2SA876HB Todos los transistores

2SA872, 2SA872A Silicon PNP Epitaxial Application Low frequency low noise amplifier Complementary pair with 2SC1775/A Outline TO-92 (1) 1. Emitter 2. Collector 3. Base 3 2 1 2SA872, 2SA872A Absolute Maximum Ratings (Ta = 25 C) Item Symbol 2SA872 2SA872A Unit Collector to base voltage VCBO 90 120 V Collector to emitter voltage VCEO 90 120 V Emitter to base

JMnic Product Specification Silicon PNP Power Transistors 2SA877 2SA878 DESCRIPTION With TO-3 package High power dissipation APPLICATIONS Power amplifier applications Recommended for high-power high-fidelity audio frequency amplifier output stage PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolute

isc Silicon PNP Power Transistor 2SA877 DESCRIPTION High Power Dissipation- P = 100W(Max.)@T =25 C C Collector-Emitter Breakdown Voltage- V = -80V(Min.) (BR)CEO Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplifier and general purpose applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PAR

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA877 2SA878 DESCRIPTION With TO-3 package High power dissipation APPLICATIONS Power amplifier applications Recommended for high-power high-fidelity audio frequency amplifier output stage PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Co