2SA837 Todos los transistores

JMnic Product Specification Silicon PNP Power Transistors 2SA837 DESCRIPTION With TO-3 package Wide area of safe operation Complement to type 2SC1667 APPLICATIONS For radio frequency and power amplifier applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolute maximum ratings(Ta= ) SYMBO

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA837 DESCRIPTION With TO-3 package Wide area of safe operation Complement to type 2SC1667 APPLICATIONS For radio frequency and power amplifier applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolute maximum rating

2SB852K / 2SA830S Transistors Transistors 2SD1383K / 2SC1645S (96-118-B20) (96-205-D20) 280 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document a

2SB852K / 2SA830S Transistors Transistors 2SD1383K / 2SC1645S (96-118-B20) (96-205-D20) 280 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document a

Transistor 2SA838 Silicon PNP epitaxial planer type For high-frequency amplification Unit mm Complementary to 2SC1359 5.0 0.2 4.0 0.2 Features High transition frequency fT. Absolute Maximum Ratings (Ta=25 C) Parameter Symbol Ratings Unit Collector to base voltage VCBO 30 V +0.2 +0.2 Collector to emitter voltage VCEO 20 V 0.45 0.1 0.45 0.1 1.27 1.27 Emitter to ba

Transistor 2SA838 Silicon PNP epitaxial planer type For high-frequency amplification Unit mm Complementary to 2SC1359 5.0 0.2 4.0 0.2 Features High transition frequency fT. Absolute Maximum Ratings (Ta=25 C) Parameter Symbol Ratings Unit Collector to base voltage VCBO 30 V +0.2 +0.2 Collector to emitter voltage VCEO 20 V 0.45 0.1 0.45 0.1 1.27 1.27 Emitter to ba

2SA836 Silicon PNP Epitaxial Application Low frequency low noise amplifier Outline TO-92 (1) 1. Emitter 2. Collector 3. Base 3 2 1 2SA836 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 55 V Collector to emitter voltage VCEO 55 V Emitter to base voltage VEBO 5 V Collector current IC 100 mA Emitter current IE 100 mA C

JMnic Product Specification Silicon PNP Power Transistors 2SA839 DESCRIPTION With TO-220 package Complement to type 2SC1669 High breakdown voltage APPLICATIONS Audio power amplifier applications Driver stage amplifier applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220) and symbol 3 Base

isc Silicon PNP Power Transistor 2SA839 DESCRIPTION Collector-Emitter Breakdown Voltage V = -150V(Min) (BR)CEO DC Current Gain h = 40-240@ I = -0.5A FE C Complement to Type 2SC1669 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Audio power amplifier applications. Driver stage amplifier applications. ABSOLUTE MAXIMUM