Биполярный транзистор 2SA659NP - описание производителя. Основные параметры. Даташиты.
Наименование производителя: 2SA659NP
Тип материала: Si
Полярность: PNP
Максимальная рассеиваемая мощность (Pc): 0.3 W
Макcимально допустимое напряжение коллектор-база (Ucb): 50 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 50 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 4 V
Макcимальный постоянный ток коллектора (Ic): 0.2 A
Предельная температура PN-перехода (Tj): 150 °C
Граничная частота коэффициента передачи тока (ft): 60 MHz
Статический коэффициент передачи тока (hfe): 100
Корпус транзистора: TO92
2SA659NP Datasheet (PDF)
2sa658.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SA658 DESCRIPTION With TO-3 package Wide area of safe operation Complement to type 2SC521 APPLICATIONS For audio frequency and power amplifier applications PINNING(see Fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol3 CollectorAbsolute maximum ratings(Ta=) SYMBOL
2sa656.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SA656 DESCRIPTION With TO-3 package Wide area of safe operation Complement to type 2SC519 APPLICATIONS For audio frequency and power amplifier applications PINNING(see Fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol3 CollectorAbsolute maximum ratings(Ta=) SYMBOL
2sa657.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SA657 DESCRIPTION With TO-3 package Wide area of safe operation Complement to type 2SC520 APPLICATIONS For audio frequency and power amplifier applications PINNING(see Fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol3 CollectorAbsolute maximum ratings(Ta=) SYMBOL
2sa658.pdf
isc Silicon PNP Power Transistor 2SA658DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -50V(Min.)(BR)CEOComplement to Type 2SC521Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applications.Power switching applications.DC-DC converter applications.Regulator applications.ABSOLUTE MAXIMUM RAT
2sa651.pdf
isc Silicon PNP Power Transistor 2SA651DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -150V(Min.)(BR)CEOWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltag
2sa650.pdf
isc Silicon PNP Power Transistor 2SA650DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -150V(Min.)(BR)CEOWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltag
2sa656.pdf
isc Silicon PNP Power Transistor 2SA656DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -110V(Min.)(BR)CEOComplement to Type 2SC519Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applications.Power switching applications.DC-DC converter applications.Regulator applications.ABSOLUTE MAXIMUM RA
2sa652.pdf
isc Silicon PNP Power Transistor 2SA652DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -100V(Min.)(BR)CEOContunuous Collector Current I = -1ACPower DissipationP = 15W @T = 25C CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifier color TV verticaldeflection output appli
2sa653.pdf
isc Silicon PNP Power Transistor 2SA653DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -120V(Min.)(BR)CEOContunuous Collector Current I = -1ACPower Dissipation P = 15W @T = 25C CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifier color TV verticaldeflection output appl
2sa657.pdf
isc Silicon PNP Power Transistor 2SA657DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -80V(Min.)(BR)CEOComplement to Type 2SC520Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applications.Power switching applications.DC-DC converter applications.Regulator applications.ABSOLUTE MAXIMUM RAT
Другие транзисторы... 2SA1179M4 , 2SA1179M5 , 2SA1179M6 , 2SA1179M7 , 2SA118 , 2SA1180 , 2SA1180A , 2SA1182 , 2N3055 , 2SA1182Y , 2SA1183 , 2SA1184 , 2SA1185 , 2SA1186 , 2SA1186O , 2SA1186P , 2SA1186Y .
Список транзисторов
Обновления
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050