2SA765
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SA765
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 40
W
Tensión colector-base (Vcb): 80
V
Tensión colector-emisor (Vce): 80
V
Tensión emisor-base (Veb): 6
V
Corriente del colector DC máxima (Ic): 6
A
Temperatura operativa máxima (Tj): 150
°C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 10
MHz
Ganancia de corriente contínua (hfe): 30
Paquete / Cubierta:
TO66
Búsqueda de reemplazo de transistor bipolar 2SA765
2SA765
Datasheet (PDF)
..1. Size:153K jmnic
2sa765.pdf 

JMnic Product Specification Silicon PNP Power Transistors 2SA765 DESCRIPTION With TO-66 package Low collector saturation voltage APPLICATIONS Desinged for general-purpose power amplifier and applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-66) and symbol 3 Collector Absolute maximum ratings(Ta= ) SYMBOL PARAMETER C
..2. Size:207K inchange semiconductor
2sa765.pdf 

isc Silicon PNP Power Transistor 2SA765 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -80V(Min) (BR)CEO Low Collector Saturation Voltage- V = 1.5V(Max.)@ I = 4A CE(sat) C Complement to Type 2SC1445 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general purpose power amplifier applications ABSOLUTE MA
9.1. Size:69K wingshing
2sa769.pdf 

2SA769 PNP EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY POWER AMPLIFIER TO-220 Complement to 2SC1827 ABSOLUTE MAXIMUM RATINGS (T =25 ) A Characteristic Symbol Rating Unit Collector-Base Voltage VCBO -80 V Collector-Emitter Voltage VCEO -80 V Emitter-Base voltage VEBO -5 V Collector Current (DC) IC -4 A Collector Dissipation (Tc=25 PC 30 W Jun
9.3. Size:147K jmnic
2sa768.pdf 

JMnic Product Specification Silicon PNP Power Transistors 2SA768 DESCRIPTION With TO-220 package Complement to type 2SC1826 APPLICATIONS For low frequency power amplifier applicattions PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220) and symbol 3 Base Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER
9.4. Size:147K jmnic
2sa769.pdf 

JMnic Product Specification Silicon PNP Power Transistors 2SA769 DESCRIPTION With TO-220 package Complement to type 2SC1827 APPLICATIONS For low frequency power amplifier applicattions PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220) and symbol 3 Base Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETE
9.5. Size:153K jmnic
2sa764.pdf 

JMnic Product Specification Silicon PNP Power Transistors 2SA764 DESCRIPTION With TO-66 package Low collector saturation voltage Complement to type 2SC1444 APPLICATIONS Desinged for general-purpose power amplifier and applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-66) and symbol 3 Collector Absolute maximum ratin
9.6. Size:209K inchange semiconductor
2sa766.pdf 

isc Silicon PNP Power Transistor 2SA766 DESCRIPTION Collector-Base Breakdown Voltage- V = -150V(Min) (BR)CBO High Collector Power Dissipation- Complement to Type 2SC1450 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Line-operated vertical deflection output Medium power amplifier ABSOLUTE MAXIMUM RATINGS(T =25 ) a SY
9.7. Size:216K inchange semiconductor
2sa768.pdf 

isc Silicon PNP Power Transistor 2SA768 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -60(V)(Min.) (BR)CEO Complement to Type 2SC1826 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio and general purpose applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Vol
9.8. Size:180K inchange semiconductor
2sa762.pdf 

INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA762 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -110V(Min) (BR)CEO Low Collector Saturation Voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS Designed for general purpose power amplifier applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMET
9.9. Size:216K inchange semiconductor
2sa769.pdf 

isc Silicon PNP Power Transistor 2SA769 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -80(V)(Min.) (BR)CEO Complement to Type 2SC1827 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio and general purpose applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Vol
9.10. Size:208K inchange semiconductor
2sa764.pdf 

isc Silicon PNP Power Transistor 2SA764 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -60V(Min) (BR)CEO Low Collector Saturation Voltage- V = 1.5V(Max.)@ I = 4A CE(sat) C Complement to Type 2SC1444 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general purpose power amplifier applications ABSOLUTE MA
Otros transistores... 2SA761-1
, 2SA761-2
, 2SA761S
, 2SA762
, 2SA762-1
, 2SA762-2
, 2SA763
, 2SA764
, BC548
, 2SA766
, 2SA766S
, 2SA767
, 2SA768
, 2SA769
, 2SA77
, 2SA770
, 2SA771
.
History: 2SC3229
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| DTA044EEB
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