2SA659NP Todos los transistores

JMnic Product Specification Silicon PNP Power Transistors 2SA658 DESCRIPTION With TO-3 package Wide area of safe operation Complement to type 2SC521 APPLICATIONS For audio frequency and power amplifier applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolute maximum ratings(Ta= ) SYMBOL... See More ⇒

JMnic Product Specification Silicon PNP Power Transistors 2SA656 DESCRIPTION With TO-3 package Wide area of safe operation Complement to type 2SC519 APPLICATIONS For audio frequency and power amplifier applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolute maximum ratings(Ta= ) SYMBOL... See More ⇒

JMnic Product Specification Silicon PNP Power Transistors 2SA657 DESCRIPTION With TO-3 package Wide area of safe operation Complement to type 2SC520 APPLICATIONS For audio frequency and power amplifier applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolute maximum ratings(Ta= ) SYMBOL... See More ⇒

isc Silicon PNP Power Transistor 2SA658 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -50V(Min.) (BR)CEO Complement to Type 2SC521 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications. Power switching applications. DC-DC converter applications. Regulator applications. ABSOLUTE MAXIMUM RAT... See More ⇒

isc Silicon PNP Power Transistor 2SA651 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -150V(Min.) (BR)CEO Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio power amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltag... See More ⇒

isc Silicon PNP Power Transistor 2SA650 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -150V(Min.) (BR)CEO Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio power amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltag... See More ⇒

isc Silicon PNP Power Transistor 2SA656 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -110V(Min.) (BR)CEO Complement to Type 2SC519 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications. Power switching applications. DC-DC converter applications. Regulator applications. ABSOLUTE MAXIMUM RA... See More ⇒

isc Silicon PNP Power Transistor 2SA652 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -100V(Min.) (BR)CEO Contunuous Collector Current I = -1A C Power DissipationP = 15W @T = 25 C C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifier color TV vertical deflection output appli... See More ⇒

isc Silicon PNP Power Transistor 2SA653 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -120V(Min.) (BR)CEO Contunuous Collector Current I = -1A C Power Dissipation P = 15W @T = 25 C C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifier color TV vertical deflection output appl... See More ⇒

isc Silicon PNP Power Transistor 2SA657 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -80V(Min.) (BR)CEO Complement to Type 2SC520 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications. Power switching applications. DC-DC converter applications. Regulator applications. ABSOLUTE MAXIMUM RAT... See More ⇒