2SA882 Todos los transistores

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2SA882 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SA882

Material: Si

Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 100 W

Tensión colector-base (Vcb): 130 V

Tensión colector-emisor (Vce): 130 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 7 A

Temperatura operativa máxima (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS

Producto de corriente -- ganancia — ancho de banda (ft): 7 MHz

Capacitancia de salida (Cc): 800 pF

Ganancia de corriente contínua (hfe): 40

Empaquetado / Estuche: TO3

Búsqueda de reemplazo de transistor bipolar 2SA882

 

2SA882 Datasheet (PDF)

1.1. 2sa882.pdf Size:97K _jmnic

2SA882
2SA882

Product Specification www.jmnic.com Silicon PNP Power Transistors 2SA882 DESCRIPTION ·With TO-3 package ·Excellent Safe Operating Area APPLICATIONS ·For power and switching applications PINNING PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta=?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base

1.2. 2sa882.pdf Size:151K _inchange_semiconductor

2SA882
2SA882

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA882 DESCRIPTION ·With TO-3 package ·Excellent Safe Operating Area APPLICATIONS ·For power and switching applications PINNING PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolute maximum ratings(Ta=?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collec

5.1. 2sa885 3ca885.pdf Size:174K _update

2SA882
2SA882

2SA885(3CA885) 硅 PNP 半导体三极管/SILICON PNP TRANSISTOR 用途:用于中功率放大。 Purpose: Medium power amplifier. 特点:V 低,与 2SC1846(3DA1846)互补可得到 3W 输出。 CE(sat) Features: Low V ,output of 3W can be obtained by a complementary pair with 2SC1846(3DA1846). CE(sat) 极限参数/Absolute maximum ratings(Ta=25℃) 参数符号 数值 单位 Symbo

5.2. 2sa886.pdf Size:94K _panasonic

2SA882
2SA882

Power Transistors 2SA0886 (2SA886) Silicon PNP epitaxial planar type For low-frequency power amplification Unit: mm 8.0+0.5 0.1 3.20.2 Complementary to 2SC1847 ? 3.160.1 Features Output of 4 W can be obtained by a complementary pair with 2SC1847 TO-126B package which requires no insulation plate for installa- tion to the heat sink Absolute Maximum Ratings Ta = 25C Param

5.3. 2sa885.pdf Size:63K _panasonic

2SA882
2SA882

Power Transistors 2SA0885 (2SA885) 2SA0885 (2SA885) 2SA0885 (2SA885) 2SA0885 (2SA885) 2SA0885 (2SA885) Silicon PNP epitaxial planar type Unit: mm For low-frequency power amplification 8.0+0.5 0.1 3.20.2 Complementary to 2SC1846 ? 3.160.1 Features Output of 3 W can be obtained by a complementary pair with 2SC1846 TO-126B package which requires no insulation plate for instal

5.4. 2sa880.pdf Size:128K _panasonic

2SA882
2SA882

5.5. 2sa887.pdf Size:121K _panasonic

2SA882
2SA882

5.6. 2sa883.pdf Size:50K _no

2SA882

5.7. 2sa886.pdf Size:193K _jmnic

2SA882
2SA882

JMnic Product Specification Silicon PNP Power Transistors 2SA886 DESCRIPTION · ·With TO-126 package ·Complement to type 2SC1847 ·Low collector-emitter saturation voltage APPLICATIONS ·For low-frequency power amplification PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Base Absolute Maximun Ratings (Ta=25?) SYMBOL PARAMETER CONDITIONS VA

5.8. 2sa885.pdf Size:201K _jmnic

2SA882
2SA882

JMnic Product Specification Silicon PNP Power Transistors 2SA885 DESCRIPTION · ·With TO-126 package ·Complement to type 2SC1846 ·Low collector-emitter saturation voltage APPLICATIONS ·For low-frequency power amplification PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Base Absolute Maximun Ratings (Ta=25?) SYMBOL PARAMETER CONDITIONS VA

5.9. 2sa887.pdf Size:169K _jmnic

2SA882
2SA882

JMnic Product Specification Silicon PNP Power Transistors 2SA887 DESCRIPTION ·With TO-202 package ·Complement to type 2SC1848 APPLICATIONS ·Medium power amplifier PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-202) and symbol 3 Emitter Absolute maximum ratings (Ta=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage

5.10. 2sa886.pdf Size:222K _inchange_semiconductor

2SA882
2SA882

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA886 DESCRIPTION · ·With TO-126 package ·Complement to type 2SC1847 ·Low collector-emitter saturation voltage APPLICATIONS ·For low-frequency power amplification PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Base Absolute Maximun Ratings (Ta=25?) SYMBOL PARAME

5.11. 2sa885.pdf Size:229K _inchange_semiconductor

2SA882
2SA882

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA885 DESCRIPTION · ·With TO-126 package ·Complement to type 2SC1846 ·Low collector-emitter saturation voltage APPLICATIONS ·For low-frequency power amplification PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Base Absolute Maximun Ratings (Ta=25?) SYMBOL PARAME

5.12. 2sa887.pdf Size:183K _inchange_semiconductor

2SA882
2SA882

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA887 DESCRIPTION ·With TO-202 package ·Complement to type 2SC1848 APPLICATIONS ·Medium power amplifier PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-202) and symbol 3 Emitter Absolute maximum ratings (Ta=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Colle

Otros transistores... 2SA876HB , 2SA876HC , 2SA877 , 2SA878 , 2SA879 , 2SA88 , 2SA880 , 2SA881 , TIP42C , 2SA883 , 2SA884 , 2SA885 , 2SA886 , 2SA887 , 2SA888 , 2SA889 , 2SA89 .

 


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