2SA911
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SA911
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.47
W
Tensión colector-base (Vcb): 850
V
Tensión colector-emisor (Vce): 850
V
Tensión emisor-base (Veb): 12
V
Corriente del colector DC máxima (Ic): 0.1
A
Temperatura operativa máxima (Tj): 125
°C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 9
MHz
Capacitancia de salida (Cc): 16
pF
Ganancia de corriente contínua (hfe): 30
Paquete / Cubierta:
TO5
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2SA911
Datasheet (PDF)
9.5. Size:105K jmnic
2sa914.pdf 
Product Specification www.jmnic.com Silicon PNP Power Transistors 2SA914 DESCRIPTION With TO-126 package Complement to type 2SC1953 Good linearity of hFE High VCEO APPLICATIONS For audio frequency power pre-amplifier PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base 3 BaseAbsolute Maximun Ratings (Ta=25) SYMBOL PARAMETER CON
9.6. Size:125K jmnic
2sa913 2sa913a.pdf
Product Specification www.jmnic.com Silicon PNP Power Transistors 2SA913 2SA913A DESCRIPTION With TO-220 package Complement to type 2SC1913/1913A Large collector power dissipation High VCEO APPLICATIONS Audio frequency high power driver PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base 3 BaseFig.1 simplified outline (TO-220) and sy
9.7. Size:177K inchange semiconductor
2sa914.pdf
Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA914 DESCRIPTION With TO-126 package Complement to type 2SC1953 Good linearity of hFE High VCEOAPPLICATIONS For audio frequency power pre-amplifier PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base 3 BaseAbsolute Maximun Ratings (Ta=25) SYMBOL PARAM
9.8. Size:205K inchange semiconductor
2sa913.pdf
isc Silicon PNP Power Transistor 2SA913DESCRIPTIONCollector-Emitter Breakdown Voltage: V = -150V(Min)(BR)CEOComplement to Type 2SC1913Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for AF high power dirver applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage -1
9.9. Size:139K inchange semiconductor
2sa913 2sa913a.pdf
Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA913 2SA913A DESCRIPTION With TO-220 package Complement to type 2SC1913/1913A Large collector power dissipation High VCEO APPLICATIONS Audio frequency high power driver PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220) and s
Otros transistores... 2N3192
, 2N3193
, 2N3194
, 2N3195
, 2N3196
, 2N3197
, 2N3198
, 2N3199
, 2SC4793
, 2N320
, 2N3200
, 2N3201
, 2N3202
, 2N3203
, 2N3204
, 2N3205
, 2N3206
.
History: BF252
