2SA722 - Даташиты. Аналоги. Основные параметры

Transistor 2SA719, 2SA720 Silicon PNP epitaxial planer type For low-frequency power amplification and driver amplification Unit mm Complementary to 2SC1317 and 2SC1318 5.0 0.2 4.0 0.2 Features Complementary pair with 2SC1317 and 2SC1318. Absolute Maximum Ratings (Ta=25 C) Parameter Symbol Ratings Unit Collector to 2SA719 30 VCBO V +0.2 +0.2 base voltage 2SA720 60 0.45

Transistor 2SA720A Silicon PNP epitaxial planer type For low-frequency driver amplification Unit mm Complementary to 2SC1318A 5.0 0.2 4.0 0.2 Features High collector to emitter voltage VCEO. Optimum for the driver stage of a low-frequency and 25 to 30W output amplifier. Absolute Maximum Ratings (Ta=25 C) Parameter Symbol Ratings Unit +0.2 +0.2 Collector to base voltage VCBO

2SA727 -3A, -40V PNP Silicon General Purpose Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen and lead free TSOP-6 FEATURES A E High current output up to -3A L Low saturation voltage 6 5 4 MARKING B 7 2 7 1 2 3 = Date Code F C H J D G K PACKAGE INFORMATION Millimeter Millimeter REF. REF. Package MPQ Lea

2SA720 -0.5 A, -60 V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free TO-92 FEATURES For low-frequency power amplification and driver amplification. G H Emitter Collector Base CLASSIFICATION OF hFE J A D Product-Rank 2SA720-Q 2SA720-R 2SA720-S Millimeter REF. B M