2SA722 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Transistor2SA719, 2SA720Silicon PNP epitaxial planer typeFor low-frequency power amplification and driver amplificationUnit: mmComplementary to 2SC1317 and 2SC13185.0 0.2 4.0 0.2FeaturesComplementary pair with 2SC1317 and 2SC1318.Absolute Maximum Ratings (Ta=25C)Parameter Symbol Ratings UnitCollector to 2SA719 30VCBO V+0.2 +0.2base voltage 2SA720 60 0.45

Transistor2SA720ASilicon PNP epitaxial planer typeFor low-frequency driver amplificationUnit: mmComplementary to 2SC1318A5.0 0.2 4.0 0.2FeaturesHigh collector to emitter voltage VCEO.Optimum for the driver stage of a low-frequency and 25 to 30Woutput amplifier.Absolute Maximum Ratings (Ta=25C)Parameter Symbol Ratings Unit+0.2 +0.2Collector to base voltage VCBO

2SA727 -3A, -40V PNP Silicon General Purpose Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen and lead free TSOP-6 FEATURES AE High current output up to -3A L Low saturation voltage 6 5 4MARKING B7 2 7 1 2 3 = Date Code FC HJD G KPACKAGE INFORMATION Millimeter Millimeter REF. REF. Package MPQ Lea

2SA720 -0.5 A, -60 V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free TO-92 FEATURES For low-frequency power amplification and driver amplification. G HEmitterCollector Base CLASSIFICATION OF hFE JA DProduct-Rank 2SA720-Q 2SA720-R 2SA720-SMillimeterREF.B M