2SA507 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SA507

Material: Ge

Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.075 W

Tensión colector-base (Vcb): 20 V

Tensión colector-emisor (Vce): 18 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 0.005 A

Temperatura operativa máxima (Tj): 85 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 120 MHz

Capacitancia de salida (Cc): 2 pF

Ganancia de corriente contínua (hFE): 20

Encapsulados: TO72

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2SA507 datasheet

 9.1. Size:756K  1
 2sa509.pdf pdf_icon

2SA507

 9.2. Size:94K  toshiba
 2sa496 2sa505.pdf pdf_icon

2SA507

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 9.3. Size:306K  vishay
 vs-fa72sa50lc.pdf pdf_icon

2SA507

VS-FA72SA50LC www.vishay.com Vishay Semiconductors Power MOSFET, 72 A FEATURES Fully isolated package Easy to use and parallel Low on-resistance Dynamic dV/dt rating Fully avalanche rated Simple drive requirements Low gate charge device SOT-227 Low drain to case capacitance Low internal inductance UL approved file E78996 Designed for

 9.4. Size:214K  inchange semiconductor
 2sa505.pdf pdf_icon

2SA507

isc Silicon PNP Power Transistor 2SA505 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -50V (Min.) (BR)CEO Collector-Emitter Saturation Voltage- V = -0.8V (Max.)@ I = -500mA CE(sat) C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for medium power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBO

MOSTRAR MÁS

Otros transistores... 2SA504G, 2SA504O, 2SA504Y, 2SA505, 2SA505O, 2SA505R, 2SA505Y, 2SA506, 2SC828, 2SA508, 2SA509, 2SA509G, 2SB562-C, 2SA509GTM, 2SA509O, 2SA509Y, 2SA51