2SA843 Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SA843

Material: Si

Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 20 W

Tensión colector-base (Vcb): 200 V

Tensión colector-emisor (Vce): 150 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 0.5 A

Temperatura operativa máxima (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 35 MHz

Ganancia de corriente contínua (hFE): 60

Encapsulados: TO220

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2SA843 datasheet

 ..1. Size:204K  inchange semiconductor
 2sa843.pdf pdf_icon

2SA843

isc Silicon PNP Power Transistor 2SA843 DESCRIPTION Collector-Emitter Breakdown Voltage V = -150V(Min) (BR)CEO DC Current Gain h = 60-200@ I = -0.4A FE C Complement to Type 2SC1683 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Audio frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL P

 9.1. Size:23K  hitachi
 2sa844.pdf pdf_icon

2SA843

2SA844 Silicon PNP Epitaxial Application Low frequency amplifier Outline TO-92 (1) 1. Emitter 2. Collector 3. Base 3 2 1 2SA844 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 55 V Collector to emitter voltage VCEO 55 V Emitter to base voltage VEBO 5 V Collector current IC 100 mA Emitter current IE 100 mA Collector p

 9.2. Size:77K  secos
 2sa844.pdf pdf_icon

2SA843

2SA844 -0.1A , -55V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free TO-92 FEATURES High DC Current Gain G H Low Frequency Amplifier Emitter Collector Base J CLASSIFICATION OF hFE A D Millimeter REF. Min. Max. Product-Rank 2SA844-C 2SA844-D 2SA844-E A 4.40 4

Otros transistores... 2SA836, 2SA837, 2SA838, 2SA839, 2SA84, 2SA840, 2SA841, 2SA842, S8550, 2SA844, 2SA844C, 2SA844D, 2SA844E, 2SA844F, 2SA845, 2SA845A, 2SA845AH