2SA843 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SA843
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 20 W
Maximum Collector-Base Voltage |Vcb|: 200 V
Maximum Collector-Emitter Voltage |Vce|: 150 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.5 A
Max. Operating Junction Temperature (Tj): 175 °C
Transition Frequency (ft): 35 MHz
Forward Current Transfer Ratio (hFE), MIN: 60
Noise Figure, dB: -
Package: TO220
2SA843 Transistor Equivalent Substitute - Cross-Reference Search
2SA843 Datasheet (PDF)
2sa843.pdf
isc Silicon PNP Power Transistor 2SA843DESCRIPTIONCollector-Emitter Breakdown Voltage: V = -150V(Min)(BR)CEODC Current Gain: h = 60-200@ I = -0.4AFE CComplement to Type 2SC1683Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSAudio frequency power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL P
2sa844.pdf
2SA844Silicon PNP EpitaxialApplicationLow frequency amplifierOutlineTO-92 (1)1. Emitter2. Collector3. Base3212SA844Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 55 VCollector to emitter voltage VCEO 55 VEmitter to base voltage VEBO 5 VCollector current IC 100 mAEmitter current IE 100 mACollector p
2sa844.pdf
2SA844 -0.1A , -55V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free TO-92 FEATURES High DC Current Gain G H Low Frequency Amplifier EmitterCollectorBase JCLASSIFICATION OF hFE A DMillimeter REF. Min. Max.Product-Rank 2SA844-C 2SA844-D 2SA844-EA 4.40 4
Datasheet: 2SA1801 , 2SA1802 , 2SA1802A , 2SA1803 , 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , BD777 , 2SA1805 , 2SA1805O , 2SA1805R , 2SA1806 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C .
