2SA798 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SA798
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.4 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 10 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 175 °C
Transition Frequency (ft): 50 MHz
Forward Current Transfer Ratio (hFE), MIN: 250
Noise Figure, dB: -
Package: SP9
2SA798 Transistor Equivalent Substitute - Cross-Reference Search
2SA798 Datasheet (PDF)
2sa794.pdf
Power Transistors2SA0794 (2SA794), 2SA0794A (2SA794A)Silicon PNP epitaxial planar typeFor low-frequency output driverUnit: mm8.0+0.50.13.20.2Complementary to 2SC1567, 2SC1567A 3.160.1 Features High collector-emitter voltage (Base open) VCEO Optimum for the driver stage of low-frequency and 40 W to 100 Woutput amplifier TO-126B package which requi
2sa794 2sa794a.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SA794 2SA794A DESCRIPTION With TO-126 package Complement to type 2SC1567/1567A High collector-emitter voltage VCEO APPLICATIONS For low frequency output driver Optimum for the driver stage of low frequency and 40W to 100W output amplifier PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2
2sa794 2sa794a.pdf
Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA794 2SA794A DESCRIPTION With TO-126 package Complement to type 2SC1567/1567A High collector-emitter voltage VCEOAPPLICATIONS For low frequency output driver Optimum for the driver stage of low frequency and 40W to 100W output amplifier PINNING PIN DESCRIPTION1 Emitter Collector;
2sa794a.pdf
isc Product Specificationisc Silicon PNP Power Transistor 2SA794ADESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = -120V(Min)(BR)CEOGood Linearity of hFEComplement to Type 2SC1567AMinimum Lot-to-Lot variations for robust device performanceand reliable operationAPPLICATIONSDesigned for low-frequency high power driver.Optimum for the driver stage of l
2sa795.pdf
isc Silicon PNP Power Transistor 2SA795DESCRIPTIONLarge Collector Power DissipationHigh Collector-Emitter Breakdown Voltage-: V = -150V(Min)(BR)CEOGood Linearity of hFEComplement to Type 2SC1565Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSMedium Power amplifier applicationsABSOLUTE MAXIMUM RATINGS(T =25)a
Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D209L , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
