2SA834 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SA834
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.25 W
Maximum Collector-Base Voltage |Vcb|: 130 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.054 A
Max. Operating Junction Temperature (Tj): 175 °C
Transition Frequency (ft): 90 MHz
Collector Capacitance (Cc): 6.5 pF
Forward Current Transfer Ratio (hFE), MIN: 120
Noise Figure, dB: -
Package: TO92
2SA834 Transistor Equivalent Substitute - Cross-Reference Search
2SA834 Datasheet (PDF)
2sa830s.pdf
2SB852K / 2SA830STransistorsTransistors2SD1383K / 2SC1645S(96-118-B20)(96-205-D20)280Appendix NotesNo technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD.The contents described herein are subject to change without notice. The specifications for theproduct described in this document a
2sb852k 2sa830s 2sd1383k 2sc1645s.pdf
2SB852K / 2SA830STransistorsTransistors2SD1383K / 2SC1645S(96-118-B20)(96-205-D20)280Appendix NotesNo technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD.The contents described herein are subject to change without notice. The specifications for theproduct described in this document a
2sa838 e.pdf
Transistor2SA838Silicon PNP epitaxial planer typeFor high-frequency amplificationUnit: mmComplementary to 2SC13595.0 0.2 4.0 0.2FeaturesHigh transition frequency fT.Absolute Maximum Ratings (Ta=25C)Parameter Symbol Ratings UnitCollector to base voltage VCBO 30 V+0.2 +0.2Collector to emitter voltage VCEO 20 V 0.45 0.1 0.45 0.11.27 1.27Emitter to ba
2sa838.pdf
Transistor2SA838Silicon PNP epitaxial planer typeFor high-frequency amplificationUnit: mmComplementary to 2SC13595.0 0.2 4.0 0.2FeaturesHigh transition frequency fT.Absolute Maximum Ratings (Ta=25C)Parameter Symbol Ratings UnitCollector to base voltage VCBO 30 V+0.2 +0.2Collector to emitter voltage VCEO 20 V 0.45 0.1 0.45 0.11.27 1.27Emitter to ba
2sa836.pdf
2SA836Silicon PNP EpitaxialApplicationLow frequency low noise amplifierOutlineTO-92 (1)1. Emitter2. Collector3. Base3212SA836Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 55 VCollector to emitter voltage VCEO 55 VEmitter to base voltage VEBO 5 VCollector current IC 100 mAEmitter current IE 100 mAC
2sa839.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SA839 DESCRIPTION With TO-220 package Complement to type 2SC1669 High breakdown voltage APPLICATIONS Audio power amplifier applications Driver stage amplifier applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220) and symbol3 Base
2sa837.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SA837 DESCRIPTION With TO-3 package Wide area of safe operation Complement to type 2SC1667 APPLICATIONS For radio frequency and power amplifier applications PINNING(see Fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol3 CollectorAbsolute maximum ratings(Ta=) SYMBO
2sa839.pdf
isc Silicon PNP Power Transistor 2SA839DESCRIPTIONCollector-Emitter Breakdown Voltage: V = -150V(Min)(BR)CEODC Current Gain: h = 40-240@ I = -0.5AFE CComplement to Type 2SC1669Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSAudio power amplifier applications.Driver stage amplifier applications.ABSOLUTE MAXIMUM
2sa837.pdf
Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA837 DESCRIPTION With TO-3 package Wide area of safe operation Complement to type 2SC1667 APPLICATIONS For radio frequency and power amplifier applications PINNING(see Fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol3 CollectorAbsolute maximum rating
Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2N3906 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .
