2SA876HB Datasheet. Equivalente

 9.1. Size:295K  1
 2sa874m 2sa1548.pdf

 9.2. Size:296K  1
 2sa874 2sa1559.pdf

 9.3. Size:49K  panasonic
 2sa879 e.pdf

 9.4. Size:37K  hitachi
 2sa872.pdf

2SA872, 2SA872A Silicon PNP Epitaxial Application Low frequency low noise amplifier Complementary pair with 2SC1775/A Outline TO-92 (1) 1. Emitter 2. Collector 3. Base 3 2 1 2SA872, 2SA872A Absolute Maximum Ratings (Ta = 25 C) Item Symbol 2SA872 2SA872A Unit Collector to base voltage VCBO 90 120 V Collector to emitter voltage VCEO 90 120 V Emitter to base

 9.5. Size:148K  jmnic
 2sa877 2sa878.pdf

JMnic Product Specification Silicon PNP Power Transistors 2SA877 2SA878 DESCRIPTION With TO-3 package High power dissipation APPLICATIONS Power amplifier applications Recommended for high-power high-fidelity audio frequency amplifier output stage PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolute

 9.6. Size:193K  inchange semiconductor
 2sa877.pdf

isc Silicon PNP Power Transistor 2SA877 DESCRIPTION High Power Dissipation- P = 100W(Max.)@T =25 C C Collector-Emitter Breakdown Voltage- V = -80V(Min.) (BR)CEO Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplifier and general purpose applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PAR

 9.7. Size:190K  inchange semiconductor
 2sa877 2sa878.pdf

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA877 2SA878 DESCRIPTION With TO-3 package High power dissipation APPLICATIONS Power amplifier applications Recommended for high-power high-fidelity audio frequency amplifier output stage PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Co