturation voltage: VCE (sat) = -0.2 V (max) 1 High-speed switching: tf = 90 ns (typ.) 2 3Absolute Maximum Ratings

2SA2142 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA2142 High-Voltage Switching Applications Unit: mm High breakdown voltage: VCEO = -600 V Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating UnitCollector-base voltage VCBO -600 VCollector-emitter voltage VCEO -600 VEmitter-base voltage VEBO -7 VDC IC -0.5 Collector current A Pulse ICP -1

2SA2154CT TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA2154CT General Purpose Amplifier Applications High voltage and high current : V = -50V, I = -100mA (max) CEO C Unit: mm Excellent h linearity FE : h (I = -0.1 mA) / h (I = -2 mA)= 0.95 (typ.) FE C FE C High h h = 120 to 400 FE : FE Complementary to 2SC6026CT Absolute Maximum Ratings

2SA2121 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA2121 Power Amplifier Applications Unit: mm Complementary to 2SC5949 Recommended for audio frequency amplifier output stage. Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating UnitCollector-base voltage VCBO -200 VCollector-emitter voltage VCEO -200 VEmitter-base voltage VEBO -5 VCollector

2SA2154 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA2154 General-Purpose Amplifier Applications Unit: mm High voltage and high current : VCEO = -50 V, IC = -100 mA (max) Excellent hFE linearity : hFE (IC = -0.1 mA)/hFE (IC = -2 mA) = 0.95 (typ.) High hFE : hFE = 120~400 1 Complementary to 2SC6026 32 0.80.050.10.051.00.05Ab

Ordering number : ENN8123 2SA2153PNP Epitaxial Planar Silicon Transistor2SA2153High-Current Switching ApplicationsApplications Voltage regulators, relay drivers, lamp drivers, electrical equipment.Features Adoption of MBIT process. Low saturation voltage. High current capacity and wide ASO.SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Con

Ordering number : ENN80222SA2127PNP Epitaxial Planar Silicon Transistor2SA2127High-Current Switching ApplicationsApplications Voltage regulators, relay drivers, lamp drivers, electrical equipment.Features Adoption of MBIT process. Low saturation voltage. High current capacity and wide ASO.SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Co

Ordering number : ENN73792SA2112PNP Epitaxial Planar Silicon Transistors2SA2112High Current Switching ApplicationsApplicationsPackage Dimensions DC-DC converter, relay drivers, lamp drivers,unit : mmmotor drivers, strobes.2064A[2SA2112]Features 2.51.45 Adoption of MBIT process.6.9 1.0 Large current capacitance. Low collector-to-emitter saturation vo

2SA2169/2SC6017Ordering number : EN8275ASANYO SemiconductorsDATA SHEETPNP/NPN Epitaxial Planar Silicon Transistor2SA2169/2SC6017 High-Current SwitchingApplicationsApplications Relay drivers, lamp drivers, motor driversFeatures Adoption of MBIT processes Large current capacitance Low collector-to-emitter saturation voltage High-speed switching( ): 2SA

Ordering number : EN7920A 2SA2124SANYO SemiconductorsDATA SHEETPNP Epitaxial Planar Silicon Transistor2SA2124High-Current Switching ApplicationsApplications Voltage regulators, relay drivers, lamp drivers, electrical equipment.Features Adoption of MBIT processes. Low collector-to-emitter saturation voltage. High current capacity. High-speed switching.Spe

Ordering number : ENN7990 2SA2126PNP Epitaxial Planar Silicon Transistor2SA2126DC / DC Converter ApplicationsApplications DC / DC converter, relay drivers, lamp drivers, motor drivers.Features Adoption of MBIT process. High current capacitance. Low collector-to-emitter saturation voltage. High-speed switching.SpecificationsAbsolute Maximum Ratings at Ta=25

Ordering number : ENN82752SA2169 / 2SC6017PNP / NPN Epitaxial Planar Silicon TransistorsHigh-Current Switching2SA2169 / 2SC6017ApplicationsApplications Relay drivers, lamp drivers, motor drivers.Features Adoption of MBIT process. Large current capacitance. Low collector-to-emitter saturation voltage. High-speed switching.Specifications ( ) : 2SA2169Abs

Ordering number : ENA02692SA2186PNP Epitaxial Planar Silicon Transistor2SA2186High-Current Switching ApplicationsApplications Voltage regulators, relay drivers, lamp drivers, electrical equipment.Features Adoption of MBIT processes. High current capacity. Low collector-to-emitter saturation voltage. High-speed switching.SpecificationsAbsolute Maximum Rat

Ordering number : ENN79882SA2125 / 2SC5964PNP / NPN Epitaxial Planar Silicon Transistors2SA2125 / 2SC5964DC / DC Converter ApplicationsApplications DC / DC converter, relay drivers, lamp drivers, motor drivers, flash.Features Adoption of MBIT process. High current capacitance. Low collector-to-emitter saturation voltage. High-speed switching.Specifications

Ordering number : ENN79062SA2117 / 2SC5934PNP / NPN Epitaxial Planar Silicon Transistors2SA2117 / 2SC5934High Current Switching ApplicationsApplications Package Dimensions Relay drivers, lamp drivers, motor drivers. unit : mm2041AFeatures [2SA2117 / 2SC5934]4.5 Adoption of MBIT process. 10.02.8 High-speed switching.3.2 Large current capacitance. Low

2SA2126Ordering number : EN7990ASANYO SemiconductorsDATA SHEETPNP Epitaxial Planar Silicon TransistorDC / DC Converter Applications2SA2126Applications DC / DC converter, relay drivers, lamp drivers, motor driversFeatures Adoption of MBIT processes High current capacitance Low collector-to-emitter saturation voltage High-speed switchingSpecifications

2SA2030 / 2SA2018 / 2SA2119KDatasheetLow frequency transistor(-12V, -500mA)lOutlinelParameter Value SOT-723 SOT-416VCEO-12VIC-500mA 2SA2030 2SA2018(VMT3) (EMT3)lFeatures l SOT-346 1)High current.2)Collector-Emitter saturation voltage is low. VCE(sat)250mA at IC=-200mA/IB=-10

2SA2199 Transistors General Purpose Transistor (-50V, -100mA) 2SA2199 Applications Dimensions (Unit : mm) Small signal low frequency amplifier VMN3 Features 0.220.161) Excellent hFE linearity. (3)2) Complements the 2SC6114. Structure (1) (2)PNP silicon epitaxial 0.370.170.35planar transistor 0.6(1) Base(2) EmitterAbbreviated symbol : P (3) C

2SA2018 / 2SA2030 / 2SA2119K Transistors Low frequency transistor 2SA2018 / 2SA2030 / 2SA2119K The transistor of 500mA class which went only into 2125 size conventionally was attained in 1608 sizes or 1208 sizes. Dimensions (Unit : mm) Applications For switching, for muting. 2SA2018 Features 1) A collector current is large. 2) Collector saturation voltage is low. Each

2SA2113 Transistor Medium power transistor (-30V, -2A) 2SA2113 External dimensions (Units : mm) Features 1) High speed switching. (Tf : Typ. : 20ns at IC = -2A) 2.81.6TSMT32) Low saturation voltage, typically (Typ. : -200mV at IC = -1A, IB = -0.1A) 3) Strong discharge power for inductive load and capacitance load. 4) Complements the 2SC5916 (1)Base 0.3 0.6 Each

Ordering number : ENA0269A2SA2186Bipolar Transistorhttp://onsemi.com-50V, -2A, Low VCE(sat), PNP Single NMPApplicaitons Voltage regulators, relay drivers, lamp drivers, electrical equipmentFeatures Adoption of MBIT processes Large current capacity Low collector-to-emitter saturation voltage High-speed switchingSpecificationsAbsolute Maximum Ratings at

Ordering number : EN8123A2SA2153Bipolar Transistorhttp://onsemi.com-50V, -2A, Low VCE(sat), PNP Single PCPApplicaitons Voltage regulators, relay drivers, lamp drivers, electrical equipmentFeatures Adoption of MBIT process Low saturation voltage Large current capacity and wide ASOSpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions R

Ordering number : EN8022A2SA2127Bipolar Transistorhttp://onsemi.com-50V, -2A, Low VCE(sat), PNP Single MPApplications Voltage regulators, relay drivers, lamp drivers, electrical equipmentFeatures Adoption of MBIT process Low saturation voltage High current capacity and wide ASO SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions R

Ordering number : EN7920B2SA2124Bipolar Transistorhttp://onsemi.com-30V, -2A, Low VCE(sat), PNP Single PCPApplicaitons Voltage regulators, relay drivers, lamp drivers, electrical equipmentFeatures Adoption of MBIT processes Low collector-to-emitter saturation voltage Large current capacity High-speed switchingSpecificationsAbsolute Maximum Ratings at T

Ordering number : EN7990A2SA2126Bipolar Transistorhttp://onsemi.com-50V, -3A, Low VCE(sat), PNP Single TP/TP-FAApplications DC / DC converter, relay drivers, lamp drivers, motor driversFeatures Adoption of MBIT processes High current capacitance Low collector-to-emitter saturation voltage High-speed switchingSpecificationsAbsolute Maximum Ratings at Ta

Ordering number : EN8275A2SA2169/2SC6017Bipolar Transistorhttp://onsemi.com(-)50V, (-)10A, Low VCE(sat), (PNP)NPN Single TP/TP-FAApplications Relay drivers, lamp drivers, motor driversFeatures Adoption of MBIT processes Large current capacity Low collector-to-emitter saturation voltage High-speed switching( ): 2SA2169Specifications Absolute Maximum R

Ordering number : EN7988B2SA2125/2SC5964Bipolar Transistorhttp://onsemi.com() () ( ) ( )50V, 3A, Low VCE sat , PNP NPN Single PCPApplicaitons DC / DC converter, relay drivers, lamp drivers, motor drivers, flashFeatures Adoption of MBIT process Large current capacity Low collector to emitter saturation voltage High-speed switching Halogen free

Ordering number : EN7990A2SA2126Bipolar Transistorhttp://onsemi.com-50V, -3A, Low VCE(sat), PNP Single TP/TP-FAApplications DC / DC converter, relay drivers, lamp drivers, motor driversFeatures Adoption of MBIT processes High current capacitance Low collector-to-emitter saturation voltage High-speed switchingSpecificationsAbsolute Maximum Ratings at Ta

Ordering number : EN7379A2SA2112Bipolar Transistorhttp://onsemi.com-50V, -3A, Low VCE(sat), PNP Single NMPApplicaitons DC-DC converter, relay drivers, lamp drivers, motor drivers, strobesFeatures Adoption of MBIT process Large current capacity Low collector-to-emitter saturation voltage High-speed switchingSpecificationsAbsolute Maximum Ratings at Ta=2

Ordering number : EN7988B2SA2125/2SC5964Bipolar Transistorhttp://onsemi.com() () ( ) ( )50V, 3A, Low VCE sat , PNP NPN Single PCPApplicaitons DC / DC converter, relay drivers, lamp drivers, motor drivers, flashFeatures Adoption of MBIT process Large current capacity Low collector to emitter saturation voltage High-speed switching Halogen free

Product NewsDelivering high breakdown voltage plus high frequency characteristics.High-fT Transistors 2SA2140/2SC5993 Overview2SA2140/2SC5993 high-fT transistors deliver a typical fTUnit : mmvalue of 100MHz or higher at VCEO of 180V while featuring high-speed switching and low-saturation voltage characteristics. Making use of these transistors assists the production of power s

This product complies with the RoHS Directive (EU 2002/95/EC).Transistors 2SA2122GSilicon PNP epitaxial planar typeFor general amplificationComplementary to 2SC5950G Package Features Code High forward current transfer ratio hFE Smini typ package, allowing downsizing of the equipment andautomatic SMini3-F2 Marking symbol : 7Linsertion through the tape

Transistors 2SA2164Silicon PNP epitaxial planar typeFor high-frequency amplificationUnit: mm0.33+0.05 0.10+0.050.02 0.02 Features3 High transfer ratio fT SSS-Mini type package, allowing downsizing of the equipment andautomatic insertion through the tape packing.0.23+0.05 1 20.02(0.40)(0.40)0.800.05 Absolute Maximum Ratings Ta = 25C1.

2SA2167FOR HIGH CURRENT DRIVE APPLICATIONSILICON PNP EPITAXIAL TYPEUnitmmOUTLINE DRAWING DESCRIPTION 4.6MAX2SA2167 is a silicon PNP epitaxial type transistor. 1.6 1.5It is designed with high voltage, high Collector current, high Collector dissipation. CE BFEATURE 0.53High voltage VCEO=-60V MAX1.50.48MAX 0.4High Collector current IC=-2A 3.0Lo

2-1 TransistorsSpecifications List by Part NumberAbsolute Maximum RatingsICBO hFEVCBO VCEO Ic PcConditions ConditionsPart Number ApplicationsVCB VCE Ic(V) (V) (A) (W) ( A)min max(V) (V) (A)2SA1186 Audio, general-purpose 150 150 10 100 100 150 50 180 4 32SA1215 Audio, general-purpose 160 160 15 150 100 160 50 180 4 52SA1216

SMD Type TransistorsPNP Transistors2SA2126TO-252Unit: mm+0.156.50-0.15+0.12.30 -0.1+0.25.30-0.2 +0.80.50 -0.7 Features4 Collector Current Capability IC=-3A Collector Emitter Voltage VCEO=-50V0.127 High current capacitance.+0.10.80-0.1max Low collector-to-emitter saturation voltage High-speed switching.+ 0.11 Base2.3 0.60-

CHENMKO ENTERPRISE CO.,LTD2SA2119GPSURFACE MOUNT Low Ferquency PNP Transistor VOLTAGE 12 Volts CURRENT 0.5 AmpereAPPLICATION* For switching,for muting.FEATURE* Small surface mounting type. (SOT-23) SOT-23* A collector current is large.* Collector saturation voltage is low.VCE(sat)

CHENMKO ENTERPRISE CO.,LTD2SA2119TGPSURFACE MOUNT Low Ferquency PNP Transistor VOLTAGE 12 Volts CURRENT 0.5 AmpereAPPLICATION* For switching,for muting.FEATURE* Small surface mounting type. (SC-75/SOT-416) SC-75/SOT-416* A collector current is large.* Collector saturation voltage is low.VCE(sat)

SPTECH Product SpecificationSPTECH Silicon PNP Power Transistor 2SA2198DESCRIPTIONLow Collector Saturation Voltage:V = -0.5(V)(Max)@I = -5ACE(sat) CGood Linearity of hFEAPPLICATIONSDesigned for chopper regulator, switch and generalpurpose applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage -70 VCBOV Collector-E

isc Silicon PNP Power Transistor 2SA2151DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-V = -200V(Min)(BR)CEOGood Linearity of hFEComplement to Type 2SC6011Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio and general purpose applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VAL

INCHANGE Semiconductorisc Silicon PNP Power Transistor 2SA2120DESCRIPTIONRecommended for audio frequency amplifier output stageComplementary to 2SC5948100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Coll

isc Silicon PNP Power Transistor 2SA2126DESCRIPTIONLarge current capacitanceHigh-speed switching100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDC/DC converter,relay drivers,lamp drivers,motordriversABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage -50 VCB

isc Silicon PNP Power Transistor 2SA2121DESCRIPTIONHigh Current CapabilityHigh Power DissipationHigh Collector-Emitter Breakdown Voltage-: V = -200V(Min)(BR)CEOComplement to Type 2SC5949Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applicationsRecommended for audio frequency amplifier output sta

isc Silicon PNP Power Transistor 2SA2169DESCRIPTIONLarge current capacitanceHigh-speed switching100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationComplementary to 2SC6017APPLICATIONSrelay drivers,lamp drivers,motor driversABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltag

isc Silicon PNP Power Transistor 2SA2140DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -180V(Min)(BR)CEOGood Linearity of hFEMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplification and for TV VM circuit.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Vol

isc Silicon PNP Power Transistor 2SA2151ADESCRIPTIONHigh Collector-Emitter Breakdown Voltage-V = -230V(Min)(BR)CEOGood Linearity of hFEComplement to Type 2SC6011AMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio and general purpose applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER V