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2SA834 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 2SA834
   Material: Si
   Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.25 W
   Tensión colector-base (Vcb): 130 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 0.054 A
   Temperatura operativa máxima (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 90 MHz
   Capacitancia de salida (Cc): 6.5 pF
   Ganancia de corriente contínua (hfe): 120
   Paquete / Cubierta: TO92

 Búsqueda de reemplazo de transistor bipolar 2SA834

 

2SA834 Datasheet (PDF)

 9.1. Size:50K  rohm
2sa830s.pdf

2SA834
2SA834

2SB852K / 2SA830STransistorsTransistors2SD1383K / 2SC1645S(96-118-B20)(96-205-D20)280Appendix NotesNo technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD.The contents described herein are subject to change without notice. The specifications for theproduct described in this document a

 9.2. Size:257K  rohm
2sa790 2sa791 2sa830 2sa831.pdf

2SA834

 9.3. Size:52K  rohm
2sb852k 2sa830s 2sd1383k 2sc1645s.pdf

2SA834
2SA834

2SB852K / 2SA830STransistorsTransistors2SD1383K / 2SC1645S(96-118-B20)(96-205-D20)280Appendix NotesNo technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD.The contents described herein are subject to change without notice. The specifications for theproduct described in this document a

 9.4. Size:41K  panasonic
2sa838 e.pdf

2SA834
2SA834

Transistor2SA838Silicon PNP epitaxial planer typeFor high-frequency amplificationUnit: mmComplementary to 2SC13595.0 0.2 4.0 0.2FeaturesHigh transition frequency fT.Absolute Maximum Ratings (Ta=25C)Parameter Symbol Ratings UnitCollector to base voltage VCBO 30 V+0.2 +0.2Collector to emitter voltage VCEO 20 V 0.45 0.1 0.45 0.11.27 1.27Emitter to ba

 9.5. Size:37K  panasonic
2sa838.pdf

2SA834
2SA834

Transistor2SA838Silicon PNP epitaxial planer typeFor high-frequency amplificationUnit: mmComplementary to 2SC13595.0 0.2 4.0 0.2FeaturesHigh transition frequency fT.Absolute Maximum Ratings (Ta=25C)Parameter Symbol Ratings UnitCollector to base voltage VCBO 30 V+0.2 +0.2Collector to emitter voltage VCEO 20 V 0.45 0.1 0.45 0.11.27 1.27Emitter to ba

 9.6. Size:32K  hitachi
2sa836.pdf

2SA834
2SA834

2SA836Silicon PNP EpitaxialApplicationLow frequency low noise amplifierOutlineTO-92 (1)1. Emitter2. Collector3. Base3212SA836Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 55 VCollector to emitter voltage VCEO 55 VEmitter to base voltage VEBO 5 VCollector current IC 100 mAEmitter current IE 100 mAC

 9.7. Size:42K  no
2sa839.pdf

2SA834

 9.8. Size:156K  jmnic
2sa839.pdf

2SA834
2SA834

JMnic Product Specification Silicon PNP Power Transistors 2SA839 DESCRIPTION With TO-220 package Complement to type 2SC1669 High breakdown voltage APPLICATIONS Audio power amplifier applications Driver stage amplifier applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220) and symbol3 Base

 9.9. Size:145K  jmnic
2sa837.pdf

2SA834
2SA834

JMnic Product Specification Silicon PNP Power Transistors 2SA837 DESCRIPTION With TO-3 package Wide area of safe operation Complement to type 2SC1667 APPLICATIONS For radio frequency and power amplifier applications PINNING(see Fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol3 CollectorAbsolute maximum ratings(Ta=) SYMBO

 9.10. Size:205K  inchange semiconductor
2sa839.pdf

2SA834
2SA834

isc Silicon PNP Power Transistor 2SA839DESCRIPTIONCollector-Emitter Breakdown Voltage: V = -150V(Min)(BR)CEODC Current Gain: h = 40-240@ I = -0.5AFE CComplement to Type 2SC1669Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSAudio power amplifier applications.Driver stage amplifier applications.ABSOLUTE MAXIMUM

 9.11. Size:181K  inchange semiconductor
2sa837.pdf

2SA834
2SA834

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA837 DESCRIPTION With TO-3 package Wide area of safe operation Complement to type 2SC1667 APPLICATIONS For radio frequency and power amplifier applications PINNING(see Fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol3 CollectorAbsolute maximum rating

Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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