2SA505 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SA505
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.55 W
Tensión colector-base (Vcb): 60 V
Tensión colector-emisor (Vce): 50 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 0.8 A
Temperatura operativa máxima (Tj): 125 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 50 MHz
Capacitancia de salida (Cc): 40 pF
Ganancia de corriente contínua (hfe): 40
Paquete / Cubierta: X104-1
Búsqueda de reemplazo de transistor bipolar 2SA505
2SA505 Datasheet (PDF)
2sa496 2sa505.pdf
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2sa505.pdf
isc Silicon PNP Power Transistor 2SA505DESCRIPTIONCollector-Emitter Breakdown Voltage-V = -50V (Min.)(BR)CEOCollector-Emitter Saturation Voltage-V = -0.8V (Max.)@ I = -500mACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for medium power amplifier applications.ABSOLUTE MAXIMUM RATINGS(Ta=25)SYMBO
vs-fa72sa50lc.pdf
VS-FA72SA50LCwww.vishay.comVishay SemiconductorsPower MOSFET, 72 AFEATURES Fully isolated package Easy to use and parallel Low on-resistance Dynamic dV/dt rating Fully avalanche rated Simple drive requirements Low gate charge deviceSOT-227 Low drain to case capacitance Low internal inductance UL approved file E78996 Designed for
Otros transistores... 2SA503 , 2SA503G , 2SA503O , 2SA503Y , 2SA504 , 2SA504G , 2SA504O , 2SA504Y , SS8050 , 2SA505O , 2SA505R , 2SA505Y , 2SA506 , 2SA507 , 2SA508 , 2SA509 , 2SA509G .
