2SA22 Datasheet. Equivalente

 0.1. Size:165K  toshiba
 2sa2219.pdf

2SA2219 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA2219 Audio Frequency Amplifier Applications Unit mm High collector voltage VCEO = 160 V (min) Small collector output capacitance Cob = 17pF (typ.) High transition frequency fT = 100MHz (typ.) Complementary to 2SC6139 Absolute Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit

 0.2. Size:309K  toshiba
 2sa2206.pdf

2SA2206 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA2206 Power Amplifier Applications Unit mm Power Switching Applications Low collector emitter saturation voltage V = -0.5 V (max) (I = -1A) CE (sat) C High-speed switching t = 300 ns (typ.) stg Complementary to 2SC6124 Absolute Maximum Ratings (Ta = 25 C) Characteristic Symbol Rating Unit Collector-base volt

 0.3. Size:125K  toshiba
 2sa2215.pdf

2SA2215 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA2215 High-Speed Switching Applications Unit mm DC-DC Converter Applications 2.1 0.1 Strobe Applications 1.7 0.1 High DC current gain hFE = 200 to 500 (IC = -0.5 A) Low collector-emitter saturation voltage VCE (sat) = -0.19 V (max) 1 High-speed switching tf = 40 ns (typ.) 3 2 Absolute Maximum Rati

 0.4. Size:165K  toshiba
 2sa2220.pdf

2SA2220 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA2220 Audio Frequency Amplifier Applications Unit mm High collector voltage VCEO = 160 V Small collector output capacitance Cob = 17 pF (typ.) High transition frequency fT = 100 MHz (typ.) Complementary to 2SC6140 Absolute Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit Col

 0.5. Size:126K  toshiba
 2sa2214.pdf

2SA2214 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA2214 High-Speed Switching Applications Unit mm DC-DC Converter Applications 2.1 0.1 Strobe Applications 1.7 0.1 High DC current gain hFE = 200 to 500 (IC = -1.5 A) Low collector-emitter saturation voltage VCE (sat) = -0.14 V (max) 1 High-speed switching tf = 37 ns (typ.) 3 2 Absolute Maximum Rati

 0.6. Size:53K  sanyo
 2sa2210.pdf

Ordering number ENA0667 2SA2210 SANYO Semiconductors DATA SHEET PNP Epitaxial Planar Silicon Transistor 2SA2210 High-Current Switching Applications Applications Relay drivers, lamp drivers, motor drivers. Features Adoption of MBIT processes. Large current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. Specifications Absolute M

 0.7. Size:39K  sanyo
 2sa2205.pdf

Ordering number ENA0544 2SA2205 SANYO Semiconductors DATA SHEET PNP Epitaxial Planar Silicon Transistor 2SA2205 High-Voltage Switching Applications Applications DC / DC converter, Relay drivers, lamp drivers, motor drivers. Features Adoption of FBET, MBIT processes. Large current capacitance. Low collector-to-emitter saturation voltage. High-speed switching.

 0.8. Size:298K  sanyo
 2sa2222sg.pdf

2SA2222SG Ordering number ENA1799 SANYO Semiconductors DATA SHEET PNP Epitaxial Planar Silicon Transistor 2SA2222SG High-Current Switching Applications Applications Relay drivers, lamp drivers, motor drivers Features Adoption of MBIT process Large current capacitance (IC=--10A) Low collector-to-emitter saturation voltage (VCE(sat)=--250mV(typ.)) High-speed swi

 0.9. Size:58K  sanyo
 2sa2202.pdf

Ordering number ENA0583 2SA2202 SANYO Semiconductors DATA SHEET PNP Epitaxial Planar Silicon Transistor 2SA2202 High-Voltage Switching Applications Applications DC / DC converters, relay drivers, lamp drivers, motor drivers, flash. Features Adoption of FBET, MBIT processes. Large current capacitance. Low collector-to-emitter saturation voltage. High-speed switc

 0.10. Size:69K  sanyo
 2sa2222.pdf

Ordering number ENA1148 2SA2222 SANYO Semiconductors DATA SHEET PNP Epitaxial Planar Silicon Transistor 2SA2222 High-Current Switching Applications Applications Relay drivers, lamp drivers, motor drivers. Features Adoption of MBIT process. Large current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. Specifications Absolute Max

 0.11. Size:241K  onsemi
 2sa2210.pdf

Ordering number ENA0667B 2SA2210 Bipolar Transistor http //onsemi.com ( ) 50V, 20A, Low VCE sat PNP TO-220F-3SG Applications Relay drivers, lamp drivers, motor drivers. Features Adoption of MBIT processes Large current capacitance Low collector-to-emitter saturation voltage High-speed switching Specifications Absolute Maximum Ratings at Ta=25 C Pa

 0.12. Size:364K  onsemi
 2sa2205.pdf

Ordering number ENA0544A 2SA2205 Bipolar Transistor http //onsemi.com -100V, -2A, Low VCE(sat), PNP Single TP/TP-FA Applications DC / DC converter, Relay drivers, lamp drivers, motor drivers Features Adoption of FBET, MBIT processes Large current capacity Low collector-to-emitter saturation voltage High-speed switching High allowable power dissipation Sp

 0.13. Size:239K  onsemi
 2sa2222sg.pdf

Ordering number ENA1799B 2SA2222SG Bipolar Transistor http //onsemi.com ( ) 50V, 10A, Low VCE sat PNP TO-220F-3FS Applications Relay drivers, lamp drivers, motor drivers Features Adoption of MBIT process Large current capacity (IC=--10A) Low collector-to-emitter saturation voltage (VCE(sat)=--250mV(typ.)) High-speed switching (tf=22ns(typ.)) Specifica

 0.14. Size:277K  onsemi
 2sa2202.pdf

Ordering number ENA0583A 2SA2202 Bipolar Transistor http //onsemi.com ( ) 100V, 2A, Low VCE sat PNP Single PCP Applicaitons DC / DC converters, relay drivers, lamp drivers, motor drivers, flash Features Adoption of FBET, MBIT processes Large current capacity Low collector to emitter saturation voltage High-speed switching High allowable power dis

 0.15. Size:285K  onsemi
 2sa2205-e 2sa2205.pdf

Ordering number ENA0544A 2SA2205 Bipolar Transistor http //onsemi.com -100V, -2A, Low VCE(sat), PNP Single TP/TP-FA Applications DC / DC converter, Relay drivers, lamp drivers, motor drivers Features Adoption of FBET, MBIT processes Large current capacity Low collector-to-emitter saturation voltage High-speed switching High allowable power dissipation Sp

 0.16. Size:176K  onsemi
 2sa2210-1e.pdf

Ordering number ENA0667B 2SA2210 Bipolar Transistor http //onsemi.com ( ) 50V, 20A, Low VCE sat PNP TO-220F-3SG Applications Relay drivers, lamp drivers, motor drivers. Features Adoption of MBIT processes Large current capacitance Low collector-to-emitter saturation voltage High-speed switching Specifications Absolute Maximum Ratings at Ta=25 C Pa

 0.17. Size:228K  sanken-ele
 2sa2223a.pdf

2SA2223A Audio Amplification Transistor Features and Benefits Description LAPT (High frequency multi emitter transistor) Sanken LAPT transistors have an innovative design, produced Small package (TO-3P) by adapting advancements in the unique Sanken thin-wafer High power handling capacity, 160 W production technology. These PNP power transistors achieve Improved sound ou

 0.18. Size:228K  sanken-ele
 2sa2223.pdf

2SA2223 Audio Amplification Transistor Features and Benefits Description LAPT (High frequency multi emitter transistor) Sanken LAPT transistors have an innovative design, produced Small package (TO-3P) by adapting advancements in the unique Sanken thin-wafer High power handling capacity, 160 W production technology. These PNP power transistors achieve Improved sound out

 0.19. Size:218K  inchange semiconductor
 2sa2210.pdf

isc Silicon PNP Power Transistor 2SA2210 DESCRIPTION Large current capacitance High-speed switching 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS relay drivers,lamp drivers,motor drivers ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage -50 V CBO V Collector-Em

 0.20. Size:216K  inchange semiconductor
 2sa2223a.pdf

isc Silicon PNP Power Transistor 2SA2223A DESCRIPTION High frequency multi emitter transistor Small package(TO-3P) High power handling capacity ,160W Complement to Type 2SC6145A Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS Signal transistors for audio amplifiers Audio market ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL P

 0.21. Size:167K  inchange semiconductor
 2sa2222sg.pdf

isc Silicon PNP Power Transistor 2SA2222SG DESCRIPTION Large current capacitance High-speed switching 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS relay drivers,lamp drivers,motor drivers ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage -50 V CBO V Collector-

 0.22. Size:191K  inchange semiconductor
 2sa2223.pdf

INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA2223 DESCRIPTION High frequency multi emitter transistor Small package(TO-3P) High power handling capacity ,160W Complement to Type 2SC6145 Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS Signal transistors for audio amplifiers Audio market ABSOLUTE MAXIMUM RATIN

 0.23. Size:211K  inchange semiconductor
 2sa2222.pdf

INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA2222 DESCRIPTION Large current capacitance High speed switching Low saturation voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Relay drivers,lamp drivers,motor drivers ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage -

 0.24. Size:211K  inchange semiconductor
 2sa2222 .pdf

INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA2222 DESCRIPTION Large current capacitance High speed switching Low saturation voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Relay drivers,lamp drivers,motor drivers ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage -