2SA877 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

JMnic Product Specification Silicon PNP Power Transistors 2SA877 2SA878 DESCRIPTION With TO-3 package High power dissipation APPLICATIONS Power amplifier applications Recommended for high-power high-fidelity audio frequency amplifier output stage PINNING(see Fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol3 CollectorAbsolute

isc Silicon PNP Power Transistor 2SA877DESCRIPTIONHigh Power Dissipation-: P = 100W(Max.)@T =25C CCollector-Emitter Breakdown Voltage-: V = -80V(Min.)(BR)CEOMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplifier and general purposeapplications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PAR

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA877 2SA878 DESCRIPTION With TO-3 package High power dissipation APPLICATIONS Power amplifier applications Recommended for high-power high-fidelity audio frequency amplifier output stage PINNING(see Fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol3 Co

Transistor2SA879Silicon PNP epitaxial planer typeFor general amplificationUnit: mmComplementary to 2SC15735.9 0.2 4.9 0.2FeaturesHigh collector to emitter voltage VCEO.0.7 0.1Absolute Maximum Ratings (Ta=25C)2.54 0.15Parameter Symbol Ratings UnitCollector to base voltage VCBO 250 VCollector to emitter voltage VCEO 200 VEmitter to base voltage VEBO

2SA872, 2SA872ASilicon PNP EpitaxialApplication Low frequency low noise amplifier Complementary pair with 2SC1775/AOutlineTO-92 (1)1. Emitter2. Collector3. Base3212SA872, 2SA872AAbsolute Maximum Ratings (Ta = 25C)Item Symbol 2SA872 2SA872A UnitCollector to base voltage VCBO 90 120 VCollector to emitter voltage VCEO 90 120 VEmitter to base