2SA798 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SA798
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.4 W
Tensión colector-base (Vcb): 50 V
Tensión colector-emisor (Vce): 50 V
Tensión emisor-base (Veb): 10 V
Corriente del colector DC máxima (Ic): 0.1 A
Temperatura operativa máxima (Tj): 175 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 50 MHz
Ganancia de corriente contínua (hfe): 250
Paquete / Cubierta: SP9
Búsqueda de reemplazo de transistor bipolar 2SA798
2SA798 Datasheet (PDF)
2sa794.pdf
Power Transistors2SA0794 (2SA794), 2SA0794A (2SA794A)Silicon PNP epitaxial planar typeFor low-frequency output driverUnit: mm8.0+0.50.13.20.2Complementary to 2SC1567, 2SC1567A 3.160.1 Features High collector-emitter voltage (Base open) VCEO Optimum for the driver stage of low-frequency and 40 W to 100 Woutput amplifier TO-126B package which requi
2sa794 2sa794a.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SA794 2SA794A DESCRIPTION With TO-126 package Complement to type 2SC1567/1567A High collector-emitter voltage VCEO APPLICATIONS For low frequency output driver Optimum for the driver stage of low frequency and 40W to 100W output amplifier PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2
2sa794 2sa794a.pdf
Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA794 2SA794A DESCRIPTION With TO-126 package Complement to type 2SC1567/1567A High collector-emitter voltage VCEOAPPLICATIONS For low frequency output driver Optimum for the driver stage of low frequency and 40W to 100W output amplifier PINNING PIN DESCRIPTION1 Emitter Collector;
2sa794a.pdf
isc Product Specificationisc Silicon PNP Power Transistor 2SA794ADESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = -120V(Min)(BR)CEOGood Linearity of hFEComplement to Type 2SC1567AMinimum Lot-to-Lot variations for robust device performanceand reliable operationAPPLICATIONSDesigned for low-frequency high power driver.Optimum for the driver stage of l
2sa795.pdf
isc Silicon PNP Power Transistor 2SA795DESCRIPTIONLarge Collector Power DissipationHigh Collector-Emitter Breakdown Voltage-: V = -150V(Min)(BR)CEOGood Linearity of hFEComplement to Type 2SC1565Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSMedium Power amplifier applicationsABSOLUTE MAXIMUM RATINGS(T =25)a
Otros transistores... 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2N3906 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .
Liste
Recientemente añadidas las descripciónes de los transistores:
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050