All Transistors. 2SA505O Datasheet


2SA505O Datasheet, Equivalent, Cross Reference Search

Type Designator: 2SA505O

Material of Transistor: Si

Polarity: PNP

Maximum Collector Power Dissipation (Pc): 0.55 W

Maximum Collector-Base Voltage |Vcb|: 60 V

Maximum Collector-Emitter Voltage |Vce|: 50 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 0.8 A

Max. Operating Junction Temperature (Tj): 125 °C

Transition Frequency (ft): 50 MHz

Collector Capacitance (Cc): 40 pF

Forward Current Transfer Ratio (hFE), MIN: 70

Noise Figure, dB: -

Package: X104-1

2SA505O Transistor Equivalent Substitute - Cross-Reference Search


2SA505O Datasheet (PDF)

8.1. 2sa496 2sa505.pdf Size:94K _toshiba

2SA505O 2SA505O

This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer

8.2. 2sa505.pdf Size:214K _inchange_semiconductor

2SA505O 2SA505O

isc Silicon PNP Power Transistor 2SA505DESCRIPTIONCollector-Emitter Breakdown Voltage-V = -50V (Min.)(BR)CEOCollector-Emitter Saturation Voltage-V = -0.8V (Max.)@ I = -500mACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for medium power amplifier applications.ABSOLUTE MAXIMUM RATINGS(Ta=25)SYMBO

 9.1. vs-fa72sa50lc.pdf Size:306K _vishay

2SA505O 2SA505O

VS-FA72SA50LCwww.vishay.comVishay SemiconductorsPower MOSFET, 72 AFEATURES Fully isolated package Easy to use and parallel Low on-resistance Dynamic dV/dt rating Fully avalanche rated Simple drive requirements Low gate charge deviceSOT-227 Low drain to case capacitance Low internal inductance UL approved file E78996 Designed for

Datasheet: 2SA503G , 2SA503O , 2SA503Y , 2SA504 , 2SA504G , 2SA504O , 2SA504Y , 2SA505 , 2SC2078 , 2SA505R , 2SA505Y , 2SA506 , 2SA507 , 2SA508 , 2SA509 , 2SA509G , 2SB562-C .


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