All Transistors. 2SA507 Datasheet

 

2SA507 Datasheet, Equivalent, Cross Reference Search


   Type Designator: 2SA507
   Material of Transistor: Ge
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 0.075 W
   Maximum Collector-Base Voltage |Vcb|: 20 V
   Maximum Collector-Emitter Voltage |Vce|: 18 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.005 A
   Max. Operating Junction Temperature (Tj): 85 °C
   Transition Frequency (ft): 120 MHz
   Collector Capacitance (Cc): 2 pF
   Forward Current Transfer Ratio (hFE), MIN: 20
   Noise Figure, dB: -
   Package: TO72

 2SA507 Transistor Equivalent Substitute - Cross-Reference Search

   

2SA507 Datasheet (PDF)

 9.1. Size:756K  1
2sa509.pdf

2SA507 2SA507

 9.2. Size:94K  toshiba
2sa496 2sa505.pdf

2SA507 2SA507

This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer

 9.3. Size:306K  vishay
vs-fa72sa50lc.pdf

2SA507 2SA507

VS-FA72SA50LCwww.vishay.comVishay SemiconductorsPower MOSFET, 72 AFEATURES Fully isolated package Easy to use and parallel Low on-resistance Dynamic dV/dt rating Fully avalanche rated Simple drive requirements Low gate charge deviceSOT-227 Low drain to case capacitance Low internal inductance UL approved file E78996 Designed for

 9.4. Size:214K  inchange semiconductor
2sa505.pdf

2SA507 2SA507

isc Silicon PNP Power Transistor 2SA505DESCRIPTIONCollector-Emitter Breakdown Voltage-V = -50V (Min.)(BR)CEOCollector-Emitter Saturation Voltage-V = -0.8V (Max.)@ I = -500mACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for medium power amplifier applications.ABSOLUTE MAXIMUM RATINGS(Ta=25)SYMBO

Datasheet: 2SA504G , 2SA504O , 2SA504Y , 2SA505 , 2SA505O , 2SA505R , 2SA505Y , 2SA506 , 2SC6090LS , 2SA508 , 2SA509 , 2SA509G , 2SB562-C , 2SA509GTM , 2SA509O , 2SA509Y , 2SA51 .

 

 
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