2SA839 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

JMnic Product Specification Silicon PNP Power Transistors 2SA839 DESCRIPTION With TO-220 package Complement to type 2SC1669 High breakdown voltage APPLICATIONS Audio power amplifier applications Driver stage amplifier applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220) and symbol3 Base

isc Silicon PNP Power Transistor 2SA839DESCRIPTIONCollector-Emitter Breakdown Voltage: V = -150V(Min)(BR)CEODC Current Gain: h = 40-240@ I = -0.5AFE CComplement to Type 2SC1669Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSAudio power amplifier applications.Driver stage amplifier applications.ABSOLUTE MAXIMUM

2SB852K / 2SA830STransistorsTransistors2SD1383K / 2SC1645S(96-118-B20)(96-205-D20)280Appendix NotesNo technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD.The contents described herein are subject to change without notice. The specifications for theproduct described in this document a

2SB852K / 2SA830STransistorsTransistors2SD1383K / 2SC1645S(96-118-B20)(96-205-D20)280Appendix NotesNo technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD.The contents described herein are subject to change without notice. The specifications for theproduct described in this document a

Transistor2SA838Silicon PNP epitaxial planer typeFor high-frequency amplificationUnit: mmComplementary to 2SC13595.0 0.2 4.0 0.2FeaturesHigh transition frequency fT.Absolute Maximum Ratings (Ta=25C)Parameter Symbol Ratings UnitCollector to base voltage VCBO 30 V+0.2 +0.2Collector to emitter voltage VCEO 20 V 0.45 0.1 0.45 0.11.27 1.27Emitter to ba

Transistor2SA838Silicon PNP epitaxial planer typeFor high-frequency amplificationUnit: mmComplementary to 2SC13595.0 0.2 4.0 0.2FeaturesHigh transition frequency fT.Absolute Maximum Ratings (Ta=25C)Parameter Symbol Ratings UnitCollector to base voltage VCBO 30 V+0.2 +0.2Collector to emitter voltage VCEO 20 V 0.45 0.1 0.45 0.11.27 1.27Emitter to ba

2SA836Silicon PNP EpitaxialApplicationLow frequency low noise amplifierOutlineTO-92 (1)1. Emitter2. Collector3. Base3212SA836Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 55 VCollector to emitter voltage VCEO 55 VEmitter to base voltage VEBO 5 VCollector current IC 100 mAEmitter current IE 100 mAC

JMnic Product Specification Silicon PNP Power Transistors 2SA837 DESCRIPTION With TO-3 package Wide area of safe operation Complement to type 2SC1667 APPLICATIONS For radio frequency and power amplifier applications PINNING(see Fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol3 CollectorAbsolute maximum ratings(Ta=) SYMBO

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA837 DESCRIPTION With TO-3 package Wide area of safe operation Complement to type 2SC1667 APPLICATIONS For radio frequency and power amplifier applications PINNING(see Fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol3 CollectorAbsolute maximum rating