Биполярный транзистор 2SA93
Даташит. Аналоги
Наименование производителя: 2SA93
Тип материала: Ge
Полярность: PNP
Максимальная рассеиваемая мощность (Pc): 0.055
W
Макcимально допустимое напряжение коллектор-база (Ucb): 18
V
Макcимальный постоянный ток коллектора (Ic): 0.005
A
Предельная температура PN-перехода (Tj): 75
°C
Граничная частота коэффициента передачи тока (ft): 20
MHz
Ёмкость коллекторного перехода (Cc): 3
pf
Статический коэффициент передачи тока (hfe): 50
Корпус транзистора:
TO44
- подбор биполярного транзистора по параметрам
2SA93
Datasheet (PDF)
0.1. Size:124K 1
2sa937.pdf 

This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer
0.4. Size:125K 1
2sa937m.pdf 

This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer
0.5. Size:100K rohm
2sa1037ak 2sa1576a 2sa1774 2sa933as.pdf 

TransistorsGeneral Purpose Transistor(*50V, *0.15A)2SA1037AK / 2SA1576A / 2SA1774 / 2SA933ASFFeatures FExternal dimensions (Units: mm)1) Excellent hFE linearity.2) Complements the 2SC2412K /2SC4081 / 2SC4617 / 2SC1740S.FStructureEpitaxial planar typePNP silicon transistor(96-89-A32)198Transistors 2SA1037AK/2SA1576A/2SA1774/2SA933ASFAbsolute maximum ratings (Ta = 25_
0.6. Size:168K rohm
2sa1037ak 2sa1576a 2sa1774 2sa2029 2sa933as.pdf 

General Purpose Transistor (50V, 0.15A) 2SA1037AK / 2SA1576A / 2SA1774 / 2SA2029 / 2SA933AS Features Dimensions (Unit : mm) 1) Excellent hFE linearity. 2SA1037AK 2SA1576A2) Complements the 2SC2412K / 2SC4081 / 2SC4617 / 2SC5658 / 2SC1740S. 1.251.62.1Structure 2.8Epitaxial planar type. PNP silicon transistor 0.1 to 0.40.3 to 0.6Each lead has same dime
0.7. Size:555K jiangsu
2sa933as.pdf 

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-92S Plastic-Encapsulate Transistors TO-92S 2SA933AS TRANSISTOR (PNP)1. EMITTER FEATURES 2. COLLECTORExcellent hFE Linearity3. BASE Equivalent Circuit A933ASA933AS=Device code Solid dot = Green molding compound device, if none, the normal device XXX=Code ORDERING INFORMATION Part Number Packa
0.8. Size:116K transys
2sa935.pdf 

Transys ElectronicsL I M I T E D TO-92L Plastic-Encapsulated TransistorsTO-92L 2SA935 TRANSISTOR (PNP) 1. EMITTER FEATURES Power dissipation 2. COLLECTOR PCM : 0.75 W (Tamb=25) 3. BASE Collector current ICM : -0.7 A Collector-base voltage V(BR)CBO : -80 V 1 2 3 Operating and storage junction temperature range TJ, Tstg: -55 to +150 ELECTR
0.9. Size:171K lge
2sa933as.pdf 

2SA933AS TO-92S Transistor (PNP) 1. EMITTER TO-92S 2. COLLECTOR 1 2 3 3. BASE Features Excellent hFE linearity MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol ParameterValue UnitsVCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -6 V IC Collector Current -150 mA PC Collector Power dissipation 300
0.10. Size:487K blue-rocket-elect
2sa933a.pdf 

2SA933A(BR3CG933AK) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-92 PNP Silicon PNP transistor in a TO-92 Plastic Package. / Features 2SC1740(BR3DG1740K) Excellent hFE linearity, complementary pair with 2SC1740(BR3DG1740K). / Applications General purpose applications.
0.11. Size:118K wej
2sa933as.pdf 

RoHS 2SA933AS 2SA933AS TRANSISTOR (PNP) TO-92S 1. EMITTER FEATURES 2. COLLECTOR Power dissipation 3. BASE PCM : 0.2 W (Tamb=25) Collector current 123 I CM : -0.15 A Collector-base voltage V(BR)CBO : -60 V Operating and storage junction temperature range TJ, Tstg: -55 to +150 ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specif
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History: 2N33
| 2N2127
| 2SA557
| 2SA808
| 2SC6096-TD-E
| 2SC2694
| ECG2305