2SA877 Specs and Replacement
Type Designator: 2SA877
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 100 W
Maximum Collector-Base Voltage |Vcb|: 80 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 10 A
Max. Operating Junction Temperature (Tj): 125 °C
Electrical Characteristics
Transition Frequency (ft): 15 MHz
Collector Capacitance (Cc): 255 pF
Forward Current Transfer Ratio (hFE), MIN: 60
Package: TO3
2SA877 Substitution
- BJT ⓘ Cross-Reference Search
2SA877 datasheet
JMnic Product Specification Silicon PNP Power Transistors 2SA877 2SA878 DESCRIPTION With TO-3 package High power dissipation APPLICATIONS Power amplifier applications Recommended for high-power high-fidelity audio frequency amplifier output stage PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolute... See More ⇒
isc Silicon PNP Power Transistor 2SA877 DESCRIPTION High Power Dissipation- P = 100W(Max.)@T =25 C C Collector-Emitter Breakdown Voltage- V = -80V(Min.) (BR)CEO Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplifier and general purpose applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PAR... See More ⇒
Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA877 2SA878 DESCRIPTION With TO-3 package High power dissipation APPLICATIONS Power amplifier applications Recommended for high-power high-fidelity audio frequency amplifier output stage PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Co... See More ⇒
Detailed specifications: 2SA873 , 2SA874 , 2SA874M , 2SA876 , 2SA876H , 2SA876HA , 2SA876HB , 2SA876HC , 431 , 2SA878 , 2SA879 , 2SA88 , 2SA880 , 2SA881 , 2SA882 , 2SA883 , 2SA884 .
History: 2SC2879
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