2SA93 Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SA93
Material: Ge
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.055 W
Tensión colector-base (Vcb): 18 V
Corriente del colector DC máxima (Ic): 0.005 A
Temperatura operativa máxima (Tj): 75 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 20 MHz
Capacitancia de salida (Cc): 3 pF
Ganancia de corriente contínua (hFE): 50
Encapsulados: TO44
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2SA93 datasheet
0.1. Size:124K 1
2sa937.pdf 
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0.4. Size:125K 1
2sa937m.pdf
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0.5. Size:100K rohm
2sa1037ak 2sa1576a 2sa1774 2sa933as.pdf
Transistors General Purpose Transistor (*50V, *0.15A) 2SA1037AK / 2SA1576A / 2SA1774 / 2SA933AS FFeatures FExternal dimensions (Units mm) 1) Excellent hFE linearity. 2) Complements the 2SC2412K / 2SC4081 / 2SC4617 / 2SC1740S. FStructure Epitaxial planar type PNP silicon transistor (96-89-A32) 198 Transistors 2SA1037AK/2SA1576A/2SA1774/2SA933AS FAbsolute maximum ratings (Ta = 25_
0.6. Size:168K rohm
2sa1037ak 2sa1576a 2sa1774 2sa2029 2sa933as.pdf
General Purpose Transistor ( 50V, 0.15A) 2SA1037AK / 2SA1576A / 2SA1774 / 2SA2029 / 2SA933AS Features Dimensions (Unit mm) 1) Excellent hFE linearity. 2SA1037AK 2SA1576A 2) Complements the 2SC2412K / 2SC4081 / 2SC4617 / 2SC5658 / 2SC1740S. 1.25 1.6 2.1 Structure 2.8 Epitaxial planar type. PNP silicon transistor 0.1 to 0.4 0.3 to 0.6 Each lead has same dime
0.7. Size:555K jiangsu
2sa933as.pdf
JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-92S Plastic-Encapsulate Transistors TO-92S 2SA933AS TRANSISTOR (PNP) 1. EMITTER FEATURES 2. COLLECTOR Excellent hFE Linearity 3. BASE Equivalent Circuit A933AS A933AS=Device code Solid dot = Green molding compound device, if none, the normal device XXX=Code ORDERING INFORMATION Part Number Packa
0.8. Size:116K transys
2sa935.pdf
Transys Electronics L I M I T E D TO-92L Plastic-Encapsulated Transistors TO-92L 2SA935 TRANSISTOR (PNP) 1. EMITTER FEATURES Power dissipation 2. COLLECTOR PCM 0.75 W (Tamb=25 ) 3. BASE Collector current ICM -0.7 A Collector-base voltage V(BR)CBO -80 V 1 2 3 Operating and storage junction temperature range TJ, Tstg -55 to +150 ELECTR
0.9. Size:171K lge
2sa933as.pdf
2SA933AS TO-92S Transistor (PNP) 1. EMITTER TO-92S 2. COLLECTOR 1 2 3 3. BASE Features Excellent hFE linearity MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -6 V IC Collector Current -150 mA PC Collector Power dissipation 300
0.10. Size:487K blue-rocket-elect
2sa933a.pdf
2SA933A(BR3CG933AK) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-92 PNP Silicon PNP transistor in a TO-92 Plastic Package. / Features 2SC1740(BR3DG1740K) Excellent hFE linearity, complementary pair with 2SC1740(BR3DG1740K). / Applications General purpose applications.
0.11. Size:118K wej
2sa933as.pdf
RoHS 2SA933AS 2SA933AS TRANSISTOR (PNP) TO-92S 1. EMITTER FEATURES 2. COLLECTOR Power dissipation 3. BASE PCM 0.2 W (Tamb=25 ) Collector current 123 I CM -0.15 A Collector-base voltage V(BR)CBO -60 V Operating and storage junction temperature range TJ, Tstg -55 to +150 ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specif
Otros transistores... 2SA925-1
, 2SA925-2
, 2SA927
, 2SA928
, 2SA929
, 2SA929F
, 2SA929G
, 2SA929H
, D880
, 2SA930
, 2SA930F
, 2SA930G
, 2SA930H
, 2SA931
, 2SA932
, 2SA933
, 2SA933LN
.
History: MP3612
| 2SB1556
