2SA911 Datasheet and Replacement

   Type Designator: 2SA911
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 0.47 W
   Maximum Collector-Base Voltage |Vcb|: 850 V
   Maximum Collector-Emitter Voltage |Vce|: 850 V
   Maximum Emitter-Base Voltage |Veb|: 12 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 125 °C
   Transition Frequency (ft): 9 MHz
   Collector Capacitance (Cc): 16 pF
   Forward Current Transfer Ratio (hFE), MIN: 30
   Noise Figure, dB: -
   Package: TO5

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2SA911 Datasheet (PDF)

9.1. Size:168K nec
2sa916.pdf pdf_icon

9.2. Size:170K nec
2sa915.pdf pdf_icon

9.3. Size:111K panasonic
2sa913.pdf pdf_icon

9.4. Size:78K panasonic
2sa914 2sc1953 2sa914.pdf pdf_icon

9.5. Size:105K jmnic
2sa914.pdf pdf_icon

Product Specification www.jmnic.com Silicon PNP Power Transistors 2SA914 DESCRIPTION With TO-126 package Complement to type 2SC1953 Good linearity of hFE High VCEO APPLICATIONS For audio frequency power pre-amplifier PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base 3 BaseAbsolute Maximun Ratings (Ta=25) SYMBOL PARAMETER CON

9.6. Size:125K jmnic
2sa913 2sa913a.pdf pdf_icon

Product Specification www.jmnic.com Silicon PNP Power Transistors 2SA913 2SA913A DESCRIPTION With TO-220 package Complement to type 2SC1913/1913A Large collector power dissipation High VCEO APPLICATIONS Audio frequency high power driver PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base 3 BaseFig.1 simplified outline (TO-220) and sy

9.7. Size:177K inchange semiconductor
2sa914.pdf pdf_icon

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA914 DESCRIPTION With TO-126 package Complement to type 2SC1953 Good linearity of hFE High VCEOAPPLICATIONS For audio frequency power pre-amplifier PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base 3 BaseAbsolute Maximun Ratings (Ta=25) SYMBOL PARAM

9.8. Size:205K inchange semiconductor
2sa913.pdf pdf_icon

isc Silicon PNP Power Transistor 2SA913DESCRIPTIONCollector-Emitter Breakdown Voltage: V = -150V(Min)(BR)CEOComplement to Type 2SC1913Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for AF high power dirver applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage -1

9.9. Size:139K inchange semiconductor
2sa913 2sa913a.pdf pdf_icon

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA913 2SA913A DESCRIPTION With TO-220 package Complement to type 2SC1913/1913A Large collector power dissipation High VCEO APPLICATIONS Audio frequency high power driver PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220) and s

Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , TIP31 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .