2SA505O Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SA505O

Material: Si

Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.55 W

Tensión colector-base (Vcb): 60 V

Tensión colector-emisor (Vce): 50 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 0.8 A

Temperatura operativa máxima (Tj): 125 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 50 MHz

Capacitancia de salida (Cc): 40 pF

Ganancia de corriente contínua (hFE): 70

Encapsulados: TO126

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2SA505O datasheet

 8.1. Size:94K  toshiba
 2sa496 2sa505.pdf pdf_icon

2SA505O

This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer

 8.2. Size:214K  inchange semiconductor
 2sa505.pdf pdf_icon

2SA505O

isc Silicon PNP Power Transistor 2SA505 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -50V (Min.) (BR)CEO Collector-Emitter Saturation Voltage- V = -0.8V (Max.)@ I = -500mA CE(sat) C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for medium power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBO

 9.1. Size:756K  1
 2sa509.pdf pdf_icon

2SA505O

 9.2. Size:306K  vishay
 vs-fa72sa50lc.pdf pdf_icon

2SA505O

VS-FA72SA50LC www.vishay.com Vishay Semiconductors Power MOSFET, 72 A FEATURES Fully isolated package Easy to use and parallel Low on-resistance Dynamic dV/dt rating Fully avalanche rated Simple drive requirements Low gate charge device SOT-227 Low drain to case capacitance Low internal inductance UL approved file E78996 Designed for

MOSTRAR MÁS

Otros transistores... 2SA503G, 2SA503O, 2SA503Y, 2SA504, 2SA504G, 2SA504O, 2SA504Y, 2SA505, BC547B, 2SA505R, 2SA505Y, 2SA506, 2SA507, 2SA508, 2SA509, 2SA509G, 2SB562-C