1802 Todos los transistores

Order this document MOTOROLA by MJE18002D2/D SEMICONDUCTOR TECHNICAL DATA MJE18002D2 Advance Information POWER TRANSISTORS 2 AMPERES High Speed, High Gain Bipolar 1000 VOLTS NPN Power Transistor with 50 WATTS Integrated Collector-Emitter Diode and Built-in Efficient Antisaturation Network The MJE18002D2 use a newly developed technology, so called H2BIP*, to design the state of a

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 ED1802 PNP general purpose transistor 1999 Apr 27 Product specification Supersedes data of 1997 May 27 Philips Semiconductors Product specification PNP general purpose transistor ED1802 FEATURES PINNING Low current (max. 500 mA) PIN DESCRIPTION Low voltage (max. 25 V). 1 emitter 2 base APPLICATIONS 3 collector

ST1802FH HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR NEW Fully Plastic TO-220 for HIGH VOLTAGE APPLICATIONS NEW SERIES, ENHANCED PERFORMANCE EASY MOUNTING HIGH VOLTAGE CAPABILITY ( > 1500 V ) HIGH SWITCHING SPEED TIGTHER hfe CONTROL IMPROVED RUGGEDNESS FULLY MOLDED INSULATED PACKAGE (U.L. COMPLIANT) FOR EASY MOUNTING CREEPAGE DISTANCE PATH > 4 mm TO-220FH APPL

ST1802HI HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR NEW SERIES, ENHANCHED PERFORMANCE FULLY INSULATED PACKAGE FOR EASY MOUNTING HIGH VOLTAGE CAPABILITY HIGH SWITCHING SPEED TIGTHER hfe CONTROL IMPROVED RUGGEDNESS 3 2 APPLICATIONS 1 HORIZONTAL DEFLECTION FOR COLOR TV ISOWATT218 DESCRIPTION The ST1802HI is manufactured using collector diffused technology

STD1802 Low voltage fast-switching NPN power transistor Features Very low collector to emitter saturation voltage High current gain characteristic Fast-switching speed Surface-mounting DPAK (TO-252) power 3 package in tape & reel (suffix T4) 1 TO-252 Description DPAK The device is manufactured in Planar technology (suffix T4 ) with Base Island l

MD1802FX High voltage NPN power transistor for standard definition CRT display Features State-of-the-art technology Diffused collector Enhanced generation Stable performances versus operating temperature variation Low base-drive requirements 3 2 Tight hFE range at operating collector current 1 Fully insulated power package U.L. compliant ISOWATT218F

STD1802T4-A Low voltage fast-switching NPN power transistor Features This device is qualified for automotive application Very low collector to emitter saturation voltage High current gain characteristic 3 Fast-switching speed 1 Surface-mounting DPAK (TO-252) power TO-252 package in tape & reel (suffix T4) DPAK (suffix T4 ) Description The device

ST1802HI HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR NEW SERIES, ENHANCED PERFORMANCE FULLY INSULATED PACKAGE (U.L. COMPLIANT) FOR EASY MOUNTING HIGH VOLTAGE CAPABILITY (> 1500 V) HIGH SWITCHING SPEED TIGTHER hfe CONTROL IMPROVED RUGGEDNESS 3 APPLICATIONS 2 HORIZONTAL DEFLECTION FOR COLOR 1 TVs UP TO 25 INCHES ISOWATT218 DESCRIPTION The device is manufactur

2SA1802 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA1802 Strobe Flash Applications Unit mm Medium Power Amplifier Applications Excellent hFE linearity h = 200 to 600 (V = -2 V, I = -0.5 A) FE (1) CE C h = 140 (min), 200 (typ.) (V = -2 V, I = -3 A) FE (2) CE C Low collector saturation voltage V = -0.5 V (max) (I = -3 A, I = -60 mA) CE (sat) C B C

Ordering number EN2113B PNP/NPN Epitaxial Planar Silicon Transistors 2SB1202/2SD1802 High-Current Switching Applications Applications Package Dimensions Voltage regulators, relay drivers, lamp drivers, unit mm electrical equipment. 2045B [2SB1202/2SD1802] Features Adoption of FBET, MBIT processes. Large currrent capacity and wide ASO. Low collector-to-emitter satura

Ordering number ENN2113B PNP/NPN Epitaxial Planar Silicon Transistors 2SB1202/2SD1802 High-Current Switching Applications Applications Package Dimensions Voltage regulators, relay drivers, lamp drivers, unit mm electrical equipment. 2045B [2SB1202/2SD1802] 6.5 Features 2.3 5.0 0.5 4 Adoption of FBET, MBIT processes. Large currrent capacity and wide ASO. Low col

MJW18020 NPN Silicon Power Transistors High Voltage Planar The MJW18020 planar High Voltage Power Transistor is specifically Designed for motor control applications, high power http //onsemi.com supplies and UPS s for which the high reproducibility of DC and Switching parameters minimizes the dead time in bridge 30 AMPERES configurations. 1000 VOLTS BVCES Features 450 VOLTS BVCEO

2SB1202/2SD1802 Bipolar Transistor ( )50 V, ( )3 A, Low VCE(sat) (PNP)NPN Single TP/TP-FA Features www.onsemi.com Adoption of FBET and MBIT Processes Large Current Capacitance and Wide ASO 2.4 Low Collector to Emitter Saturation Voltage Fast Switching Speed 1 Small and Slim Package Making it Easy to Make 2SB1202/2SD1802-used Sets Smaller 3 These Devices

UNISONIC TECHNOLOGIES CO., LTD 2SD1802 NPN SILICON TRANSISTOR HIGH CURRENT SWITCHING APPLICATION DESCRIPTION The UTC 2SD1802 applies to voltage regulators, relay drivers, lamp drivers and electrical equipment. FEATURES * Adoption of FBET, MBIT processes * Large current capacity and wide ASO * Low collector-to-emitter saturation voltage * Fast switching speed ORDERI

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-252-2L Plastic-Encapsulate Transistors TO-252 -2L 2SD1802 TRANSISTOR (NPN) FEATURES 1.BASE Adoption of FBET,MBIT Processes 2.COLLECTOR Large Current Capacity and Wide ASO Low Collector-to-Emitter Saturation Voltage 3.EMITTER Fast Switching Speed MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Para

2SD1802(NPN) TO-251/TO-252-2L Transistor TO-251 1.BASE 2.COLLECTOR 3.EMITTER 1 2 3 Features Adoption of FBET,MBIT processes Large current capacity and wide ASO Low collector-to-emitter saturation voltage Fast switching speed TO-252-2L MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector Base Voltage 60 V VCEO Collector-Emi

2SD1802 NPN PLASTIC ENCAPSULATE TRANSISTORS P b Lead(Pb)-Free 1.BASE 3 2.COLLECTOR 2 3.EMITTER 1 D-PAK(TO-252) ABSOLUTE MAXIMUM RATINGS (TA=25 C) Rating Symbol Limits Unit VCBO V Collector-Base Voltage 60 VCEO V Collector-Emitter Voltage 50 VEBO V Emitter-Base Voltage 6.0 Collector Current IC A 3.0 Collector Power Dissipation PD 1.0 W Junction Temperature Tj -55 to +

AP1802GU Pb Free Plating Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Capable of 2.5V gate drive BVDSS 20V D D Lower on-resistance RDS(ON) 32m D D Surface mount package ID 5.8A G S S S 2021-8 Description D Advanced Power MOSFETs utilized advanced processing techniques to achieve

SMD Type Transistors NPN Transistors 2SD1802 TO-252 Unit mm +0.15 6.50-0.15 +0.1 2.30 -0.1 +0.2 5.30-0.2 +0.8 Features 0.50 -0.7 Low Collector-to-Emitter Saturation Voltage Fast Switching Speed Large Current Capacity and Wide ASO 0.127 +0.1 0.80-0.1 max Complementary to 2SB1202 + 0.1 1 Base 2.3 0.60- 0.1 +0.15 4.60 -0.15 2 Collector 3 Emitter

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD1802 DESCRIPTION Large current capacitance and wide ASO Small and slim package making it easy to make2SD1802/ 2SB1202-used set smaller Low collector-to-emitter saturation voltage Fast switching speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATION

isc Silicon NPN Power Transistor STD1802 DESCRIPTION Low Collector-Emitter Saturation Voltage- V )= 0.4V(Max)( I = 3A; I = 0.15A) CE(sat C B DC Current Gain -h = 100(Min)@ I = 3A FE C Fast -Switching speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS CCFL dirvers Voltage regulators Relay dirvers High efficiency l

isc Silicon NPN Power Transistor MD1802FX DESCRIPTION High Voltage Low base-drive requirements Collector-Emitter Sustaining Voltage- V = 700V (Min) CEO(SUS) Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Horizontal deflection output for TV Switch mode power supplies for CRT TV ABSOLUTE MAXIMUM RATINGS(T =25 ) a SY