2SA843 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SA843
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 20 W
Tensión colector-base (Vcb): 200 V
Tensión colector-emisor (Vce): 150 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 0.5 A
Temperatura operativa máxima (Tj): 175 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 35 MHz
Ganancia de corriente contínua (hfe): 60
Paquete / Cubierta: TO220
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2SA843 Datasheet (PDF)
2sa843.pdf
isc Silicon PNP Power Transistor 2SA843DESCRIPTIONCollector-Emitter Breakdown Voltage: V = -150V(Min)(BR)CEODC Current Gain: h = 60-200@ I = -0.4AFE CComplement to Type 2SC1683Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSAudio frequency power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL P
2sa844.pdf
2SA844Silicon PNP EpitaxialApplicationLow frequency amplifierOutlineTO-92 (1)1. Emitter2. Collector3. Base3212SA844Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 55 VCollector to emitter voltage VCEO 55 VEmitter to base voltage VEBO 5 VCollector current IC 100 mAEmitter current IE 100 mACollector p
2sa844.pdf
2SA844 -0.1A , -55V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free TO-92 FEATURES High DC Current Gain G H Low Frequency Amplifier EmitterCollectorBase JCLASSIFICATION OF hFE A DMillimeter REF. Min. Max.Product-Rank 2SA844-C 2SA844-D 2SA844-EA 4.40 4
Otros transistores... 2SA1179M4 , 2SA1179M5 , 2SA1179M6 , 2SA1179M7 , 2SA118 , 2SA1180 , 2SA1180A , 2SA1182 , 2N3055 , 2SA1182Y , 2SA1183 , 2SA1184 , 2SA1185 , 2SA1186 , 2SA1186O , 2SA1186P , 2SA1186Y .
Liste
Recientemente añadidas las descripciónes de los transistores:
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