2SA621
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SA621
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.4
W
Tensión colector-base (Vcb): 60
V
Tensión emisor-base (Veb): 5
V
Corriente del colector DC máxima (Ic): 0.2
A
Temperatura operativa máxima (Tj): 175
°C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 100
MHz
Capacitancia de salida (Cc): 6
pF
Ganancia de corriente contínua (hfe): 80
Paquete / Cubierta:
TO39
Búsqueda de reemplazo de transistor bipolar 2SA621
2SA621
Datasheet (PDF)
9.1. Size:145K jmnic
2sa626.pdf 
JMnic Product Specification Silicon PNP Power Transistors 2SA626 DESCRIPTION With TO-3 package Wide area of safe operation High current capability:IC=-6A APPLICATIONS For audio frequency output applications PINNING(see Fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol3 CollectorAbsolute maximum ratings(Ta=) SYMBOL PARAMETER
9.2. Size:145K jmnic
2sa627.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SA627 DESCRIPTION With TO-3 package Wide area of safe operation High current capability:IC=-7A APPLICATIONS For audio frequency output applications PINNING(see Fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol3 CollectorAbsolute maximum ratings(Ta=) SYMBOL PARAMETER
9.3. Size:212K inchange semiconductor
2sa626.pdf
isc Silicon PNP Power Transistors 2SA626DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -70V(Min.)(BR)CEOLow Collector Saturation Voltage-: V = -1.5V(Max.)@ I = -5ACE(sat) CGood Linearity of hFEMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSAudio frequency power amplifier and low speed switchingSuitable f
9.4. Size:215K inchange semiconductor
2sa627.pdf
isc Silicon PNP Power Transistors 2SA627DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -80V(Min.)(BR)CEOLow Collector Saturation Voltage-: V = -1.5V(Max.)@ I = -5ACE(sat) CGood Linearity of hFEMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSAudio frequency power amplifier and low speed switchingSuitable f
Otros transistores... 2N3200
, 2N3201
, 2N3202
, 2N3203
, 2N3204
, 2N3205
, 2N3206
, 2N3207
, B772
, 2N3209
, 2N3209AQF
, 2N3209CSM
, 2N3209DCSM
, 2N3209L
, 2N321
, 2N3210
, 2N3211
.
