2SA22 Todos los transistores

 

2SA22 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 2SA22
   Material: Ge
   Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.1 W
   Tensión colector-base (Vcb): 20 V
   Corriente del colector DC máxima (Ic): 0.015 A
   Temperatura operativa máxima (Tj): 75 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 4 MHz
   Ganancia de corriente contínua (hfe): 25
   Paquete / Cubierta: TO5

 Búsqueda de reemplazo de transistor bipolar 2SA22

 

2SA22 Datasheet (PDF)

 0.1. Size:165K  toshiba
2sa2219.pdf

2SA22
2SA22

2SA2219 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA2219 Audio Frequency Amplifier Applications Unit: mm High collector voltage : VCEO = 160 V (min) Small collector output capacitance : Cob = 17pF (typ.) High transition frequency : fT = 100MHz (typ.) Complementary to 2SC6139 Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit

 0.2. Size:309K  toshiba
2sa2206.pdf

2SA22
2SA22

2SA2206 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA2206 Power Amplifier Applications Unit: mm Power Switching Applications Low collector emitter saturation voltage : V = -0.5 V (max) (I = -1A) CE (sat) CHigh-speed switching: t = 300 ns (typ.) stgComplementary to 2SC6124 Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating Unit Collector-base volt

 0.3. Size:125K  toshiba
2sa2215.pdf

2SA22
2SA22

2SA2215 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA2215 High-Speed Switching Applications Unit: mmDC-DC Converter Applications 2.10.1Strobe Applications 1.70.1 High DC current gain: hFE = 200 to 500 (IC = -0.5 A) Low collector-emitter saturation voltage: VCE (sat) = -0.19 V (max) 1 High-speed switching: tf = 40 ns (typ.) 32Absolute Maximum Rati

 0.4. Size:165K  toshiba
2sa2220.pdf

2SA22
2SA22

2SA2220 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA2220 Audio Frequency Amplifier Applications Unit: mm High collector voltage : VCEO = 160 V Small collector output capacitance : Cob = 17 pF (typ.) High transition frequency : fT = 100 MHz (typ.) Complementary to 2SC6140 Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitCol

 0.5. Size:126K  toshiba
2sa2214.pdf

2SA22
2SA22

2SA2214 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA2214 High-Speed Switching Applications Unit: mmDC-DC Converter Applications 2.10.1Strobe Applications 1.70.1 High DC current gain: hFE = 200 to 500 (IC = -1.5 A) Low collector-emitter saturation voltage: VCE (sat) = -0.14 V (max) 1 High-speed switching: tf = 37 ns (typ.) 32Absolute Maximum Rati

 0.6. Size:53K  sanyo
2sa2210.pdf

2SA22
2SA22

Ordering number : ENA0667 2SA2210SANYO SemiconductorsDATA SHEETPNP Epitaxial Planar Silicon Transistor2SA2210High-Current Switching ApplicationsApplications Relay drivers, lamp drivers, motor drivers.Features Adoption of MBIT processes. Large current capacitance. Low collector-to-emitter saturation voltage. High-speed switching.SpecificationsAbsolute M

 0.7. Size:39K  sanyo
2sa2205.pdf

2SA22
2SA22

Ordering number : ENA05442SA2205SANYO SemiconductorsDATA SHEETPNP Epitaxial Planar Silicon Transistor2SA2205High-Voltage Switching ApplicationsApplications DC / DC converter, Relay drivers, lamp drivers, motor drivers.Features Adoption of FBET, MBIT processes. Large current capacitance. Low collector-to-emitter saturation voltage. High-speed switching.

 0.8. Size:298K  sanyo
2sa2222sg.pdf

2SA22
2SA22

2SA2222SGOrdering number : ENA1799SANYO SemiconductorsDATA SHEETPNP Epitaxial Planar Silicon Transistor2SA2222SGHigh-Current Switching ApplicationsApplications Relay drivers, lamp drivers, motor driversFeatures Adoption of MBIT process Large current capacitance (IC=--10A) Low collector-to-emitter saturation voltage (VCE(sat)=--250mV(typ.)) High-speed swi

 0.9. Size:58K  sanyo
2sa2202.pdf

2SA22
2SA22

Ordering number : ENA0583 2SA2202SANYO SemiconductorsDATA SHEETPNP Epitaxial Planar Silicon Transistor2SA2202High-Voltage Switching ApplicationsApplications DC / DC converters, relay drivers, lamp drivers, motor drivers, flash.Features Adoption of FBET, MBIT processes. Large current capacitance. Low collector-to-emitter saturation voltage. High-speed switc

 0.10. Size:69K  sanyo
2sa2222.pdf

2SA22
2SA22

Ordering number : ENA1148 2SA2222SANYO SemiconductorsDATA SHEETPNP Epitaxial Planar Silicon Transistor2SA2222High-Current Switching ApplicationsApplications Relay drivers, lamp drivers, motor drivers.Features Adoption of MBIT process. Large current capacitance. Low collector-to-emitter saturation voltage. High-speed switching.SpecificationsAbsolute Max

 0.11. Size:241K  onsemi
2sa2210.pdf

2SA22
2SA22

Ordering number : ENA0667B2SA2210Bipolar Transistorhttp://onsemi.com ( )50V, 20A, Low VCE sat PNP TO-220F-3SGApplications Relay drivers, lamp drivers, motor drivers.Features Adoption of MBIT processes Large current capacitance Low collector-to-emitter saturation voltage High-speed switchingSpecificationsAbsolute Maximum Ratings at Ta=25CPa

 0.12. Size:364K  onsemi
2sa2205.pdf

2SA22
2SA22

Ordering number : ENA0544A2SA2205Bipolar Transistorhttp://onsemi.com-100V, -2A, Low VCE(sat), PNP Single TP/TP-FAApplications DC / DC converter, Relay drivers, lamp drivers, motor driversFeatures Adoption of FBET, MBIT processes Large current capacity Low collector-to-emitter saturation voltage High-speed switching High allowable power dissipationSp

 0.13. Size:239K  onsemi
2sa2222sg.pdf

2SA22
2SA22

Ordering number : ENA1799B2SA2222SGBipolar Transistorhttp://onsemi.com ( )50V, 10A, Low VCE sat PNP TO-220F-3FSApplications Relay drivers, lamp drivers, motor driversFeatures Adoption of MBIT process Large current capacity (IC=--10A) Low collector-to-emitter saturation voltage (VCE(sat)=--250mV(typ.)) High-speed switching (tf=22ns(typ.))Specifica

 0.14. Size:277K  onsemi
2sa2202.pdf

2SA22
2SA22

Ordering number : ENA0583A2SA2202Bipolar Transistorhttp://onsemi.com ( )100V, 2A, Low VCE sat PNP Single PCPApplicaitons DC / DC converters, relay drivers, lamp drivers, motor drivers, flashFeatures Adoption of FBET, MBIT processes Large current capacity Low collector to emitter saturation voltage High-speed switching High allowable power dis

 0.15. Size:285K  onsemi
2sa2205-e 2sa2205.pdf

2SA22
2SA22

Ordering number : ENA0544A2SA2205Bipolar Transistorhttp://onsemi.com-100V, -2A, Low VCE(sat), PNP Single TP/TP-FAApplications DC / DC converter, Relay drivers, lamp drivers, motor driversFeatures Adoption of FBET, MBIT processes Large current capacity Low collector-to-emitter saturation voltage High-speed switching High allowable power dissipationSp

 0.16. Size:176K  onsemi
2sa2210-1e.pdf

2SA22
2SA22

Ordering number : ENA0667B2SA2210Bipolar Transistorhttp://onsemi.com ( )50V, 20A, Low VCE sat PNP TO-220F-3SGApplications Relay drivers, lamp drivers, motor drivers.Features Adoption of MBIT processes Large current capacitance Low collector-to-emitter saturation voltage High-speed switchingSpecificationsAbsolute Maximum Ratings at Ta=25CPa

 0.17. Size:228K  sanken-ele
2sa2223a.pdf

2SA22
2SA22

2SA2223AAudio Amplification TransistorFeatures and Benefits Description LAPT (High frequency multi emitter transistor) Sanken LAPT transistors have an innovative design, produced Small package (TO-3P) by adapting advancements in the unique Sanken thin-wafer High power handling capacity, 160 W production technology. These PNP power transistors achieve Improved sound ou

 0.18. Size:228K  sanken-ele
2sa2223.pdf

2SA22
2SA22

2SA2223Audio Amplification TransistorFeatures and Benefits Description LAPT (High frequency multi emitter transistor) Sanken LAPT transistors have an innovative design, produced Small package (TO-3P) by adapting advancements in the unique Sanken thin-wafer High power handling capacity, 160 W production technology. These PNP power transistors achieve Improved sound out

 0.19. Size:218K  inchange semiconductor
2sa2210.pdf

2SA22
2SA22

isc Silicon PNP Power Transistor 2SA2210DESCRIPTIONLarge current capacitanceHigh-speed switching100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSrelay drivers,lamp drivers,motor driversABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage -50 VCBOV Collector-Em

 0.20. Size:216K  inchange semiconductor
2sa2223a.pdf

2SA22
2SA22

isc Silicon PNP Power Transistor 2SA2223ADESCRIPTIONHigh frequency multi emitter transistorSmall package(TO-3P)High power handling capacity ,160WComplement to Type 2SC6145AMinimum Lot-to-Lot variations for robust device performanceand reliable operation.APPLICATIONSSignal transistors for audio amplifiersAudio marketABSOLUTE MAXIMUM RATINGS(Ta=25)SYMBOL P

 0.21. Size:167K  inchange semiconductor
2sa2222sg.pdf

2SA22
2SA22

isc Silicon PNP Power Transistor 2SA2222SGDESCRIPTIONLarge current capacitanceHigh-speed switching100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSrelay drivers,lamp drivers,motor driversABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage -50 VCBOV Collector-

 0.22. Size:191K  inchange semiconductor
2sa2223.pdf

2SA22
2SA22

INCHANGE Semiconductorisc Silicon PNP Power Transistor 2SA2223DESCRIPTIONHigh frequency multi emitter transistorSmall package(TO-3P)High power handling capacity ,160WComplement to Type 2SC6145Minimum Lot-to-Lot variations for robust device performanceand reliable operation.APPLICATIONSSignal transistors for audio amplifiersAudio marketABSOLUTE MAXIMUM RATIN

 0.23. Size:211K  inchange semiconductor
2sa2222.pdf

2SA22
2SA22

INCHANGE Semiconductorisc Silicon PNP Power Transistor 2SA2222DESCRIPTIONLarge current capacitanceHigh speed switchingLow saturation voltageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSRelay drivers,lamp drivers,motor driversABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage -

 0.24. Size:211K  inchange semiconductor
2sa2222 .pdf

2SA22
2SA22

INCHANGE Semiconductorisc Silicon PNP Power Transistor 2SA2222DESCRIPTIONLarge current capacitanceHigh speed switchingLow saturation voltageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSRelay drivers,lamp drivers,motor driversABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage -

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