1802 Datasheet, Equivalent, Cross Reference Search

Order this documentMOTOROLAby MJE18002D2/DSEMICONDUCTOR TECHNICAL DATAMJE18002D2Advance InformationPOWER TRANSISTORS2 AMPERESHigh Speed, High Gain Bipolar1000 VOLTSNPN Power Transistor with50 WATTSIntegrated Collector-EmitterDiode and Built-in EfficientAntisaturation NetworkThe MJE18002D2 use a newly developed technology, so called H2BIP*, to designthe state of a

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D186ED1802PNP general purpose transistor1999 Apr 27Product specificationSupersedes data of 1997 May 27Philips Semiconductors Product specificationPNP general purpose transistor ED1802FEATURES PINNING Low current (max. 500 mA)PIN DESCRIPTION Low voltage (max. 25 V).1 emitter2 baseAPPLICATIONS3 collector

ST1802FHHIGH VOLTAGE FAST-SWITCHINGNPN POWER TRANSISTOR NEW Fully Plastic TO-220 for HIGHVOLTAGE APPLICATIONS NEW SERIES, ENHANCED PERFORMANCE EASY MOUNTING HIGH VOLTAGE CAPABILITY ( > 1500 V ) HIGH SWITCHING SPEED TIGTHER hfe CONTROL IMPROVED RUGGEDNESS FULLY MOLDED INSULATED PACKAGE(U.L. COMPLIANT) FOR EASY MOUNTING CREEPAGE DISTANCE PATH > 4 mmTO-220FHAPPL

ST1802HIHIGH VOLTAGE FAST-SWITCHINGNPN POWER TRANSISTOR NEW SERIES, ENHANCHEDPERFORMANCE FULLY INSULATED PACKAGE FOR EASYMOUNTING HIGH VOLTAGE CAPABILITY HIGH SWITCHING SPEED TIGTHER hfe CONTROL IMPROVED RUGGEDNESS32APPLICATIONS: 1 HORIZONTAL DEFLECTION FOR COLORTV ISOWATT218DESCRIPTION The ST1802HI is manufactured using collectordiffused technology

STD1802Low voltage fast-switching NPN power transistorFeatures Very low collector to emitter saturation voltage High current gain characteristic Fast-switching speed Surface-mounting DPAK (TO-252) power 3package in tape & reel (suffix T4)1 TO-252Description DPAKThe device is manufactured in Planar technology (suffix T4)with Base Island l

MD1802FXHigh voltage NPN power transistor for standarddefinition CRT displayFeatures State-of-the-art technology: Diffused collector Enhanced generation Stable performances versus operating temperature variation Low base-drive requirements32 Tight hFE range at operating collector current1 Fully insulated power package U.L. compliantISOWATT218F

STD1802T4-ALow voltage fast-switching NPN power transistorFeatures This device is qualified for automotive application Very low collector to emitter saturation voltage High current gain characteristic3 Fast-switching speed1 Surface-mounting DPAK (TO-252) power TO-252package in tape & reel (suffix T4) DPAK (suffix T4)DescriptionThe device

ST1802HIHIGH VOLTAGE FAST-SWITCHINGNPN POWER TRANSISTOR NEW SERIES, ENHANCED PERFORMANCE FULLY INSULATED PACKAGE (U.L.COMPLIANT) FOR EASY MOUNTING HIGH VOLTAGE CAPABILITY (> 1500 V) HIGH SWITCHING SPEED TIGTHER hfe CONTROL IMPROVED RUGGEDNESS3APPLICATIONS: 2 HORIZONTAL DEFLECTION FOR COLOR1TVs UP TO 25 INCHESISOWATT218DESCRIPTION The device is manufactur

2SA1802 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA1802 Strobe Flash Applications Unit: mm Medium Power Amplifier Applications Excellent hFE linearity : h = 200 to 600 (V = -2 V, I = -0.5 A) FE (1) CE C: h = 140 (min), 200 (typ.) (V = -2 V, I = -3 A) FE (2) CE C Low collector saturation voltage : V = -0.5 V (max) (I = -3 A, I = -60 mA) CE (sat) C B C

Ordering number:EN2113BPNP/NPN Epitaxial Planar Silicon Transistors2SB1202/2SD1802High-Current Switching ApplicationsApplications Package Dimensions Voltage regulators, relay drivers, lamp drivers,unit:mmelectrical equipment.2045B[2SB1202/2SD1802]Features Adoption of FBET, MBIT processes. Large currrent capacity and wide ASO. Low collector-to-emitter satura

Ordering number:ENN2113BPNP/NPN Epitaxial Planar Silicon Transistors2SB1202/2SD1802High-Current Switching ApplicationsApplications Package Dimensions Voltage regulators, relay drivers, lamp drivers,unit:mmelectrical equipment.2045B[2SB1202/2SD1802]6.5Features2.35.00.54 Adoption of FBET, MBIT processes. Large currrent capacity and wide ASO. Low col

MJW18020NPN Silicon PowerTransistors High VoltagePlanarThe MJW18020 planar High Voltage Power Transistor isspecifically Designed for motor control applications, high powerhttp://onsemi.comsupplies and UPSs for which the high reproducibility of DC andSwitching parameters minimizes the dead time in bridge30 AMPERESconfigurations.1000 VOLTS BVCESFeatures450 VOLTS BVCEO

2SB1202/2SD1802Bipolar Transistor()50 V, ()3 A, Low VCE(sat) (PNP)NPNSingle TP/TP-FAFeatures www.onsemi.com Adoption of FBET and MBIT Processes Large Current Capacitance and Wide ASO2.4 Low Collector to Emitter Saturation Voltage Fast Switching Speed1 Small and Slim Package Making it Easy to Make2SB1202/2SD1802-used Sets Smaller3 These Devices

UNISONIC TECHNOLOGIES CO., LTD 2SD1802 NPN SILICON TRANSISTOR HIGH CURRENT SWITCHING APPLICATION DESCRIPTION The UTC 2SD1802 applies to voltage regulators, relay drivers, lamp drivers and electrical equipment. FEATURES * Adoption of FBET, MBIT processes * Large current capacity and wide ASO * Low collector-to-emitter saturation voltage * Fast switching speed ORDERI

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-252-2L Plastic-Encapsulate Transistors TO-252 -2L2SD1802 TRANSISTOR (NPN) FEATURES 1.BASE Adoption of FBET,MBIT Processes 2.COLLECTOR Large Current Capacity and Wide ASO Low Collector-to-Emitter Saturation Voltage 3.EMITTER Fast Switching Speed MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Para

2SD1802(NPN) TO-251/TO-252-2L TransistorTO-2511.BASE 2.COLLECTOR 3.EMITTER 1 2 3 Features Adoption of FBET,MBIT processes Large current capacity and wide ASO Low collector-to-emitter saturation voltage Fast switching speed TO-252-2LMAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector Base Voltage 60 V VCEO Collector-Emi

2SD1802NPN PLASTIC ENCAPSULATE TRANSISTORSP b Lead(Pb)-Free1.BASE32.COLLECTOR23.EMITTER 1D-PAK(TO-252)ABSOLUTE MAXIMUM RATINGS (TA=25C)Rating Symbol Limits UnitVCBO VCollector-Base Voltage60VCEOVCollector-Emitter Voltage 50VEBOVEmitter-Base Voltage 6.0Collector CurrentICA3.0Collector Power Dissipation PD 1.0 WJunction TemperatureTj-55 to +

AP1802GU Pb Free Plating Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Capable of 2.5V gate drive BVDSS 20VDD Lower on-resistance RDS(ON) 32mDD Surface mount package ID 5.8AGSSS2021-8DescriptionDAdvanced Power MOSFETs utilized advanced processing techniques toachieve

SMD Type TransistorsNPN Transistors2SD1802TO-252Unit: mm+0.156.50-0.15+0.12.30 -0.1+0.25.30-0.2 +0.8 Features0.50 -0.7 Low Collector-to-Emitter Saturation Voltage Fast Switching Speed Large Current Capacity and Wide ASO0.127+0.10.80-0.1max Complementary to 2SB1202+ 0.11 Base2.3 0.60- 0.1+0.154.60 -0.152 Collector3 Emitter

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD1802DESCRIPTIONLarge current capacitance and wide ASOSmall and slim package making it easy to make2SD1802/ 2SB1202-used set smallerLow collector-to-emitter saturation voltageFast switching speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATION

isc Silicon NPN Power Transistor STD1802DESCRIPTIONLow Collector-Emitter Saturation Voltage-: V )= 0.4V(Max)( I = 3A; I = 0.15A)CE(sat C BDC Current Gain -h = 100(Min)@ I = 3AFE CFast -Switching speedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSCCFL dirversVoltage regulatorsRelay dirversHigh efficiency l

isc Silicon NPN Power Transistor MD1802FXDESCRIPTION High Voltage Low base-drive requirements Collector-Emitter Sustaining Voltage-: V = 700V (Min)CEO(SUS)Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHorizontal deflection output for TVSwitch mode power supplies for CRT TVABSOLUTE MAXIMUM RATINGS(T =25)aSY